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Nexperia USA Inc. BZT5250H-B3V3X
- Part No.:
- BZT5250H-B3V3X
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Zener Diodes
- Package:
- SOD-123F
- Datasheet:
-
BZT5250H-B3V3X.pdf
- Description:
- DIODE ZENER 3.3V 375MW SOD123F
- Quantity:
- Payment:
- Shipping:
Inventory:5,306
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Product details
Overview
BZT5250H-B3V3X from Nexperia is a low-current Zener diode in SOD123F package, designed for precision voltage regulation at 3.3 V nominal with ±2 % tolerance, specified at 50 µA test current, and rated for 830 mW total power dissipation. It serves as a stable reference or clamp in battery-powered sensor interfaces, microcontroller reset circuits, and low-power analog signal conditioning.
For engineers reviewing the BZT5250H-B3V3X datasheet, BZT5250H-B3V3X pinout, BZT5250H-B3V3X application, or BZT5250H-B3V3X equivalent, key selection criteria include its 3.3 V Zener voltage at 50 µA, 160 Ω differential resistance at 5 mA, -3.5 mV/K temperature coefficient, 160 pF capacitance at 0 V, and cathode/anode polarity marking on SOD123F body.
Technical Context
This Zener diode operates in reverse breakdown to maintain a stable 3.3 V reference under low-bias conditions (IZ = 50 µA), with a typical differential resistance of 160 Ω at 5 mA, enabling tight regulation in high-impedance bias networks. Its negative temperature coefficient (-3.5 mV/K) ensures predictable drift behavior across industrial temperature ranges (-55 °C to +150 °C).
The device uses an optimized silicon junction structure that intentionally elevates leakage current slightly-per AN90031-to improve switching speed and reduce noise in signal-clamping applications. Mounting on FR4 PCB with 1 cm² cathode pad yields 70 K/W junction-to-solder-point thermal resistance, supporting reliable operation at up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 3.23 V to 3.37 V at IZ = 50 µA - defines precise regulation point for low-current bias networks |
| Differential Resistance (rdiff) | 160 Ω max at IZ = 5 mA - determines regulation stiffness and output impedance in reference circuits |
| Temperature Coefficient (SZ) | -3.5 mV/K - quantifies voltage drift per degree Celsius, critical for temperature-stable references |
| Diode Capacitance (Cd) | 160 pF at VR = 0 V, f = 1 MHz - impacts high-frequency noise filtering and AC coupling performance |
| Forward Voltage (VF) | 0.9 V max at IF = 10 mA - defines conduction threshold when used in forward-biased protection paths |
| Total Power Dissipation (Ptot) | 830 mW at Tamb ≤ 25 °C with 1 cm² cathode pad - sets maximum steady-state thermal load in PCB layout |
| Reverse Current (IR) | 1.5 µA max at VR = 3.3 V - indicates leakage level affecting standby power in battery-critical designs |
Pinout & Package
SOD123F surface-mount plastic package: 2.6 mm × 1.6 mm × 1.1 mm body, flat lead profile, cathode marked by bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (K) | Connected to regulated output node; marking bar identifies this terminal; carries reverse breakdown current |
| 2 | Anode (A) | Connected to ground or lower-potential rail; completes reverse-bias path during Zener operation |
Key Features
| Feature | Design Value |
|---|---|
| Low test current specification | Rated at 50 µA - enables use in nanoampere-bias circuits without compromising regulation accuracy |
| Tight voltage tolerance | ±2 % (B-series) - reduces component count in precision reference designs requiring minimal post-calibration |
| Optimized leakage profile | Intentionally elevated IR per AN90031 - improves transient response and suppresses high-frequency noise in clamping roles |
| Thermal robustness | 150 °C max junction temperature - supports operation in sealed enclosures or near heat-generating components |
| Surface-mount compatibility | SOD123F footprint - allows automated placement and reflow soldering with standard 0805-equivalent land pattern |
Applications
| Microcontroller Reset Circuit | Portable Sensor Bias Network |
|---|---|
Use Scenario: Provides clean 3.3 V reset threshold for ARM Cortex-M0+ MCUs in wearables. IC Role / Device Role / Timing Role: Zener acts as voltage comparator input reference for integrated POR circuitry. Use Value: Low 50 µA test current minimizes quiescent drain on coin-cell batteries; ±2 % tolerance ensures deterministic reset assertion across temperature. |
Use Scenario: Supplies stable bias to MEMS accelerometer analog front-end in Bluetooth LE beacons. IC Role / Device Role / Timing Role: Functions as low-drift DC reference for op-amp gain-setting network. Use Value: -3.5 mV/K temperature coefficient counterbalances typical op-amp offset drift, improving long-term measurement stability. |
| USB-C Port ESD Clamp | Industrial Signal Level Shifter |
Use Scenario: Protects 3.3 V USB-C CC line against contact discharge in docking stations. IC Role / Device Role / Timing Role: Reverse-biased Zener clamps transients above 3.3 V while presenting <160 pF capacitance. Use Value: 160 pF capacitance avoids signal integrity degradation on 10 Mbps CC communication lines; fast turn-on limits overshoot to <5 V. |
Use Scenario: Translates 5 V logic signals to 3.3 V domain in PLC I/O modules using resistor-divider + Zener topology. IC Role / Device Role / Timing Role: Shunt regulator holds divider output at precise 3.3 V despite supply ripple. Use Value: 160 Ω differential resistance maintains regulation within ±15 mV over 1–10 mA load variation, ensuring reliable logic-level translation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBZ5226BS-7-F | 3.3 V, ±5 % tolerance, 200 mW Ptot, SOT-23 package | Higher power rating but looser tolerance; larger footprint requires board redesign | Choose when higher surge immunity is needed and ±5 % regulation error is acceptable |
| BZX384-B3V3 | 3.3 V, ±2 %, 300 mW Ptot, SOD-323 package, 90 Ω rdiff | Lower power rating and smaller size; tighter rdiff improves regulation but reduces thermal margin | Choose for space-constrained layouts where 300 mW thermal limit suffices and lower impedance is prioritized |
Compared with BZT5250H-B3V3X, MMBZ5226BS-7-F trades precision for ruggedness and BZX384-B3V3 trades thermal headroom for compactness-making the BZT5250H-B3V3X optimal for balanced performance in battery-powered industrial sensors.
