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Vishay General Semiconductor - Diodes Division BYG22DHE3_A/I
- Part No.:
- BYG22DHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
BYG22DHE3_A/I.pdf
- Description:
- DIODE AVALANCHE 200V 2A DO214AC
- Quantity:
- Payment:
- Shipping:
Inventory:7,317
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Product details
Overview
BYG22DHE3_A/I from Vishay General Semiconductor is an ultrafast avalanche SMD rectifier diode in SMA (DO-214AC) package, rated for 200 V repetitive peak reverse voltage (VRRM), 2.0 A average forward current (IF(AV)), and 25 ns reverse recovery time (trr). It features low forward voltage (1.1 V at 2.0 A), soft recovery characteristic, and AEC-Q101 qualification for automotive-grade reliability - used in high-frequency freewheeling and rectification within SMPS inverters.
For engineers reviewing the BYG22DHE3_A/I datasheet, BYG22DHE3_A/I pinout, BYG22DHE3_A/I application, or BYG22DHE3_A/I equivalent, key selection factors include its 200 V VRRM rating, 25 ns trr for switching efficiency, AEC-Q101 qualification status, SMA package thermal resistance (RθJA = 100–150 °C/W depending on PCB layout), and cathode-band polarity marking.
Technical Context
This device operates as a single-diode, unidirectional, silicon junction rectifier with glass-passivated chip construction. Its ultrafast soft-recovery behavior minimizes EMI in high-frequency switching circuits, and the 20 mJ avalanche energy rating (ER) supports robust inductive load switching without clamping circuitry.
The BYG22DHE3_A/I is thermally optimized for surface-mount applications: RθJL = 25 °C/W (junction-to-lead), and RθJA ranges from 100 °C/W (on Al₂O₃ ceramic) to 150 °C/W (on epoxy-glass), enabling design flexibility across consumer, industrial, and automotive PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 200 V - maximum repetitive reverse blocking voltage; defines safe operating ceiling in DC-link or flyback snubber circuits |
| IF(AV) | 2.0 A - continuous forward current capability at TA = 75 °C on standard FR-4; derates to zero at TJ = 150 °C |
| trr | 25 ns - measured at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A; enables >1 MHz switching in resonant converters |
| VF @ 2.0 A | 1.1 V - forward drop at rated average current; determines conduction loss and thermal load in high-duty-cycle operation |
| IR @ 25 °C | 1.0 μA - leakage current at full VRRM; critical for low-power standby and high-impedance sensing nodes |
| ER | 20 mJ - non-repetitive avalanche energy handling; allows safe turn-off of inductive loads without external TVS |
| TJ max. | 150 °C - maximum junction temperature; supports extended operation in under-hood automotive environments |
Pinout & Package
SMA (DO-214AC) surface-mount package with matte tin-plated leads, MSL Level 1 (260 °C peak reflow), and cathode indicated by a color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry terminal | Connected to lower-potential side (e.g., switch node in buck freewheel path); must handle 35 A surge (IFSM) |
| Cathode | Forward current exit terminal | Marked with color band; connects to output rail or ground return; carries full IF(AV) and withstands VRRM |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast soft recovery | 25 ns trr with low ringing and minimal EMI generation during commutation in hard-switched topologies |
| AEC-Q101 qualified | Validated for automotive powertrain and body electronics per stress test requirements (HTOL, TC, H3TRB, etc.) |
| Glass passivated junction | Enhanced moisture resistance and long-term reliability vs. epoxy-passivated alternatives in humid environments |
| Low VF and IR | 1.1 V @ 2.0 A and 1.0 μA @ 25 °C jointly reduce both conduction loss and standby power consumption |
| MSL Level 1 compliance | Enables standard SMT reflow without baking; compatible with high-volume automated placement lines |
Applications
| Automotive DC-DC Converters | Server PSU Freewheeling Diodes |
|---|---|
Use Scenario: 12 V–48 V bidirectional DC-DC conversion in 48 V mild-hybrid systems. IC Role / Device Role / Timing Role: Freewheeling diode in synchronous rectifier stage, conducting during low-side FET off-time. Use Value: 25 ns trr and 200 V VRRM enable efficient 300–500 kHz operation while surviving load dump transients up to 60 V. |
Use Scenario: Output rectification in 80 PLUS Titanium server PSUs with multi-phase LLC resonant topology. IC Role / Device Role / Timing Role: Secondary-side uncontrolled rectifier replacing Schottky diodes where higher VRRM and avalanche ruggedness are required. Use Value: 20 mJ ER rating eliminates need for parallel TVS protection during transformer reset events. |
| Telecom AC-DC Adapters | Industrial Motor Drive Snubbers |
Use Scenario: High-density 65 W–100 W USB-C PD adapters operating at >150 kHz switching frequency. IC Role / Device Role / Timing Role: Output rectifier in active-clamp flyback or QR PFC front-end stages. Use Value: Soft recovery characteristic reduces EMI filter component count and meets CISPR-32 Class B limits without added shielding. |
Use Scenario: RC snubber network clamp diode in 3-phase IGBT inverter modules for HVAC compressors. IC Role / Device Role / Timing Role: Avalanche-rated clamp element absorbing inductive turn-off energy from motor windings. Use Value: 20 mJ single-pulse avalanche energy rating ensures reliable operation over 10⁶ cycles without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH2R02DJF | 200 V VRRM, 2.0 A IF(AV), but trr = 35 ns; TO-277 package (lower RθJA = 60 °C/W) | Better thermal performance but slower recovery; less suitable for >300 kHz designs | Prefer when board space allows TO-277 and thermal budget is tighter than EMI budget |
| ES2D-E3/57T | 200 V VRRM, 2.0 A IF(AV), trr = 35 ns; SMA package but not AEC-Q101 qualified | Lacks automotive qualification; lower cost for commercial-grade telecom or computing use | Select for non-automotive applications where AEC-Q101 is not mandated and cost sensitivity is high |
Compared with STTH2R02DJF and ES2D-E3/57T, the BYG22DHE3_A/I uniquely balances 25 ns trr, AEC-Q101 qualification, and SMA footprint - making it optimal for space-constrained, high-frequency, automotive-compliant designs where EMI control and transient ruggedness are prioritized over absolute thermal resistance.
