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Nexperia USA Inc. BZT5250H-B3V0-QX

Part No.:
BZT5250H-B3V0-QX
Manufacturer:
Nexperia USA Inc.
Category:
Single Zener Diodes
Package:
SOD-123F
Datasheet:
AetrixBZT5250H-B3V0-QX.pdf
Description:
DIODE ZENER 3V 375MW SOD123F
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,688

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Product details

Overview

BZT5250H-B3V0-Q from Nexperia is a low-current Zener diode in SOD123F package, rated for 3.0 V nominal Zener voltage at 50 µA test current, with ±2 % tolerance, 830 mW total power dissipation, and AEC-Q101 qualification for automotive use. It serves as a precision voltage reference or regulator in low-bias circuits such as battery monitoring, sensor biasing, and microcontroller reset supervision.

For engineers reviewing the BZT5250H-B3V0-Q datasheet, BZT5250H-B3V0-Q pinout, BZT5250H-B3V0-Q application, or BZT5250H-B3V0-Q equivalent, key selection criteria include its 3.0 V Zener voltage tolerance, low 50 µA test current suitability for ultra-low-power designs, cathode/anode polarity marking, thermal resistance (150 K/W junction-to-solder point), and automotive-grade reliability under ambient temperatures from −55 °C to +150 °C.

Technical Context

This Zener diode operates in reverse breakdown mode with a specified Zener voltage of 2.94 V to 3.06 V at IZ = 50 µA, exhibiting differential resistance ≤600 Ω at that current and ≤100 Ω at 5 mA. Its temperature coefficient is −3.5 mV/K, indicating predictable negative drift over temperature.

The device features intentional leakage current optimization per AN90031 for fast switching and noise reduction, and is mounted on FR4 PCB with tin-plated single-sided copper - cathode pad area defined as 1 cm² for thermal derating compliance up to 830 mW at Tamb ≤ 25 °C.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 2.94 V to 3.06 V at IZ = 50 µA - ensures stable 3.0 V reference under ultra-low bias conditions typical in coin-cell or energy-harvesting systems.
Tolerance ±2 % - enables precise voltage clamping without post-production trimming in safety-critical automotive subsystems.
Differential Resistance (rdiff) ≤600 Ω at 50 µA; ≤100 Ω at 5 mA - defines regulation stiffness: lower values improve load regulation in varying current conditions.
Total Power Dissipation (Ptot) 830 mW at Tamb ≤ 25 °C on specified FR4 layout - sets maximum continuous power handling before thermal derating applies.
Forward Voltage (VF) ≤0.9 V at IF = 10 mA - confirms low conduction loss when used bidirectionally or in protection configurations.
Junction Temperature (Tj) −55 °C to +150 °C - supports operation in under-hood automotive environments and industrial edge nodes.
AEC-Q101 Qualified Yes - validated for automotive discrete semiconductor stress testing including HTGB, HTRB, and temperature cycling.

Pinout & Package

SOD123F surface-mount plastic package: 2.6 mm × 1.6 mm × 1.1 mm body, flat lead profile, cathode marked by bar on top surface.

Pin/Terminal Circuit Role Design Meaning
1 Cathode (K) Connected to regulated output node; marking bar identifies this terminal - critical for correct orientation during automated placement and reverse-voltage protection design.
2 Anode (A) Connected to ground or current-limiting resistor; polarity must be observed to ensure Zener breakdown conduction rather than forward conduction.

Key Features

Feature Design Value
Low test current operation Specified at 50 µA - enables use in µA-level standby circuits without compromising regulation accuracy.
Optimized leakage profile Intentional minor rise per AN90031 - reduces switching transients and high-frequency noise in feedback paths of LDOs or ADC references.
Automotive qualification AEC-Q101 compliant - meets stress-test requirements for HTGB, HTRB, ESD, and mechanical shock in automotive ECUs and ADAS sensors.
Thermal performance Rth(j-sp) = 150 K/W - allows accurate thermal modeling when soldered to 1 cm² cathode pad, supporting reliable derating above 25 °C ambient.

Applications

Automotive Cabin Sensors Industrial IoT Node Biasing

Use Scenario: Voltage reference for MEMS pressure and humidity sensors in HVAC control modules.

IC Role / Device Role / Timing Role: Zener diode provides stable 3.0 V bias to analog front-end op-amps and ADC reference inputs.

Use Value: ±2 % tolerance and −3.5 mV/K TC ensure <±15 mV drift across −40 °C to +85 °C, meeting ASIL-B sensor accuracy requirements.

Use Scenario: Low-power voltage clamp for LoRaWAN node microcontroller I/O protection.

IC Role / Device Role / Timing Role: Reverse-biased Zener shunts transient surges while maintaining 3.0 V logic-level compatibility.

Use Value: 50 µA test current enables direct connection to 100 kΩ pull-up networks without loading, preserving battery life in 10-year deployments.

Medical Wearable Battery Monitoring Consumer Smart Home Reset Circuit

Use Scenario: Precision voltage threshold detection for lithium coin-cell state-of-charge estimation.

IC Role / Device Role / Timing Role: Zener diode feeds comparator input to trigger low-battery alert at 2.95 V.

