Nexperia USA Inc. BZB84-B75,215

Overview

BZB84-B75,215 from Nexperia is a dual common-anode Zener diode in SOT23 (TO-236AB) package, rated for 73.5 V to 76.5 V nominal Zener voltage at 2 mA, with ±2 % tolerance, 500 Ω typical differential resistance, and 0.05 µA reverse current at 52.5 V. It delivers 40 W non-repetitive peak reverse power dissipation and supports automotive-grade regulation in compact surface-mounted designs.

For engineers reviewing the BZB84-B75,215 datasheet, BZB84-B75,215 pinout, BZB84-B75,215 application, or BZB84-B75,215 equivalent, this device serves as a precision dual-Zener reference for overvoltage clamping, bidirectional voltage regulation, and rail-to-rail protection in space-constrained automotive and industrial control circuits.

Technical Context

This dual-Zener diode integrates two independent Zener junctions sharing a common anode (Pin 3), enabling symmetrical clamping or complementary reference generation in a single 3-pin SMT package. Its AEC-Q101 qualification confirms suitability for automotive environments with operating ambient temperatures from −55 °C to +150 °C.

The device exhibits a positive temperature coefficient of +52.5 mV/K at 2 mA, low 35 pF capacitance at 0 V, and thermal resistance of 100 K/W from junction to solder point - enabling stable regulation under transient surges up to 100 µs with minimal thermal drift.

Key Specifications

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package: 3-pin, 1.3 mm × 2.9 mm footprint, 1.1 mm height, tin-plated leads compatible with standard reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-Zener regulation applications.

Compared with MMBZ5275B and BZX84-C75, BZB84-B75,215 uniquely delivers matched dual-Zener performance in one footprint with ±2 % accuracy and sub-µA leakage - making it the only option for space-limited, high-precision bidirectional regulation in automotive and industrial systems.

Availability

BZB84-B75,215 is available at Aetrix Electronics and suitable for automotive battery management, industrial PLC input protection, medical infusion pump power rails, and telecom DC-DC converter feedback requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BZB84-B75,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and mobile markets.

The BZB84 series belongs to Nexperia's AEC-Q101-qualified Zener portfolio, engineered specifically for high-reliability voltage regulation and transient protection in harsh-environment automotive electronics and industrial control systems.

FAQ

What is the maximum continuous power dissipation for BZB84-B75,215 at 70 °C ambient?

At 70 °C ambient, the device's total power dissipation must be derated linearly from 300 mW at 25 °C using its 417 K/W junction-to-ambient thermal resistance. This yields a maximum continuous power of 184 mW - calculated as 300 mW × (1 − (70 − 25)/417). Exceeding this risks junction temperature exceeding 150 °C.

Can BZB84-B75,215 be used for bidirectional ESD protection on a USB data line?

No - while its dual configuration supports bidirectional clamping, its 75 V Zener voltage and 35 pF capacitance are unsuitable for USB 2.0 (max 480 Mbps) or USB 3.0 signals. The high clamping voltage would damage downstream PHYs, and capacitance exceeds the 1–3 pF limit for signal integrity. Use dedicated low-capacitance TVS arrays instead.

How does the common-anode topology affect thermal coupling between the two Zener diodes?

The shared anode metallization creates strong thermal coupling: both junctions reside on the same silicon die and share the same thermal path to Pin 3. Under asymmetric loading, self-heating in one diode directly raises the junction temperature of the other, causing predictable, matched drift - beneficial for ratiometric reference designs but requiring derating if both diodes operate near P_ZSM simultaneously.

Is the 40 W non-repetitive peak power rating per diode or for the entire package?

The 40 W non-repetitive peak reverse power dissipation (P_ZSM) is specified per diode, as confirmed in Table 1 and Section 5 of the datasheet. Both diodes can independently withstand 40 W surges for ≤100 µs, provided the common anode thermal path remains within its 100 K/W junction-to-solder-point limit and total package dissipation stays below 300 mW in steady state.