Availability
BYG22DHE3_A/I is available at Aetrix Electronics and suitable for automotive DC-DC converters, server power supplies, telecom adapters, and industrial motor drive snubbers requiring stable component supply and AEC-Q101 compliance.
Supply support for BYG22DHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.
The BYG22 series targets high-frequency power conversion systems demanding ultrafast recovery, avalanche energy tolerance, and automotive-grade validation - designed specifically for SMPS, inverters, and freewheeling paths where Schottky limitations (voltage rating, leakage) or standard fast recovery trade-offs (EMI, ruggedness) are unacceptable.
FAQ
What is the maximum junction temperature rating for BYG22DHE3_A/I?
The BYG22DHE3_A/I has a maximum junction temperature (TJ max.) of 150 °C, verified per JEDEC standards and validated in AEC-Q101 stress testing. This rating allows sustained operation in under-hood automotive environments and high-ambient industrial settings, provided thermal design maintains junction temperature below this limit using appropriate PCB copper area or heatsinking.
Is BYG22DHE3_A/I AEC-Q101 qualified?
Yes, BYG22DHE3_A/I is AEC-Q101 qualified - confirmed by Vishay's official documentation (Document Number: 88959, Revision: 21-Feb-2020). The "HE3" suffix explicitly denotes RoHS-compliant and AEC-Q101 qualified variants. This qualification covers HTOL, temperature cycling, H3TRB, and other stress tests required for automotive power electronics.
What does the "I" suffix mean in BYG22DHE3_A/I?
The "I" suffix in BYG22DHE3_A/I indicates packaging in 13-inch diameter plastic tape and reel, with a base quantity of 7500 units - per Vishay's ordering information table. It does not affect electrical or thermal specifications; it is purely a logistics and delivery mode designation distinct from the "H" (7-inch reel, 1800 units) variant.
How does the soft recovery characteristic of BYG22DHE3_A/I benefit EMI performance?
The soft recovery characteristic of BYG22DHE3_A/I reduces high-frequency ringing during reverse recovery, directly lowering radiated and conducted EMI. Measured trr of 25 ns with controlled di/dt slope minimizes voltage overshoot across parasitic inductances, reducing filter component count and easing compliance with CISPR-32 or CISPR-25 standards in automotive and telecom applications.
What is the thermal resistance from junction to ambient (RθJA) for BYG22DHE3_A/I on standard FR-4?
On standard epoxy-glass PCB (50 mm², 35 μm Cu), BYG22DHE3_A/I exhibits RθJA = 150 °C/W (per Note 1 in Vishay Doc. 88959). With enhanced copper layout (50 mm², 35 μm Cu on FR-4), it improves to 125 °C/W (Note 2); on Al₂O₃ ceramic, it reaches 100 °C/W (Note 3). These values guide thermal pad sizing and airflow requirements in final layout.
BYG22DHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- DO-214AC, SMA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Avalanche
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 2A
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 2 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 25 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 200 V
- Capacitance @ Vr, F:
- -
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
- Operating Temperature - Junction:
- -55°C ~ 150°C
BYG22DHE3_A/I FAQ
1.How can I place an order for BYG22DHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for BYG22DHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BYG22DHE3_A/I reliable?
The price and inventory of BYG22DHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BYG22DHE3_A/I is usually 5 days.
3.What payment methods are accepted for BYG22DHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BYG22DHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BYG22DHE3_A/I?
BYG22DHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BYG22DHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BYG22DHE3_A/I?
For technical support, including BYG22DHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BYG22DHE3_A/I requirements.
6.How does Aetrix verify that BYG22DHE3_A/I is sourced from the original manufacturer or authorized distributors?
All BYG22DHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BYG22DHE3_A/I meets industry standards.
7.What is the process for return or replacement of BYG22DHE3_A/I?
All BYG22DHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with BYG22DHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BYG22DHE3_A/I part is unused and in its original packaging.
Return procedure for BYG22DHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BYG22DHE3_A/I Tags
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