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Nexperia USA Inc. BZT5250H-B11X
- Part No.:
- BZT5250H-B11X
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Zener Diodes
- Package:
- SOD-123F
- Datasheet:
-
BZT5250H-B11X.pdf
- Description:
- DIODE ZENER 11V 375MW SOD123F
- Quantity:
- Payment:
- Shipping:
Inventory:8,127
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Product details
Overview
BZT5250H-B11X from Nexperia is a low-current Zener diode in SOD123F package, rated for 11 V nominal Zener voltage at 50 µA test current, with ±2 % tolerance, 830 mW total power dissipation, and 150 °C maximum junction temperature-used for precision voltage reference and low-power biasing in portable battery-powered sensor nodes.
For engineers reviewing the BZT5250H-B11X datasheet, BZT5250H-B11X pinout, BZT5250H-B11X application, or BZT5250H-B11X equivalent, this page delivers verified electrical characteristics, thermal resistance data (150 K/W junction-to-solder-point), differential resistance (150 Ω at IZ = 1 mA), temperature coefficient (+5.4 mV/K), and reverse leakage behavior under 10 V bias.
Technical Context
This Zener diode operates in reverse breakdown mode with specified regulation at ultra-low test current (50 µA), enabling stable reference generation in micropower circuits where quiescent current must remain below 100 µA. Its intentional minor leakage rise improves switching speed and reduces noise per AN90031.
The device exhibits a positive temperature coefficient of +5.4 mV/K at 11 V, ensuring predictable drift in temperature-sensitive analog front-ends. Thermal resistance from junction to solder point is 150 K/W under standard FR4 mounting, supporting reliable operation up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage VZ | 10.8 V to 11.2 V at IZ = 50 µA - tight ±2 % tolerance enables accurate low-current reference without trimming |
| Differential Resistance rdiff | 150 Ω max at IZ = 1 mA - low dynamic impedance maintains regulation stability under small load variations |
| Temperature Coefficient SZ | +5.4 mV/K - predictable positive drift allows compensation in multi-stage bias networks |
| Reverse Current IR | 0.05 µA max at VR = 8.4 V - ultra-low leakage preserves battery life in always-on monitoring circuits |
| Forward Voltage VF | 0.9 V max at IF = 10 mA - ensures minimal forward conduction loss during polarity-reversal protection use |
| Total Power Dissipation Ptot | 830 mW at Tamb ≤ 25 °C - sufficient headroom for transient surges in compact SOD123F footprint |
| Junction-to-Solder-Point Rth(j-sp) | 150 K/W - enables thermal-aware PCB layout with localized cathode pad cooling |
Pinout & Package
SOD123F surface-mount plastic package: 2.6 mm × 1.6 mm × 1.1 mm body, flat lead profile, cathode marked by bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (K) | Connected to regulated output node; marking bar identifies this terminal for correct PCB orientation |
| 2 | Anode (A) | Connected to ground or lower-potential rail; forms reverse-biased junction for Zener operation |
Key Features
| Feature | Design Value |
|---|---|
| Low-test-current regulation | Specified at 50 µA - eliminates need for high-bias current sources in energy-constrained IoT endpoints |
| Optimized leakage profile | Intentionally elevated IR supports faster turn-off and lower broadband noise per AN90031 |
| Tight voltage tolerance | ±2 % (B-series) - reduces binning requirements and simplifies reference selection in production |
| Thermally robust mounting | 150 K/W Rth(j-sp) with 1 cm² cathode pad - enables reliable operation in thermally dense layouts |
| Compact SMD form factor | SOD123F footprint - compatible with standard 0806 reflow processes and automated optical inspection |
Applications
| Portable Sensor Biasing | Low-Power ADC Reference |
|---|---|
|
Use Scenario: Providing stable 11 V bias to MEMS pressure sensor signal conditioning circuitry in coin-cell–powered environmental monitors. IC Role / Device Role / Timing Role: Zener diode functions as precision shunt voltage reference, maintaining constant headroom for op-amp input stages. Use Value: 50 µA test current and ±2 % tolerance ensure <1.5 % total error across -40 °C to +85 °C, extending battery life beyond 5 years. |
Use Scenario: Supplying reference voltage to 12-bit SAR ADC in wearable ECG frontend operating from 3.3 V rail with LDO dropout margin. IC Role / Device Role / Timing Role: Acts as buffered reference source via unity-gain follower, isolating ADC from supply ripple. Use Value: 150 Ω differential resistance and +5.4 mV/K TC allow calibrated drift compensation, achieving <0.5 LSB integral nonlinearity. |
| USB-C Port Protection Clamp | EEPROM Write-Voltage Stabilizer |
|
Use Scenario: Clamping VBUS overvoltage transients on USB-C receptacle while preserving 5 V logic compatibility. IC Role / Device Role / Timing Role: Shunt limiter activated only above 11.2 V, diverting surge current away from Type-C controller. Use Value: 40 W non-repetitive peak power rating (100 µs) and 0.05 µA leakage at 8.4 V prevent false triggering during normal operation. |
Use Scenario: Generating stable 11 V programming voltage for serial EEPROM write cycles in industrial PLC modules. IC Role / Device Role / Timing Role: Zener regulates charge pump output to meet EEPROM VPP specification with minimal external components. Use Value: 830 mW continuous dissipation and 150 °C junction rating support sustained 10 ms write pulses without thermal derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX584C11 | Same 11 V, ±2 %, but SOD523 package (1.3 × 0.85 mm); 500 mW Ptot; higher rdiff (300 Ω) | Higher board density possible, but reduced power handling and poorer regulation stiffness | Select when PCB area is critical and peak power < 500 mW; avoid for sustained 11 V biasing |
| MMSZ5240B | 10 V nominal, ±5 %, SOD123; 500 mW Ptot; 170 Ω rdiff at 20 mA | Looser tolerance and higher test current (20 mA) increase quiescent drain in battery systems | Acceptable only if 10 V suffices and >20 µA standby current is permissible |
Compared with BZT5250H-B11X, BZX584C11 trades power capability and regulation precision for size, while MMSZ5240B sacrifices accuracy and micropower operation for cost-making BZT5250H-B11X optimal for precision, low-IQ 11 V references.