Availability
BZT5250H-B3V3X is available at Aetrix Electronics and suitable for portable medical monitors, IoT edge nodes, and industrial control panels requiring stable component supply with guaranteed long-term continuity.
Supply support for BZT5250H-B3V3X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, headquartered in Nijmegen, Netherlands.
The BZT5250H series belongs to Nexperia's low-current Zener portfolio, engineered specifically for ultra-low-power voltage reference and clamping in battery-operated and space-constrained systems.
FAQ
What is the exact Zener voltage range for BZT5250H-B3V3X at 50 µA?
The BZT5250H-B3V3X has a guaranteed Zener voltage range of 3.23 V to 3.37 V when tested at IZ = 50 µA and Tj = 25 °C, per Table 8 of the official Nexperia datasheet Rev. 1 (18 July 2024). This ±2 % tolerance is measured under strictly controlled low-current conditions to ensure repeatability in precision bias applications.
Can BZT5250H-B3V3X be used in forward conduction mode?
Yes - it exhibits a maximum forward voltage of 0.9 V at IF = 10 mA, making it suitable for low-drop protection diodes or polarity-sensitive input stages. However, its primary design intent and characterization are for reverse-bias Zener operation; forward characteristics are secondary and not optimized for continuous conduction.
How does the intentional leakage increase affect circuit performance?
Per Application Note AN90031, the controlled rise in leakage current improves switching speed and reduces high-frequency noise during transient clamping. In practice, this means faster response to ESD events and lower jitter in reference outputs-without increasing static power draw beyond 1.5 µA at 3.3 V reverse bias.
What is the recommended PCB pad layout for thermal reliability?
Nexperia specifies a 1 cm² copper pad for the cathode terminal to achieve the 830 mW power rating. The recommended reflow footprint (Fig. 10) uses 1.2 mm × 1.1 mm solder lands for each terminal, with 2.9 mm × 1.6 mm occupied area - matching standard SOD123F land patterns used by Digi-Key and Mouser for verified thermal performance.
BZT5250H-B3V3X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- BZT5250H
- Package/Case:
- SOD-123F
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 3.3 V
- Tolerance:
- ±2%
- Power - Max:
- 375 mW
- Impedance (Max) (Zzt):
- 100 Ohms
- Current - Reverse Leakage @ Vr:
- 7.5 µA @ 1.5 V
- Voltage - Forward (Vf) (Max) @ If:
- 900 mV @ 10 mA
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-123F
BZT5250H-B3V3X FAQ
1.How can I place an order for BZT5250H-B3V3X through Aetrix?
Please submit a Request for Quotation (RFQ) for BZT5250H-B3V3X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BZT5250H-B3V3X reliable?
The price and inventory of BZT5250H-B3V3X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZT5250H-B3V3X is usually 5 days.
3.What payment methods are accepted for BZT5250H-B3V3X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZT5250H-B3V3X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BZT5250H-B3V3X?
BZT5250H-B3V3X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BZT5250H-B3V3X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BZT5250H-B3V3X?
For technical support, including BZT5250H-B3V3X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZT5250H-B3V3X requirements.
6.How does Aetrix verify that BZT5250H-B3V3X is sourced from the original manufacturer or authorized distributors?
All BZT5250H-B3V3X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZT5250H-B3V3X meets industry standards.
7.What is the process for return or replacement of BZT5250H-B3V3X?
All BZT5250H-B3V3X units undergo pre-shipment inspection (PSI). If there is an issue with BZT5250H-B3V3X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BZT5250H-B3V3X part is unused and in its original packaging.
Return procedure for BZT5250H-B3V3X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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