Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Vishay General Semiconductor - Diodes Division BYG23M-M3/TR3

Name: BYG23M-M3/TR3
Brand: Vishay General Semiconductor - Diodes Division
SKU: BYG23M-M3/TR3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BYG23M-M3/TR3

Manufacturer:: Vishay General Semiconductor - Diodes Division

Category:: Single Diodes

Package:: DO-214AC, SMA

Datasheet:: BYG23M-M3/TR3.pdf

Description:: DIODE AVALANCHE 1KV 1.5A DO214AC

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:11,510

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BYG23M-M3/TR3 from Vishay General Semiconductor is an ultrafast avalanche SMD rectifier in SMA (DO-214AC) package, rated for 1000 V repetitive peak reverse voltage, 1.5 A average forward current at 65 °C, and 75 ns reverse recovery time. It features low reverse leakage (5 µA at 25 °C), 1.7 V forward voltage at 1.0 A, and is halogen-free, RoHS-compliant, and qualified to JESD 201 Class 2 whisker standard - used in high-frequency freewheeling and SMPS output rectification.

For engineers reviewing the BYG23M-M3/TR3 datasheet, BYG23M-M3/TR3 pinout, BYG23M-M3/TR3 application, or BYG23M-M3/TR3 equivalent, key selection criteria include its 1000 V V_RRM, 75 ns t_rr, 20 mJ avalanche energy rating, thermal resistance (R_θJA = 125 °C/W on 50 mm² Cu), and compatibility with automated SMT placement per J-STD-002 solderability.

Technical Context

This device operates as a single-diode, unidirectional, avalanche-rated rectifier optimized for switching-mode power supplies where fast recovery and robust overvoltage clamping are required. Its glass-passivated junction ensures stable reverse characteristics, while the SMA package supports high-density PCB layouts and meets MSL Level 1 per J-STD-020.

The BYG23M-M3/TR3 delivers 20 mJ non-repetitive pulse energy in avalanche mode under inductive load switch-off conditions (I_(BR)R = 1 A, T_J = 25 °C), with junction temperature range from –55 °C to +150 °C and thermal resistance R_θJC = 25 °C/W - enabling reliable operation in thermally constrained automotive and industrial converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	1000 V - Withstands repetitive reverse voltages up to 1 kV without breakdown, suitable for 800 V DC bus applications with safety margin.
t_rr	75 ns - Enables efficient high-frequency rectification (>100 kHz) with minimal switching loss and EMI generation.
I_F(AV)	1.5 A at T_A = 65 °C - Supports continuous conduction mode output rectification in compact 30–60 W SMPS designs.
V_F	1.7 V at I_F = 1.0 A, T_J = 25 °C - Limits forward conduction loss to ~1.7 W at 1 A, aiding thermal management in sealed enclosures.
I_R	5 µA at V_R = V_RRM, T_J = 25 °C - Ensures low standby power loss in high-impedance bias networks and hold-up circuits.
E_R	20 mJ - Absorbs inductive turn-off energy during flyback/freewheeling, protecting MOSFETs in buck-derived topologies.
R_θJA	125 °C/W (on 50 mm² Cu) - Allows ~1.2 W power dissipation before reaching 150 °C junction limit under typical PCB layout.

Pinout & Package

Package: SMA (DO-214AC), surface-mount, low-profile plastic case with matte tin-plated leads; cathode indicated by color band.

Pin/Terminal	Circuit Role	Design Meaning
Anode	Forward current entry terminal	Connected to lower-potential side of load or switch node; must be routed with low-inductance path in high-dI/dt freewheeling paths.
Cathode	Forward current exit / reverse-blocking terminal	Marked with band; ties to positive rail or transformer secondary output; serves as clamping reference in avalanche operation.

Key Features

Feature	Design Value
Glass-passivated junction	Ensures long-term stability of reverse leakage and breakdown voltage across temperature and humidity stress.
MSL Level 1 rating	Allows unlimited floor life and reflow at 260 °C peak without preconditioning - simplifies SMT line integration.
Halogen-free, RoHS-compliant (M3 suffix)	Meets IPC-1752A material declaration requirements and EU environmental compliance for industrial and automotive end equipment.
JESD 201 Class 2 whisker resistance	Prevents tin whisker growth under thermal cycling, critical for reliability in automotive under-hood modules.
Avalanche energy rating (20 mJ)	Provides controlled, non-destructive clamping during inductive switching transients - eliminates need for external snubbers in many designs.