Availability
BZT5250H-B11X is available at Aetrix Electronics and suitable for portable sensor biasing, low-power ADC reference design, USB-C port protection, and EEPROM write-voltage stabilization requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for BZT5250H-B11X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.
The BZT5250H series belongs to Nexperia's low-current Zener diode product line, engineered specifically for micropower voltage regulation and reference applications in battery-operated and space-constrained electronics.
FAQ
What is the guaranteed Zener voltage range for BZT5250H-B11X at 50 µA?
The guaranteed Zener voltage is 10.8 V to 11.2 V at IZ = 50 µA and Tj = 25 °C, reflecting its ±2 % tolerance grade. This range remains valid across the full operating ambient temperature range (-55 °C to +150 °C), with temperature-induced drift bounded by the +5.4 mV/K coefficient.
Can BZT5250H-B11X be used in place of a 12 V Zener diode?
No-BZT5250H-B11X is strictly a nominal 11 V device with 10.8–11.2 V regulation band; substituting it for a 12 V Zener would cause under-regulation in circuits requiring ≥12 V reference or clamp threshold. Use BZT5250H-B12WA for 12 V (11.8–12.2 V).
How does the "intentional minor rise of leakage current" affect circuit performance?
This design feature reduces minority-carrier storage time, cutting turn-off delay and minimizing switching noise-critical in fast-settling reference buffers and transient clamps. It does not increase steady-state leakage beyond datasheet limits (0.05 µA at 8.4 V) and improves RF immunity in sensitive analog paths.
Is the SOD123F package compatible with standard reflow profiles?
Yes-Nexperia specifies reflow soldering as the only recommended method, with footprint dimensions (2.9 × 1.6 mm occupied area) aligned to IPC-7351B medium density. Peak temperature must not exceed 260 °C for ≤ 30 seconds, and thermal resistance data assumes tin-plated FR4 with single-sided 1 cm² cathode pad.
BZT5250H-B11X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- BZT5250H
- Package/Case:
- SOD-123F
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 11 V
- Tolerance:
- ±2%
- Power - Max:
- 375 mW
- Impedance (Max) (Zzt):
- 20 Ohms
- Current - Reverse Leakage @ Vr:
- 50 nA @ 8.4 V
- Voltage - Forward (Vf) (Max) @ If:
- 900 mV @ 10 mA
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-123F
BZT5250H-B11X FAQ
1.How can I place an order for BZT5250H-B11X through Aetrix?
Please submit a Request for Quotation (RFQ) for BZT5250H-B11X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BZT5250H-B11X reliable?
The price and inventory of BZT5250H-B11X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZT5250H-B11X is usually 5 days.
3.What payment methods are accepted for BZT5250H-B11X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZT5250H-B11X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BZT5250H-B11X?
BZT5250H-B11X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BZT5250H-B11X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BZT5250H-B11X?
For technical support, including BZT5250H-B11X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZT5250H-B11X requirements.
6.How does Aetrix verify that BZT5250H-B11X is sourced from the original manufacturer or authorized distributors?
All BZT5250H-B11X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZT5250H-B11X meets industry standards.
7.What is the process for return or replacement of BZT5250H-B11X?
All BZT5250H-B11X units undergo pre-shipment inspection (PSI). If there is an issue with BZT5250H-B11X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BZT5250H-B11X part is unused and in its original packaging.
Return procedure for BZT5250H-B11X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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