Nexperia USA Inc. BZB84-C3V0,215

Overview

BZB84-C3V0,215 from Nexperia is a dual common-anode Zener diode in SOT23 package, designed for precision voltage regulation and transient suppression in compact DC power rails. It delivers nominal 3.0 V Zener voltage (±5 % tolerance), 600 Ω differential resistance at 5 mA, ≤10 µA reverse current at 1 V, and supports 40 W non-repetitive peak reverse power dissipation for surge protection in automotive and industrial control circuits.

For engineers reviewing the BZB84-C3V0,215 datasheet, BZB84-C3V0,215 pinout, BZB84-C3V0,215 application, or BZB84-C3V0,215 equivalent, this device serves as a space-efficient dual-Zener solution for bidirectional clamping, reference voltage generation, and overvoltage protection where AEC-Q101 qualification and SOT23 mountability are required.

Technical Context

This dual-Zener diode integrates two independent Zener junctions sharing a common anode (Pin 3), enabling symmetrical clamping between either cathode (Pins 1 and 2) and the shared anode. Its ±5 % voltage tolerance (2.8 V to 3.2 V) and low 10 µA IR at VR = 1 V support stable regulation in low-power sensor biasing and I/O protection networks.

The device operates across −55 °C to +150 °C ambient, with thermal resistance Rth(j-a) of 417 K/W and Rth(j-sp) of 100 K/W, ensuring reliable performance under pulsed stress (tp = 100 µs, square wave) and continuous 300 mW total power dissipation at Tamb ≤ 25 °C.

Key Specifications

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package: 3-terminal, small-outline transistor outline with gull-wing leads; footprint compatible with standard reflow and wave soldering per Nexperia's sot023_fr and sot023_fw land patterns.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-Zener regulation applications.

Compared with BZB84-C3V0,215, the BZB84-B3V0,215 offers higher V_Z precision at minor cost premium, while MMBZ5226BS-7-F lacks integrated dual topology and reduces surge robustness due to lower P_ZSM and P_tot.

Availability

BZB84-C3V0,215 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC analog I/O protection, medical sensor biasing, and consumer IoT battery monitoring requiring stable component supply and AEC-Q101 compliance.

Supply support for BZB84-C3V0,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and mobile markets.

The BZB84 series belongs to Nexperia's AEC-Q101-qualified Zener portfolio, engineered specifically for space-constrained voltage regulation and transient suppression in harsh-environment electronics.

FAQ

What is the maximum continuous reverse current the BZB84-C3V0,215 can sustain without degradation?

The device supports up to 200 mA forward current (I_F) continuously, but for Zener operation, the recommended maximum steady-state reverse current is 5 mA - derived from its 300 mW total power limit and 3.0 V nominal V_Z. Exceeding 5 mA risks thermal runaway unless heatsinking or derating is applied per the 417 K/W Rth(j-a) spec.

Can BZB84-C3V0,215 be used for bidirectional ESD protection on a USB data line?

No - while its 40 W P_ZSM handles short pulses, its 600 Ω r_dif and 10 µA I_R are unsuitable for high-speed data lines. USB 2.0 requires sub-0.5 pF capacitance and <1 Ω dynamic resistance; this device exhibits ~450 pF capacitance and is intended for DC/low-frequency regulation, not signal integrity preservation.

How does the common-anode configuration affect circuit implementation versus discrete Zeners?

The common-anode topology forces both Zeners to share the same reference node (Pin 3), enabling clamping between either cathode and that node - ideal for protecting two signals referenced to the same ground. Unlike discrete Zeners, it eliminates separate anode routing, reduces parasitic inductance, and guarantees matched thermal behavior between the two junctions.

Is the 40 W non-repetitive peak power rating per diode or for the entire package?

The 40 W P_ZSM rating applies per diode - meaning each of the two Zener junctions (Pin 1–3 and Pin 2–3) independently sustains 40 W for t_p = 100 µs. Simultaneous conduction on both diodes is not rated; the 300 mW P_tot limit governs continuous combined dissipation.