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Vishay General Semiconductor - Diodes Division BYG20GHE3_A/H

Part No.:
BYG20GHE3_A/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Single Diodes
Package:
DO-214AC, SMA
Datasheet:
AetrixBYG20GHE3_A/H.pdf
Description:
DIODE AVAL 400V 1.5A DO214AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:16,990

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Product details

Overview

BYG20GHE3_A/H from Vishay General Semiconductor is an ultrafast avalanche SMD rectifier diode in SMA (DO-214AC) package, rated for 400 V repetitive peak reverse voltage (VRRM), 1.5 A average forward current (IF(AV)), and 75 ns reverse recovery time (trr). It serves as a freewheeling or high-frequency output rectifier in automotive DC/DC converters and telecom power supplies.

For engineers reviewing the BYG20GHE3_A/H datasheet, BYG20GHE3_A/H pinout, BYG20GHE3_A/H application, or BYG20GHE3_A/H equivalent, key selection criteria include its AEC-Q101 qualification, soft recovery characteristics, low 1.4 V forward voltage at 1.5 A, 20 mJ avalanche energy rating, and MSL Level 1 moisture sensitivity.

Technical Context

This device is a single-die, planar-passivated silicon junction diode optimized for fast switching with controlled soft recovery to minimize EMI in high-frequency power conversion. Its glass-passivated pellet chip junction ensures stable leakage performance up to 100 °C (IR = 10 µA).

The BYG20GHE3_A/H operates with a maximum junction temperature of 150 °C and exhibits a typical thermal resistance of 25 °C/W (junction-to-lead) and 100–150 °C/W (junction-to-ambient), depending on PCB copper area. It is rated for 30 A non-repetitive surge current (IFSM) under 10 ms half-sine conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM400 V - Maximum repetitive reverse blocking voltage; defines safe operating range in boost/flyback clamp circuits.
IF(AV)1.5 A - Continuous DC forward current rating at 75 °C case temperature; determines heatsink-free operation limit.
trr75 ns - Measured at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A; enables >100 kHz switching in SMPS without excessive switching loss.
VF @ 1.5 A1.4 V - Forward voltage drop at rated average current; directly impacts conduction loss and thermal design.
IR @ 25 °C1.0 µA - Maximum DC reverse leakage at full VRRM; critical for low-power standby and high-impedance sensing nodes.
ER20 mJ - Avalanche energy rating with I(BR)R = 1 A; supports inductive load switching without failure in freewheeling applications.
TJ max.150 °C - Maximum allowable junction temperature; enables operation in under-hood automotive environments.

Pinout & Package

Package: SMA (DO-214AC), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Polarity indicated by cathode band.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry pointConnected to lower-potential side of circuit (e.g., switch node in buck converter); must handle 30 A surge transients.
CathodeForward current exit / reverse blocking terminalConnected to higher-potential rail (e.g., output capacitor positive); marked by color band; carries full load current and blocks 400 V.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive-grade reliability including temperature cycling, HTRB, and ESD; required for under-hood and ADAS power modules.
Soft recovery characteristicsControlled reverse recovery waveform minimizes voltage overshoot and EMI generation during turn-off in high-dV/dt environments.
Glass passivated pellet chip junctionHermetic protection against humidity and contamination; ensures long-term IR stability and prevents parameter drift over life.
MSL Level 1 (260 °C peak)Compatible with standard lead-free reflow profiles without baking; eliminates pre-conditioning overhead in high-volume SMT lines.
Low profile SMA packageHeight ≤ 2.29 mm enables use in space-constrained modules such as PoL converters and LED drivers.

Applications

Automotive DC/DC ConvertersTelecom AC/DC Front-Ends

Use Scenario: Step-down conversion from 12 V or 48 V battery to 3.3 V/5 V rails in infotainment and gateway ECUs.

IC Role / Device Role / Timing Role: Freewheeling diode in synchronous or asynchronous buck topology; handles reverse recovery during high-side FET turn-on.

Use Value: 75 ns trr and soft recovery reduce switching node ringing and EMI filter size; AEC-Q101 qualification ensures field reliability.

Use Scenario: Output rectification in 50–100 W telecom AC/DC adapters with active PFC and LLC stages.

IC Role / Device Role / Timing Role: Secondary-side ultrafast rectifier replacing Schottky diodes where higher VRRM and avalanche ruggedness are needed.

Use Value: 400 V VRRM supports wide input range designs; 20 mJ ER withstands inductive kickback from transformer leakage in flyback topologies.

Industrial Motor Drive InvertersConsumer Power Adapters

Use Scenario: Bootstrap supply clamping and auxiliary rail rectification in 3-phase IGBT gate driver power stages.

IC Role / Device Role / Timing Role: Clamping diode in high-side bootstrap circuit; conducts only during low-side FET conduction phase.

Use Value: Low 1.4 V VF minimizes bootstrap capacitor discharge loss; 150 °C TJ max supports operation near heat-generating IGBTs.

Use Scenario: Output rectification in compact USB-C PD adapters with multi-output flyback or QR controllers.

IC Role / Device Role / Timing Role: High-efficiency secondary-side rectifier operating at 65–130 kHz switching frequencies.