Applications

Switch-Mode Power Supply Output Rectification	Automotive DC-DC Converter Freewheeling
Use Scenario: High-efficiency 24 V to 5 V/3.3 V isolated buck-derived converter in infotainment head units. IC Role / Device Role / Timing Role: Freewheeling diode conducting during MOSFET off-time to maintain inductor current continuity. Use Value: 75 ns t_rr minimizes reverse recovery charge loss; 1000 V V_RRM accommodates 400 V transient spikes on 24 V input rails.	Use Scenario: 12 V battery-fed boost converter supplying 48 V for active suspension control ECUs. IC Role / Device Role / Timing Role: Output rectifier handling pulsed 5–8 A currents at 200–500 kHz switching frequency. Use Value: 20 mJ avalanche rating absorbs energy from inductor flyback during fault events; –55 °C to +150 °C rating supports under-hood operation.
Telecom AC-DC Front-End Rectification	Industrial Motor Drive Snubber Diode
Use Scenario: Universal-input (90–264 V_AC) PFC+LLC combo supply for 5G base station power modules. IC Role / Device Role / Timing Role: Secondary-side synchronous rectification replacement in LLC resonant converter output stage. Use Value: Low 5 µA I_R reduces no-load losses; 1.7 V V_F balances conduction loss vs. thermal footprint in air-cooled modules.	Use Scenario: IGBT-based 3-phase inverter driving HVAC compressors in commercial HVAC systems. IC Role / Device Role / Timing Role: Clamping diode across DC-link capacitor to suppress voltage overshoot during IGBT turn-off. Use Value: Controlled avalanche behavior limits peak clamp voltage to <1100 V; SMA package enables direct mounting on heatsink near power stage.

Switch-Mode Power Supply Output Rectification

Automotive DC-DC Converter Freewheeling

Use Scenario: High-efficiency 24 V to 5 V/3.3 V isolated buck-derived converter in infotainment head units.

IC Role / Device Role / Timing Role: Freewheeling diode conducting during MOSFET off-time to maintain inductor current continuity.

Use Value: 75 ns t_rr minimizes reverse recovery charge loss; 1000 V V_RRM accommodates 400 V transient spikes on 24 V input rails.

Use Scenario: 12 V battery-fed boost converter supplying 48 V for active suspension control ECUs.

IC Role / Device Role / Timing Role: Output rectifier handling pulsed 5–8 A currents at 200–500 kHz switching frequency.

Use Value: 20 mJ avalanche rating absorbs energy from inductor flyback during fault events; –55 °C to +150 °C rating supports under-hood operation.

Telecom AC-DC Front-End Rectification

Industrial Motor Drive Snubber Diode

Use Scenario: Universal-input (90–264 V_AC) PFC+LLC combo supply for 5G base station power modules.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectification replacement in LLC resonant converter output stage.

Use Value: Low 5 µA I_R reduces no-load losses; 1.7 V V_F balances conduction loss vs. thermal footprint in air-cooled modules.

Use Scenario: IGBT-based 3-phase inverter driving HVAC compressors in commercial HVAC systems.

IC Role / Device Role / Timing Role: Clamping diode across DC-link capacitor to suppress voltage overshoot during IGBT turn-off.

Use Value: Controlled avalanche behavior limits peak clamp voltage to <1100 V; SMA package enables direct mounting on heatsink near power stage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STTH1L06S	V_RRM = 600 V, t_rr = 35 ns, I_F(AV) = 1.0 A, SMA package	Limited to ≤400 V DC bus; faster recovery but lower voltage margin and current rating	Select when 600 V rating suffices and sub-50 ns t_rr is prioritized over avalanche robustness.
ES1J-M3/5AT	V_RRM = 600 V, t_rr = 35 ns, I_F(AV) = 1.0 A, SMA package, no avalanche rating	No specified avalanche energy; not qualified to AEC-Q101 or JESD 201 Class 2	Use only in cost-sensitive consumer-grade SMPS where 600 V rating and basic reliability suffice.

Compared with STTH1L06S and ES1J-M3/5AT, the BYG23M-M3/TR3 provides higher voltage margin (1000 V), certified avalanche capability (20 mJ), and automotive-grade process qualifications - making it preferred for industrial and automotive power stages requiring transient resilience and long-term reliability.

