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Vishay General Semiconductor - Diodes Division BYG23MHE3_A/H
- Part No.:
- BYG23MHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
BYG23MHE3_A/H.pdf
- Description:
- DIODE AVALANCHE 1KV 1.5A DO214AC
- Quantity:
- Payment:
- Shipping:
Inventory:6,354
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Product details
Overview
BYG23MHE3_A/H from Vishay General Semiconductor is an ultrafast avalanche SMD rectifier in SMA (DO-214AC) package, rated for 1000 V repetitive peak reverse voltage, 1.5 A average forward current at 65 °C, and 75 ns reverse recovery time. It delivers low forward voltage (1.7 V @ 1.0 A, 25 °C), 5.0 µA max reverse leakage at 25 °C, and 20 mJ avalanche energy rating - used in high-frequency freewheeling and rectification in automotive SMPS and telecom inverters.
For engineers reviewing the BYG23MHE3_A/H datasheet, BYG23MHE3_A/H pinout, BYG23MHE3_A/H application, or BYG23MHE3_A/H equivalent, key selection criteria include its AEC-Q101 qualification (HE3 suffix), MSL Level 1 moisture sensitivity, 150 °C max junction temperature, and compatibility with automated SMT placement on standard reflow profiles up to 260 °C peak.
Technical Context
This device is a single-die, planar passivated silicon rectifier optimized for high-speed switching in inductive-load circuits. Its ultrafast trr of 75 ns enables efficient operation in 100–500 kHz SMPS topologies, while the 20 mJ non-repetitive avalanche energy rating supports robust turn-off handling of inductive kickback without external snubbers.
The glass-passivated junction ensures stable IR performance across temperature (5 µA @ 25 °C, 50 µA @ 125 °C), and the SMA package provides thermal resistance of 25 °C/W (junction-to-case) and 100–150 °C/W (junction-to-ambient), depending on PCB copper area - critical for thermal design in space-constrained power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1000 V - supports input rectification in 800 V DC bus or 700 V AC line applications without derating |
| IF(AV) | 1.5 A @ TA = 65 °C - defines continuous conduction capability on standard FR-4 with 50 mm² copper |
| trr | 75 ns - enables minimal switching loss in high-frequency flyback and forward converters |
| VF | 1.7 V @ 1.0 A, 25 °C - determines conduction loss and thermal load in primary-side freewheeling paths |
| IR | 5.0 µA @ VRRM, 25 °C - ensures low standby leakage in high-impedance hold-up circuits |
| ER | 20 mJ - specifies maximum inductive energy absorption during MOSFET/IGBT turn-off without failure |
| TJ(max) | 150 °C - sets maximum allowable junction temperature for reliability in sealed automotive enclosures |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Polarity indicated by cathode band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to switch node or transformer secondary in freewheeling path; must handle 30 A surge |
| Cathode | Forward current exit / reverse blocking terminal | Connected to output rail or ground return; marked by color band; withstands full VRRM |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and body electronics per stress test requirements (HE3 suffix) |
| MSL Level 1 | Unlimited floor life at ≤30 °C/85 % RH; compatible with standard SMT reflow (peak 260 °C) |
| Glass passivated junction | Ensures long-term IR stability and reduced parameter drift over 15+ year automotive service life |
| Low profile SMA package | Height ≤1.98 mm - fits under low-clearance heatsinks and enables dense PCB layouts |
| Halogen-free option available | HM3 variant meets IEC 61249-2-21; HE3 variant is RoHS-compliant but not halogen-free |
Applications
| Automotive DC-DC Converters | Server PSU Secondary Rectification |
|---|---|
Use Scenario: 48 V–12 V buck converter in ADAS domain controller power supply. IC Role / Device Role / Timing Role: Freewheeling diode synchronized with high-side MOSFET switching at 300 kHz. Use Value: 75 ns trr minimizes reverse recovery loss; 20 mJ ER absorbs inductive energy during MOSFET turn-off without snubber. | Use Scenario: Output rectification in 12 V/60 A server VRM using synchronous rectification assist. IC Role / Device Role / Timing Role: Auxiliary clamp diode paralleled with SR FET to manage body diode conduction during dead-time. Use Value: 1.7 V VF limits conduction loss during brief asynchronous conduction; 150 °C TJ(max) supports high-ambient datacenter environments. |
| Telecom 48 V Rectifier Modules | Industrial Motor Drive Braking Circuits |
Use Scenario: Input stage rectification in distributed 48 V telecom power shelf feeding multiple DC-DC modules. IC Role / Device Role / Timing Role: Bridge leg diode in full-wave rectifier operating at 100 kHz PWM-modulated line frequency. Use Value: 1000 V VRRM accommodates 48 V nominal with 2× safety margin against transients; low IR ensures minimal no-load power loss. | Use Scenario: Regenerative braking path in 24 V BLDC motor drive with H-bridge topology. IC Role / Device Role / Timing Role: Clamp diode across motor winding to recirculate back-EMF during PWM off-time. Use Value: 30 A IFSM handles peak braking currents; avalanche-rated ER prevents failure during rapid deceleration events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH1L06S | 600 V VRRM, 1.0 A IF(AV), 50 ns trr, TO-277 package | Limited to ≤600 V systems; lower surge rating (25 A) | Select when lower VRRM suffices and faster trr is prioritized over avalanche ruggedness |
| ES1J-M3/5AT | 600 V VRRM, 1.0 A IF(AV), 35 ns trr, SMA package, no avalanche rating | Not rated for inductive energy absorption; unsuitable for freewheeling in high-L circuits | Choose only for low-energy signal rectification where trr < 40 ns is mandatory and VRRM ≤ 600 V |
Compared with STTH1L06S and ES1J-M3/5AT, BYG23MHE3_A/H uniquely combines 1000 V rating, 20 mJ avalanche capability, and AEC-Q101 qualification - making it the only viable option for automotive 48 V–12 V converters requiring both high-voltage margin and inductive fault tolerance.