Use Value: SMA package enables automated placement; soft recovery reduces need for snubbers, lowering BOM count and cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STTH1L06S600 V VRRM, 1.0 A IF(AV), 60 ns trr, TO-277 packageHigher voltage rating but lower current; requires different footprint and thermal pad layoutSelect when 600 V blocking is mandatory and board space allows larger TO-277 outline.
ES1J-M3/84A600 V VRRM, 1.0 A IF(AV), 35 ns trr, SMA package, no AEC-Q101Same footprint but not automotive-qualified; lower trr trades off softness and avalanche capabilityUse in cost-sensitive consumer adapters where AEC-Q101 is unnecessary and faster trr is prioritized over ruggedness.

Compared with STTH1L06S and ES1J-M3/84A, the BYG20GHE3_A/H uniquely balances 400 V rating, 1.5 A current, AEC-Q101 compliance, and soft recovery in the industry-standard SMA package-making it optimal for automotive and industrial SMPS where reliability and EMI control are co-prioritized.

Availability

BYG20GHE3_A/H is available at Aetrix Electronics and suitable for automotive power modules, telecom AC/DC front-ends, and industrial motor drive inverters requiring stable component supply and long-term lifecycle support.

Supply support for BYG20GHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The BYG20GHE3_A/H belongs to Vishay's ultrafast avalanche rectifier product line, engineered for high-frequency power conversion in harsh environments-including automotive under-hood, industrial automation, and telecom infrastructure-where soft recovery, avalanche energy handling, and AEC-Q101 validation are essential.

FAQ

What is the maximum junction temperature rating for BYG20GHE3_A/H?

The BYG20GHE3_A/H has a maximum junction temperature (TJ) of 150 °C, verified per JEDEC standards. This rating allows continuous operation in high-ambient environments such as automotive engine compartments or enclosed industrial enclosures. Derating curves in the Vishay datasheet (Document #88958) define safe IF(AV) limits above 75 °C case temperature. Thermal design must account for RθJA values ranging from 100 to 150 °C/W depending on PCB copper area.

Is BYG20GHE3_A/H pin-compatible with BYG20DHE3_A/H or BYG20JHE3_A/H?

Yes-BYG20GHE3_A/H shares identical SMA (DO-214AC) package dimensions, pinout, and polarity marking (cathode band) with BYG20DHE3_A/H and BYG20JHE3_A/H. The only functional difference is VRRM: 200 V (D), 400 V (G), and 600 V (J). All three variants have identical IF(AV), trr, VF, and thermal characteristics, enabling direct substitution when voltage rating permits.

Does BYG20GHE3_A/H meet automotive qualification requirements?

Yes-BYG20GHE3_A/H is explicitly AEC-Q101 qualified, as confirmed in the Vishay datasheet (Rev. 21-Feb-2020, Doc. #88958) and ordering code suffix "HE3". This qualification covers stress tests including temperature cycling, high-temperature reverse bias (HTRB), and ESD per JESD22-A114. It is approved for use in automotive powertrain, body electronics, and ADAS subsystems where reliability under thermal and electrical stress is critical.

What does the "_A/H" suffix mean in BYG20GHE3_A/H?

The "_A/H" suffix in BYG20GHE3_A/H indicates two attributes: "A" is the revision code per Vishay's internal documentation control, and "H" denotes the preferred packaging code for 7-inch diameter plastic tape-and-reel delivery with 1800 units per reel. This matches the ordering information table in Document #88958 and confirms compatibility with standard SMT pick-and-place feeders.

How does the soft recovery characteristic of BYG20GHE3_A/H improve system-level EMI performance?

The soft recovery behavior of BYG20GHE3_A/H produces a gradual, low-dV/dt reverse current decay during turn-off-reducing high-frequency ringing and voltage overshoot at switching nodes. In practice, this lowers conducted and radiated EMI, allowing smaller or fewer EMI filters in DC/DC converters. Unlike hard-recovery diodes, it avoids abrupt current collapse that excites parasitic LC resonances in PCB traces and transformer windings-directly improving EMC test margins in automotive and telecom applications.

BYG20GHE3_A/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
-
Package/Case:
DO-214AC, SMA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Avalanche
Voltage - DC Reverse (Vr) (Max):
400 V
Current - Average Rectified (Io):
1.5A
Voltage - Forward (Vf) (Max) @ If:
1.4 V @ 1.5 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
75 ns
Current - Reverse Leakage @ Vr:
1 µA @ 400 V
Capacitance @ Vr, F:
-
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AC (SMA)
Operating Temperature - Junction:
-55°C ~ 150°C

BYG20GHE3_A/H FAQ

1.How can I place an order for BYG20GHE3_A/H through Aetrix?

Please submit a Request for Quotation (RFQ) for BYG20GHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BYG20GHE3_A/H reliable?

The price and inventory of BYG20GHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BYG20GHE3_A/H is usually 5 days.

3.What payment methods are accepted for BYG20GHE3_A/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BYG20GHE3_A/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BYG20GHE3_A/H?

BYG20GHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BYG20GHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BYG20GHE3_A/H?

For technical support, including BYG20GHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BYG20GHE3_A/H requirements.

6.How does Aetrix verify that BYG20GHE3_A/H is sourced from the original manufacturer or authorized distributors?

All BYG20GHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BYG20GHE3_A/H meets industry standards.

7.What is the process for return or replacement of BYG20GHE3_A/H?

All BYG20GHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with BYG20GHE3_A/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BYG20GHE3_A/H part is unused and in its original packaging.

Return procedure for BYG20GHE3_A/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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