Availability

BYG23M-M3/TR3 is available at Aetrix Electronics and suitable for high-frequency rectification, freewheeling, and avalanche clamping applications requiring stable component supply, consistent halogen-free compliance, and extended temperature operation.

Supply support for BYG23M-M3/TR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.

The BYG23M-M3/TR3 belongs to Vishay's ultrafast avalanche rectifier product line, engineered for high-voltage, high-frequency power conversion in automotive, industrial, and telecom infrastructure where robust transient handling and long-term parametric stability are essential.

FAQ

What is the maximum junction temperature rating for BYG23M-M3/TR3?

The BYG23M-M3/TR3 has a maximum operating junction temperature of +150 °C and a storage temperature range of –55 °C to +150 °C. This rating allows reliable operation in under-hood automotive environments and enclosed industrial power supplies where ambient temperatures exceed 85 °C. Derating curves in the datasheet confirm 1.5 A I_F(AV) is valid up to 65 °C ambient with standard PCB copper area.

Does BYG23M-M3/TR3 have an AEC-Q101 qualification?

No, the BYG23M-M3/TR3 is halogen-free and RoHS-compliant but not AEC-Q101 qualified. The AEC-Q101 version uses the HM3 suffix (e.g., BYG23MHM3_A/I). The M3 suffix indicates commercial-grade qualification meeting JESD 201 Class 2 whisker resistance and MSL Level 1, but not full automotive stress testing.

What does the "TR3" suffix indicate in BYG23M-M3/TR3?

The "TR3" suffix denotes packaging in 13-inch diameter plastic tape and reel, containing 7500 units per reel. This format is optimized for high-volume SMT assembly lines using large-capacity feeders. The base part BYG23M-M3 defines the halogen-free, RoHS-compliant die and termination; TR3 specifies the delivery method and quantity, not electrical or thermal differences.

How does the avalanche energy rating of BYG23M-M3/TR3 improve system reliability?

The BYG23M-M3/TR3 is rated for 20 mJ non-repetitive avalanche energy (E_R) under defined test conditions. This allows it to safely absorb inductive turn-off energy during MOSFET/IGBT switching events without failure - reducing or eliminating the need for external RC snubbers in flyback, buck, and motor drive circuits. That directly improves board-level reliability and reduces component count.

Can BYG23M-M3/TR3 replace BYG23M-E3/TR3 in a design?

Yes, BYG23M-M3/TR3 can replace BYG23M-E3/TR3 in most applications, as both share identical electrical specifications, thermal performance, and SMA package dimensions. The only difference is material composition: M3 is halogen-free while E3 is standard RoHS-compliant. No layout or schematic changes are needed, but verify halogen-free compliance requirements in your end-equipment standards before substitution.

BYG23M-M3/TR3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay General Semiconductor - Diodes Division

Series:: -

Package/Case:: DO-214AC, SMA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: Avalanche

Voltage - DC Reverse (Vr) (Max):: 1000 V

Current - Average Rectified (Io):: 1.5A

Voltage - Forward (Vf) (Max) @ If:: 1.7 V @ 1 A

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 75 ns

Current - Reverse Leakage @ Vr:: 5 µA @ 1000 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DO-214AC (SMA)

Operating Temperature - Junction:: -55°C ~ 150°C

BYG23M-M3/TR3 FAQ

1.How can I place an order for BYG23M-M3/TR3 through Aetrix?

Please submit a Request for Quotation (RFQ) for BYG23M-M3/TR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BYG23M-M3/TR3 reliable?

The price and inventory of BYG23M-M3/TR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BYG23M-M3/TR3 is usually 5 days.

3.What payment methods are accepted for BYG23M-M3/TR3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BYG23M-M3/TR3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BYG23M-M3/TR3?

BYG23M-M3/TR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BYG23M-M3/TR3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BYG23M-M3/TR3?

For technical support, including BYG23M-M3/TR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BYG23M-M3/TR3 requirements.

6.How does Aetrix verify that BYG23M-M3/TR3 is sourced from the original manufacturer or authorized distributors?

All BYG23M-M3/TR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BYG23M-M3/TR3 meets industry standards.

7.What is the process for return or replacement of BYG23M-M3/TR3?

All BYG23M-M3/TR3 units undergo pre-shipment inspection (PSI). If there is an issue with BYG23M-M3/TR3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BYG23M-M3/TR3 part is unused and in its original packaging.

Return procedure for BYG23M-M3/TR3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …