onsemi BUV22G

Overview

BUV22G from onsemi is an NPN silicon power transistor in TO-204 (TO-3) metal package, rated for 250 V_CEO(SUS), 40 A continuous collector current, and 250 W total dissipation at T_C = 25°C. It delivers low V_CE(sat) of 1.0 V at I_C = 10 A and fast switching with t_f = 0.35 µs at I_C = 20 A, designed for high-power switch-mode applications including horizontal deflection in CRT displays.

For engineers reviewing the BUV22G datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, thermal resistance (R_θJC = 0.7°C/W), safe operating area limits, second breakdown behavior, and Pb-free compliance per onsemi's Soldering and Mounting Techniques Reference Manual.

Technical Context

The BUV22G operates as a high-speed, high-current NPN power switch optimized for inductive load switching in switch-mode power supplies and CRT horizontal output stages. Its design emphasizes robust second-breakdown immunity (I_S/b = 12 A at V_CE = 20 V, t = 1 s) and stable DC current gain (h_FE ≥ 20 at I_C = 10 A, V_CE = 4 V).

Thermal management is critical: R_θJC = 0.7°C/W enables high-power operation only with effective heatsinking, and derating begins above 25°C case temperature. The device exhibits f_T = 8.0 MHz at V_CE = 15 V, I_C = 2 A, confirming RF-capable switching performance within its safe operating area.

Key Specifications

Pinout & Package

BUV22G uses the TO-204 (TO-3) metal package (Case 197A), with collector connected to the case for direct heatsinking. Two pin configurations are documented: Style 1 (Pin 1 = Base, Pin 2 = Emitter) and Style 2 (Pin 1 = Emitter, Pin 2 = Base); both share collector-as-case construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with BUV22G, BUV24G offers higher voltage headroom at the cost of reduced DC gain, while MJE13009 trades package robustness and thermal performance for surface-mount compatibility-neither is pin-compatible, and both require layout or drive redesign.

Availability

BUV22G is available at Aetrix Electronics and suitable for horizontal deflection circuits, high-power switch-mode power supplies, induction heating inverters, and industrial motor drive half-bridges requiring stable component supply and legacy-design continuity.

Supply support for BUV22G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The BUV22G belongs to onsemi's Switch-mode Series of high-voltage NPN power transistors, engineered specifically for reliability-critical horizontal deflection and high-current switching applications in legacy display and power conversion systems.

FAQ

What is the maximum safe operating voltage for BUV22G in inductive switching?

The BUV22G has a collector-emitter sustaining voltage (V_CEO(SUS)) of 250 Vdc, tested at I_C = 200 mA with I_B = 0 and L = 25 mH. This is the absolute maximum voltage it can sustain during inductive turn-off without breakdown. Exceeding 250 V risks second breakdown or avalanche failure, so designs must include snubbers or clamping to limit flyback voltage below this rating. The BUV22G datasheet confirms this value under OFF CHARACTERISTICS.

Does BUV22G require a heatsink, and what thermal resistance is needed?

Yes, the BUV22G absolutely requires a heatsink due to its 250 W power dissipation rating at T_C = 25°C and R_θJC = 0.7°C/W. To maintain T_J ≤ 150°C at full 250 W, the total thermal resistance (R_θJA) must be ≤ 0.5°C/W - meaning the heatsink plus interface resistance must be ≤ 0.5 − 0.7 = negative, which is impossible; thus, forced cooling or derating is mandatory. Practical use at >100 W demands active cooling or strict derating per Figure 1 in the BUV22G datasheet.

Is BUV22G pin-compatible with older BUV22 variants?

Yes, BUV22G shares identical TO-204 (TO-3) mechanical dimensions and pinout configurations (Style 1 and Style 2) with the legacy BUV22. The "G" suffix denotes Pb-free construction only; all electrical specifications, thermal characteristics, and terminal assignments remain unchanged. No PCB layout modification is required when upgrading from BUV22 to BUV22G, per onsemi's ordering information table.

What is the base drive requirement to fully saturate BUV22G at 10 A collector current?

To achieve V_CE(sat) ≤ 1.0 V at I_C = 10 A, the BUV22G requires I_B = 1 A, as specified in the ON CHARACTERISTICS table. This corresponds to a forced beta (I_C/I_B) of 10, well below its minimum h_FE of 20 - ensuring deep saturation and minimizing conduction loss. Driving with less than 1 A risks elevated V_CE(sat) and thermal instability, especially at elevated temperatures.

Why is BUV22G marked as discontinued, and is it still supported?

onsemi lists BUV22G as "DISCONTINUED (Note 1)" in its datasheet, indicating it is not recommended for new designs. However, it remains available through authorized distributors and Aetrix Electronics for legacy system repair, maintenance, and production continuity. onsemi continues to provide datasheets, application notes, and technical support, and the device is actively stocked with traceable Pb-free compliance per the BUV22G marking diagram and packaging data.