Nexperia USA Inc. BZB984-C5V6,115

Overview

BZB984-C5V6,115 from Nexperia is a dual Zener voltage regulator diode in SOT663 package with nominal 5.6 V regulation voltage (±5% tolerance), 400 Ω typical differential resistance at I_Z = 5 mA, and 15 μA maximum reverse current at V_R = 4.0 V - used for precision low-power voltage reference and bidirectional ESD clamping in space-constrained sensor interfaces.

For engineers reviewing the BZB984-C5V6,115 datasheet, BZB984-C5V6,115 pinout, BZB984-C5V6,115 application, or BZB984-C5V6,115 equivalent, this device supports dual-cathode common-anode topology for rail-to-rail clamping, requires thermal derating above 25 °C ambient, and must be evaluated against reverse power surge capability (40 W non-repetitive peak) and junction temperature limits (150 °C).

Technical Context

This double Zener diode integrates two independent 5.6 V Zener elements sharing a common anode terminal, enabling symmetrical clamping of positive and negative transients relative to the anode node. Its design targets low-leakage, stable regulation under pulsed loads (tp ≤ 300 μs) and operation across –55 °C to +150 °C ambient.

The device exhibits a positive temperature coefficient of +1.0 mV/K at I_Z = 5 mA, ensuring predictable V_Z drift over temperature, and delivers 425 mW total power dissipation when both diodes are active on FR4 PCB with standard footprint.

Key Specifications

Pinout & Package

Package: SOT663 - ultra-small flat plastic SMD package (1.7 × 1.5 × 0.5 mm), optimized for high-density PCB layouts and reflow soldering only.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-Zener voltage regulation applications.

Compared with DMN2004LKQ-7 and BZX84-C5V6,215, the BZB984-C5V6,115 uniquely integrates two matched 5.6 V Zeners in one SOT663 package with shared anode - reducing component count by 50%, minimizing layout asymmetry, and ensuring identical thermal and electrical behavior between clamping paths.

Availability

BZB984-C5V6,115 is available at Aetrix Electronics and suitable for industrial sensor conditioning, USB port ESD protection, and low-power RTU reference voltage generation requiring stable component supply and long-term obsolescence management.

Supply support for BZB984-C5V6,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance logic, discrete, and MOSFET solutions with focus on efficiency, reliability, and miniaturization for consumer, industrial, and automotive markets.

The BZB984 series belongs to Nexperia's precision Zener regulator portfolio, engineered specifically for space-constrained, low-power systems needing dual-direction voltage control and robust transient immunity in a single ultra-small package.

FAQ

What is the maximum continuous power dissipation for BZB984-C5V6,115 when both diodes are active?

The BZB984-C5V6,115 dissipates up to 425 mW continuously when both Zener diodes are loaded on an FR4 PCB with single-sided copper and standard footprint, as specified in Table 5 of the datasheet. Derating is required above 25 °C ambient temperature per the R_th(j-a) value of 294 K/W.

Can BZB984-C5V6,115 be used for bidirectional ESD protection on a differential signal pair?

Yes - its common-anode dual-cathode configuration allows direct connection across differential lines (e.g., D+/D−), with the CA pin grounded. This provides symmetrical ±5.6 V clamping with matched dynamic impedance and sub-nanosecond response, validated for IEC 61000-4-2 Level 4 compliance.

What is the reverse leakage current specification at 4.0 V for BZB984-C5V6,115?

At V_R = 4.0 V and T_j = 25 °C, the reverse current I_R is guaranteed ≤15 μA, as shown in Table 8 of the datasheet. This low leakage preserves accuracy in high-impedance reference dividers and battery-powered sensor bias networks.

How does the +1.0 mV/K temperature coefficient affect long-term reference stability?

The +1.0 mV/K coefficient means V_Z increases by 1.0 mV per °C rise in junction temperature at 5 mA. Over a –40 °C to +85 °C range, this contributes ±125 mV drift - but combined with ±5% initial tolerance, total variation remains within ±1.2% of 5.6 V when properly heatsinked or thermally stabilized.