Availability
BYG23MHE3_A/H is available at Aetrix Electronics and suitable for automotive DC-DC converters, telecom rectifier modules, and industrial motor drive braking circuits requiring stable component supply, AEC-Q101 compliance, and consistent lead-time visibility.
Supply support for BYG23MHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability, power efficiency, and automotive-grade validation.
The BYG23MHE3_A/H belongs to Vishay's ultrafast avalanche rectifier product line, engineered specifically for high-reliability freewheeling and snubbing in automotive and industrial switching power supplies where inductive energy management is critical.
FAQ
What does the "HE3" suffix indicate in BYG23MHE3_A/H?
The "HE3" suffix in BYG23MHE3_A/H denotes RoHS-compliant construction with AEC-Q101 qualification for automotive applications. It confirms compliance with JESD201 Class 2 whisker testing, MSL Level 1, and full stress qualification including temperature cycling, HTRB, and HTGB - distinguishing it from commercial-grade E3 variants.
Is BYG23MHE3_A/H suitable for use in synchronous rectification circuits?
BYG23MHE3_A/H is not a synchronous rectifier IC but serves as a robust clamp or auxiliary diode in synchronous designs. Its 75 ns trr and 20 mJ avalanche rating make it ideal for managing dead-time conduction and inductive kickback when the main SR FET is off - commonly deployed alongside controllers like MP6908 or UCC24612.
What is the thermal resistance of BYG23MHE3_A/H under standard PCB mounting conditions?
BYG23MHE3_A/H has RθJC = 25 °C/W (junction-to-case) and RθJA = 150 °C/W on 17 mm² Cu, 125 °C/W on 50 mm² Cu, and 100 °C/W on Al₂O₃ ceramic with 50 mm² Cu. These values are measured per JEDEC standards and define thermal design margins for sustained 1.5 A operation in enclosed environments.
Does BYG23MHE3_A/H require special handling during reflow soldering?
No special handling is required for BYG23MHE3_A/H during reflow: it meets MSL Level 1 per J-STD-020 and supports peak temperatures up to 260 °C. Standard lead-free reflow profiles (e.g., IPC/JEDEC J-STD-020) apply - no baking or dry-packaging needed prior to assembly.
How does the avalanche energy rating of BYG23MHE3_A/H improve system reliability?
The 20 mJ non-repetitive avalanche energy rating of BYG23MHE3_A/H allows it to safely absorb inductive energy during MOSFET/IGBT turn-off without clamping circuitry. In automotive DC-DC converters, this eliminates snubber losses and prevents voltage overshoot-induced failures - directly extending field lifetime in high-L, high-dI/dt applications.
BYG23MHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- DO-214AC, SMA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Avalanche
- Voltage - DC Reverse (Vr) (Max):
- 1000 V
- Current - Average Rectified (Io):
- 1.5A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 75 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 1000 V
- Capacitance @ Vr, F:
- -
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
- Operating Temperature - Junction:
- -55°C ~ 150°C
BYG23MHE3_A/H FAQ
1.How can I place an order for BYG23MHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for BYG23MHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BYG23MHE3_A/H reliable?
The price and inventory of BYG23MHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BYG23MHE3_A/H is usually 5 days.
3.What payment methods are accepted for BYG23MHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BYG23MHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BYG23MHE3_A/H?
BYG23MHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BYG23MHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BYG23MHE3_A/H?
For technical support, including BYG23MHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BYG23MHE3_A/H requirements.
6.How does Aetrix verify that BYG23MHE3_A/H is sourced from the original manufacturer or authorized distributors?
All BYG23MHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BYG23MHE3_A/H meets industry standards.
7.What is the process for return or replacement of BYG23MHE3_A/H?
All BYG23MHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with BYG23MHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BYG23MHE3_A/H part is unused and in its original packaging.
Return procedure for BYG23MHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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