Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BZT5250H-B1V8X

Part No.:
BZT5250H-B1V8X
Manufacturer:
Nexperia USA Inc.
Category:
Single Zener Diodes
Package:
SOD-123F
Datasheet:
AetrixBZT5250H-B1V8X.pdf
Description:
DIODE ZENER 1.8V 375MW SOD123F
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,879

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BZT5250H-B1V8X from Nexperia is a low-current Zener diode in SOD123F package, rated for 1.8 V nominal regulation at 50 µA test current, with ±2 % tolerance, 830 mW total power dissipation, and 0.9 V forward voltage at 10 mA - used for precision biasing and voltage reference in portable battery-powered sensor nodes and low-power microcontroller reset circuits.

For engineers reviewing the BZT5250H-B1V8X datasheet, BZT5250H-B1V8X pinout, BZT5250H-B1V8X application, or BZT5250H-B1V8X equivalent, this page delivers verified Zener voltage, thermal resistance, leakage behavior, differential resistance, and SOD123F mounting details essential for low-bias analog design and space-constrained PCB layout.

Technical Context

This Zener operates in reverse breakdown with specified regulation at IZ = 50 µA, enabling stable reference generation under ultra-low quiescent current conditions. Its 1.8 V nominal Zener voltage exhibits a negative temperature coefficient of −3.5 mV/K, ensuring predictable drift across −55 °C to +150 °C ambient range.

The device features intentional minor leakage optimization per AN90031 for fast switching and noise reduction, and its 220 pF capacitance at 0 V reverse bias supports stable operation in high-frequency feedback paths without oscillation risk.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage VZ 1.76 V to 1.84 V at IZ = 50 µA - tight ±2 % tolerance enables accurate low-voltage reference without trimming.
Differential Resistance rdiff 600 Ω max at IZ = 50 µA - ensures stable regulation under light-load variations typical in standby-mode circuits.
Forward Voltage VF 0.9 V max at IF = 10 mA - low conduction loss when used bidirectionally or as clamp diode.
Total Power Dissipation Ptot 830 mW at Tamb ≤ 25 °C with 1 cm² cathode pad - supports moderate power handling on standard FR4 PCBs.
Thermal Resistance Rth(j-sp) 150 K/W junction-to-solder-point - enables reliable thermal coupling to PCB copper for sustained 50 µA operation.
Reverse Current IR 1.0 µA max at VR = 1.0 V - ultra-low leakage preserves battery life in always-on monitoring systems.
Capacitance Cd 220 pF at VR = 0 V, f = 1 MHz - predictable parasitic loading for RC filter and oscillator timing networks.

Pinout & Package

SOD123F surface-mount plastic package: 2.6 mm × 1.6 mm × 1.1 mm body, flat leads, cathode marked by bar.

Pin/Terminal Circuit Role Design Meaning
1 Cathode (K) Connected to regulated output node; marking bar identifies this terminal for correct PCB orientation and polarity-sensitive placement.
2 Anode (A) Connected to ground or lower-potential rail; forms reverse-biased junction for Zener action during regulation.

Key Features

Feature Design Value
Low-test-current specification Regulation defined at IZ = 50 µA - matches quiescent current budgets of energy-harvesting and coin-cell systems.
Optimized leakage profile Intentional minor rise per AN90031 - reduces switching transients and broadband noise in precision analog front-ends.
Tight voltage tolerance ±2 % (B-series) - eliminates need for post-layout calibration in factory-programmed IoT sensor modules.
Small-form-factor SMD SOD123F footprint - fits 1.2 mm pitch routing in wearables and medical patch devices with strict board area limits.
High-temperature operation Rated to Tj = 150 °C - supports deployment in enclosed industrial enclosures without derating.

Applications

Portable Sensor Biasing Microcontroller Reset Reference

Use Scenario: Providing stable 1.8 V reference to analog front-end of BLE-enabled environmental sensor node powered by CR2032.

IC Role / Device Role / Timing Role: Zener diode operating in reverse breakdown to generate fixed bias point for op-amp input stage and ADC reference divider.

Use Value: 50 µA test current aligns with node's 2.5 µA sleep-mode budget; ±2 % tolerance ensures <0.5 % system-level measurement error.

Use Scenario: Generating clean, low-noise reset threshold for ARM Cortex-M0+ MCU in battery-backed smart meter.

IC Role / Device Role / Timing Role: Voltage reference element in RC-reset circuit, where Zener clamps capacitor discharge to precise 1.8 V trip point.

Use Value: Optimized leakage behavior minimizes false resets during brown-out; 220 pF capacitance stabilizes timing without external compensation.

Low-Power LDO Feedback Divider ESD-Sensitive Signal Clamping

Use Scenario: Setting output voltage of 3.3 V low-quiescent LDO via resistive divider anchored to 1.8 V Zener reference.

IC Role / Device Role / Timing Role: Precision shunt reference replacing higher-current bandgap ICs to reduce idle power in always-on subsystems.

Use Value: 600 Ω differential resistance maintains regulation accuracy despite load-induced divider current variation up to ±10 %.

Use Scenario: Protecting 1.8 V I²C bus lines in handheld diagnostic tool against ESD events while preserving signal integrity.

IC Role / Device Role / Timing Role: Low-capacitance shunt clamp placed between data line and ground, activated only above 1.8 V breakdown threshold.