Use Value: Tight 2.94–3.06 V window eliminates need for external trimming resistors, reducing BOM count and calibration steps.

Use Scenario: Brown-out reset generator for Wi-Fi SoC in smart lighting controllers.

IC Role / Device Role / Timing Role: Provides clean 3.0 V reference to reset supervisor IC during AC/DC converter startup.

Use Value: 830 mW Ptot rating accommodates brief inrush currents without thermal runaway, ensuring robust first-power-on behavior.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
BZX84-C3V0 Same 3.0 V nominal, ±5 % tolerance, SOT23 package, 350 mW Ptot Limited to non-automotive consumer use; lacks AEC-Q101 qualification and low-IZ optimization Select only for cost-sensitive, non-automotive applications where ±5 % tolerance and lower power handling are acceptable.
MMSZ5226B 3.0 V nominal, ±5 %, SOD-123 package, 500 mW Ptot, no AEC-Q101 Higher rdiff (150 Ω min at 20 mA) and no intentional leakage tuning for noise reduction Prefer for legacy designs requiring second-source availability, but verify thermal margin and noise sensitivity in new automotive designs.

Compared with BZT5250H-B3V0-Q, both alternatives offer wider tolerance and lower power ratings, lack AEC-Q101 validation, and do not support the same low-current precision or noise-optimized leakage behavior - making them unsuitable for new automotive or ultra-low-power designs requiring tight regulation at microampere bias.

Availability

BZT5250H-B3V0-Q is available at Aetrix Electronics and suitable for automotive cabin sensors, industrial IoT node biasing, medical wearable battery monitoring, and consumer smart home reset circuits requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for BZT5250H-B3V0-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert headquartered in Nijmegen, Netherlands, specializing in high-performance, high-reliability discrete and logic devices for automotive, industrial, and mobile markets.

The BZT5250H-Q series belongs to Nexperia's AEC-Q101-qualified Zener diode product line, engineered specifically for low-current, high-stability voltage regulation in automotive electronics and portable battery-powered systems.

FAQ

What is the maximum reverse current (IR) at VR = 2.5 V for BZT5250H-B3V0-Q?

At VR = 2.5 V and Tj = 25 °C, the reverse current is ≤0.8 µA. This value is confirmed in Table 8 of the datasheet for the B-series 3.0 V variant, reflecting its tight leakage control optimized for low-power sensing and reference applications.

Can BZT5250H-B3V0-Q be used in place of a standard 3.3 V Zener diode?

No - BZT5250H-B3V0-Q is strictly rated for 3.0 V nominal Zener voltage (2.94–3.06 V). Substituting it for a 3.3 V part would result in undershoot of the target regulation voltage by ~0.3 V, potentially causing logic-level incompatibility or premature brown-out triggering in microcontroller systems.

Is reflow soldering the only recommended assembly method?

Yes - the datasheet explicitly states "reflow soldering is the only recommended soldering method" for the SOD123F package. Wave or hand soldering risks thermal damage due to the device's low thermal mass and strict peak temperature limits (260 °C max for 10 s).

How does the −3.5 mV/K temperature coefficient affect circuit performance over temperature?

Over a −40 °C to +125 °C range, the Zener voltage shifts by approximately −575 mV, resulting in a final VZ ≈ 2.43 V at +125 °C. Designers must account for this linear drift in precision references - e.g., by using temperature-compensated feedback or selecting higher-VZ variants with positive TC for cancellation.

BZT5250H-B3V0-QX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
BZT5250H-Q
Package/Case:
SOD-123F
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
3 V
Tolerance:
±2%
Power - Max:
375 mW
Impedance (Max) (Zzt):
100 Ohms
Current - Reverse Leakage @ Vr:
800 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If:
900 mV @ 10 mA
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-123F

BZT5250H-B3V0-QX FAQ

1.How can I place an order for BZT5250H-B3V0-QX through Aetrix?

Please submit a Request for Quotation (RFQ) for BZT5250H-B3V0-QX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BZT5250H-B3V0-QX reliable?

The price and inventory of BZT5250H-B3V0-QX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZT5250H-B3V0-QX is usually 5 days.

3.What payment methods are accepted for BZT5250H-B3V0-QX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZT5250H-B3V0-QX transactions.

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4.How is shipping managed for BZT5250H-B3V0-QX?

BZT5250H-B3V0-QX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BZT5250H-B3V0-QX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BZT5250H-B3V0-QX?

For technical support, including BZT5250H-B3V0-QX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZT5250H-B3V0-QX requirements.

6.How does Aetrix verify that BZT5250H-B3V0-QX is sourced from the original manufacturer or authorized distributors?

All BZT5250H-B3V0-QX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZT5250H-B3V0-QX meets industry standards.

7.What is the process for return or replacement of BZT5250H-B3V0-QX?

All BZT5250H-B3V0-QX units undergo pre-shipment inspection (PSI). If there is an issue with BZT5250H-B3V0-QX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BZT5250H-B3V0-QX part is unused and in its original packaging.

Return procedure for BZT5250H-B3V0-QX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BZT5250H-B3V0-QX Tags

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