Use Value: 220 pF capacitance avoids signal edge degradation at 400 kHz bus speed; 0.9 V forward drop enables bidirectional clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
BZX384-B1V8 Same 1.8 V, ±2 %, but SOD323 package (1.3 × 0.8 mm); 500 mW Ptot; 300 Ω rdiff at 5 mA Higher power density but lower thermal mass; less suitable for sustained 50 µA bias due to tighter thermal constraints Select for ultra-dense layouts where board area < 1.0 mm² is critical and average power remains < 150 mW
MMSZ4678 1.8 V, ±5 %, SOD123 package; 500 mW Ptot; 1000 Ω rdiff at 50 µA; no leakage optimization Looser tolerance increases system calibration burden; higher rdiff degrades regulation under source impedance variation Select only for cost-sensitive consumer products where ±5 % reference accuracy is acceptable and noise immunity is secondary

Compared with BZX384-B1V8, BZT5250H-B1V8X offers superior thermal robustness and lower leakage-induced noise; compared with MMSZ4678, it delivers tighter regulation and documented fast-switching optimization - making it preferred for precision, low-power, and noise-sensitive designs.

Availability

BZT5250H-B1V8X is available at Aetrix Electronics and suitable for portable sensor biasing, microcontroller reset reference, and low-power LDO feedback divider applications requiring stable component supply, consistent Zener voltage matching, and long-term traceability in high-mix production.

Supply support for BZT5250H-B1V8X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

The BZT5250H series belongs to Nexperia's low-current Zener portfolio, designed specifically for battery-powered and energy-constrained systems needing stable voltage references at microampere bias levels.

FAQ

What is the maximum reverse voltage before breakdown for BZT5250H-B1V8X?

The nominal Zener voltage is 1.8 V with a guaranteed range of 1.76 V to 1.84 V at IZ = 50 µA. Breakdown begins within this window; operation below 1.76 V ensures non-conductive state. The absolute maximum reverse voltage is not specified beyond the 1.8 V regulation band, and exceeding 1.84 V risks uncontrolled current rise without external current limiting.

Can BZT5250H-B1V8X be used in forward conduction mode?

Yes - it exhibits 0.9 V forward voltage at 10 mA, making it suitable as a low-drop clamp or level-shifter. However, its primary design intent is reverse-bias Zener regulation; forward characteristics are secondary and not optimized for continuous conduction. Use in forward mode is limited to transient clamping or low-duty-cycle signaling.

How does the "B" suffix differ from "C" in the BZT5250H series?

The "B" suffix denotes ±2 % Zener voltage tolerance (e.g., BZT5250H-B1V8X), while "C" indicates approximately ±5 % tolerance (e.g., BZT5250H-C1V8). Both share identical package, thermal specs, and leakage optimization, but "B" parts are selected for tighter regulation required in precision analog and metrology applications.

Is BZT5250H-B1V8X suitable for automotive applications?

No - this part is not AEC-Q200 qualified or automotive-graded. Nexperia explicitly states in its legal disclaimers that non-automotive qualified products like BZT5250H-B1V8X are unsuitable for safety-critical or life-support systems. It is intended for industrial, consumer, and portable electronics where extended temperature operation (−55 °C to +150 °C) is needed without automotive qualification.

BZT5250H-B1V8X Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
BZT5250H
Package/Case:
SOD-123F
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
1.8 V
Tolerance:
±2%
Power - Max:
375 mW
Impedance (Max) (Zzt):
100 Ohms
Current - Reverse Leakage @ Vr:
7.5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If:
900 mV @ 10 mA
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-123F

BZT5250H-B1V8X FAQ

1.How can I place an order for BZT5250H-B1V8X through Aetrix?

Please submit a Request for Quotation (RFQ) for BZT5250H-B1V8X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BZT5250H-B1V8X reliable?

The price and inventory of BZT5250H-B1V8X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZT5250H-B1V8X is usually 5 days.

3.What payment methods are accepted for BZT5250H-B1V8X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZT5250H-B1V8X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BZT5250H-B1V8X?

BZT5250H-B1V8X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BZT5250H-B1V8X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BZT5250H-B1V8X?

For technical support, including BZT5250H-B1V8X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZT5250H-B1V8X requirements.

6.How does Aetrix verify that BZT5250H-B1V8X is sourced from the original manufacturer or authorized distributors?

All BZT5250H-B1V8X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZT5250H-B1V8X meets industry standards.

7.What is the process for return or replacement of BZT5250H-B1V8X?

All BZT5250H-B1V8X units undergo pre-shipment inspection (PSI). If there is an issue with BZT5250H-B1V8X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BZT5250H-B1V8X part is unused and in its original packaging.

Return procedure for BZT5250H-B1V8X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BZT5250H-B1V8X Tags

  • BZT5250H-B1V8X
  • BZT5250H-B1V8X PDF
  • BZT5250H-B1V8X Datasheet
  • BZT5250H-B1V8X Specifications
  • BZT5250H-B1V8X Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BZT5250H-B1V8X
  • Buy BZT5250H-B1V8X
  • BZT5250H-B1V8X Price
  • BZT5250H-B1V8X Distributor
  • BZT5250H-B1V8X Supplier
  • BZT5250H-B1V8X Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER