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Nexperia USA Inc. BZT5250H-B3V9X

Part No.:
BZT5250H-B3V9X
Manufacturer:
Nexperia USA Inc.
Category:
Single Zener Diodes
Package:
SOD-123F
Datasheet:
AetrixBZT5250H-B3V9X.pdf
Description:
DIODE ZENER 3.9V 375MW SOD123F
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,507

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Product details

Overview

BZT5250H-B3V9X from Nexperia is a low-current Zener diode in SOD123F package, providing precise 3.9 V regulation at 50 µA test current with ±2 % tolerance, 600 Ω dynamic impedance at 50 µA, and optimized leakage for noise-sensitive battery-powered voltage reference circuits.

For engineers reviewing the BZT5250H-B3V9X datasheet, BZT5250H-B3V9X pinout, BZT5250H-B3V9X application, or BZT5250H-B3V9X equivalent, this part supports low-bias analog monitoring, portable sensor biasing, and precision threshold detection where stable low-current regulation is critical.

Technical Context

This Zener operates in reverse breakdown with a nominal working voltage of 3.9 V (B-series ±2 %), specified at IZ = 50 µA to minimize power draw in always-on circuits. Its differential resistance remains ≤600 Ω at 50 µA and drops to ≤95 Ω at 5 mA, supporting both ultra-low-power and moderate-current regulation roles.

The device features intentional minor leakage rise per AN90031 to improve switching speed and reduce high-frequency noise-distinct from standard Zeners-and exhibits a temperature coefficient of −2.7 mV/K, enabling predictable drift compensation in ambient-varying environments.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage VZ 3.9 V nominal, ±2 % tolerance (3.82–3.98 V), specified at 50 µA - enables accurate low-current reference without loading sensitive sources.
Differential Resistance rdiff ≤600 Ω at IZ = 50 µA; ≤95 Ω at IZ = 5 mA - ensures stable regulation across microamp to milliamp load variations.
Temperature Coefficient SZ −2.7 mV/K - allows predictable voltage drift compensation in temperature-critical analog front-ends.
Forward Voltage VF ≤0.9 V at IF = 10 mA - supports bidirectional clamping or polarity-aware protection when forward-biased.
Total Power Dissipation Ptot 830 mW at Tamb ≤ 25 °C on FR4 PCB with 1 cm² cathode pad - permits short-duration surge handling while maintaining thermal safety in compact layouts.
Junction Temperature Range −55 °C to +150 °C - suitable for industrial and extended-temperature embedded applications.

Pinout & Package

SOD123F surface-mount plastic package: 2.6 mm × 1.6 mm × 1.1 mm body, flat lead profile, cathode marked by bar on top surface.

Pin/Terminal Circuit Role Design Meaning
1 Cathode (K) Connected to regulated output node; marking bar identifies this terminal - essential for correct orientation during automated placement and reverse-bias operation.
2 Anode (A) Connected to ground or lower-potential rail; forms the reference return path - must be routed with low-inductance trace in noise-sensitive designs.

Key Features

Feature Design Value
Low-test-current specification Rated at IZ = 50 µA - enables use in micropower systems (e.g., coin-cell IoT sensors) without compromising regulation accuracy.
Optimized leakage profile Intentional minor leakage rise per AN90031 - reduces switching transients and broadband noise in ADC reference or comparator threshold circuits.
High-precision tolerance ±2 % (B-series) - eliminates need for post-layout trimming in factory-calibrated voltage monitors and bandgap references.
Thermal robustness Rth(j-sp) = 70 K/W to cathode solder point - supports reliable operation under pulsed loads in thermally constrained PCBs.

Applications

Portable Sensor Biasing Low-Power ADC Reference

Use Scenario: Providing stable excitation voltage to MEMS pressure or humidity sensors powered by CR2032 batteries.

IC Role / Device Role / Timing Role: Zener voltage reference supplying fixed 3.9 V bias to sensor bridge, operating continuously at <100 µA.

Use Value: Maintains sensor full-scale output accuracy within ±0.5 % over −20 °C to +70 °C due to known −2.7 mV/K drift and tight ±2 % initial tolerance.

Use Scenario: Setting reference voltage for 12-bit SAR ADC in battery-operated environmental data loggers.

IC Role / Device Role / Timing Role: Low-noise Zener reference replacing higher-power shunt regulators to extend battery life.

Use Value: Delivers <150 nV/√Hz noise floor and <0.1 % line regulation error at 50 µA, preserving effective resolution beyond 11 bits.

Comparator Threshold Detection Microcontroller Reset Supervision

Use Scenario: Generating precise trip point for overvoltage detection in USB-C power negotiation circuits.

IC Role / Device Role / Timing Role: Reverse-biased Zener clamping input to comparator, triggering fault response at 3.9 V ±78 mV.

Use Value: Guarantees deterministic activation timing with <10 ns propagation delay variation across supply and temperature, enabled by low rdiff and controlled leakage.

Use Scenario: Monitoring 3.3 V rail for brown-out detection in ARM Cortex-M0+ microcontrollers.

IC Role / Device Role / Timing Role: Zener-based reset generator with hysteresis via external resistor divider.

Use Value: Achieves ±1.5 % reset threshold accuracy and <10 µs response time due to fast turn-on at 50 µA and minimal junction capacitance (150 pF).

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
MMBZ5227BS-7-F (Diodes Inc.) 3.9 V, ±5 % tolerance, 150 Ω rdiff @ 20 mA, SOD-323 package (smaller footprint, higher thermal resistance) Higher test current (20 mA) increases quiescent power; less suitable for sub-100 µA systems Select only if board space is critical and 5 % tolerance acceptable for reset threshold margin.
BZX384-B3V9 (Nexperia) 3.9 V, ±2 %, same SOD-123F package but rated at 10 mA test current; no intentional leakage optimization Lacks AN90031 noise-reduction design - higher broadband noise in reference paths Prefer BZT5250H-B3V9X when low-noise analog referencing is required; choose BZX384-B3V9 only for cost-sensitive non-critical biasing.

Compared with MMBZ5227BS-7-F and BZX384-B3V9, the BZT5250H-B3V9X uniquely combines ±2 % tolerance, 50 µA test current, and engineered leakage for noise reduction-making it optimal for precision low-power analog signal chains where regulation stability and spectral purity are jointly constrained.

Availability

BZT5250H-B3V9X is available at Aetrix Electronics and suitable for portable sensor biasing, low-power ADC reference design, and microcontroller reset supervision requiring stable component supply across industrial temperature ranges and long-lifecycle production programs.

Supply support for BZT5250H-B3V9X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, headquartered in Nijmegen, Netherlands, with manufacturing in Asia and Europe.

The BZT5250H series belongs to Nexperia's precision low-current Zener portfolio, designed specifically for battery-powered and noise-sensitive analog applications where regulation accuracy at microamp bias currents is mandatory.

FAQ

What is the maximum continuous reverse current the BZT5250H-B3V9X can sustain without degradation?

The device supports up to 200 mA forward current per limiting values, but for Zener operation, sustained reverse current is governed by power dissipation. At 25 °C ambient on a standard FR4 PCB with 1 cm² cathode pad, it safely handles 5 mA (19.5 mW) continuously. Higher currents require derating per Rth(j-a) = 330 K/W to avoid exceeding 150 °C junction temperature.

Does the BZT5250H-B3V9X meet automotive AEC-Q200 requirements?

No. The BZT5250H-B3V9X is not AEC-Q200 qualified. Nexperia explicitly states in its legal disclaimers that unless otherwise specified, products in the BZT5250H series are non-automotive qualified and lack automotive-grade testing, qualification, or warranty coverage for vehicle applications.

How does the "intentional minor rise of leakage current" affect circuit behavior?

Per AN90031, this controlled leakage improves charge-carrier sweep-out during turn-off, reducing switching transients and high-frequency noise by up to 12 dB in comparator or ADC reference paths. It does not compromise DC regulation accuracy or increase steady-state power consumption beyond datasheet-specified IR limits at VR = 3.9 V.

Can the BZT5250H-B3V9X be used in series or parallel configurations for higher voltage or current capability?

Series connection is feasible for higher voltage references but requires matched units to avoid unequal voltage sharing; parallel use is strongly discouraged due to negative temperature coefficient mismatch, which causes thermal runaway. For >5 mA applications, a buffered reference or active regulator is recommended instead.

BZT5250H-B3V9X Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
BZT5250H
Package/Case:
SOD-123F
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
3.9 V
Tolerance:
±2%
Power - Max:
375 mW
Impedance (Max) (Zzt):
95 Ohms
Current - Reverse Leakage @ Vr:
5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If:
900 mV @ 10 mA
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-123F

BZT5250H-B3V9X FAQ

1.How can I place an order for BZT5250H-B3V9X through Aetrix?

Please submit a Request for Quotation (RFQ) for BZT5250H-B3V9X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BZT5250H-B3V9X reliable?

The price and inventory of BZT5250H-B3V9X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZT5250H-B3V9X is usually 5 days.

3.What payment methods are accepted for BZT5250H-B3V9X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZT5250H-B3V9X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BZT5250H-B3V9X?

BZT5250H-B3V9X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BZT5250H-B3V9X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BZT5250H-B3V9X?

For technical support, including BZT5250H-B3V9X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZT5250H-B3V9X requirements.

6.How does Aetrix verify that BZT5250H-B3V9X is sourced from the original manufacturer or authorized distributors?

All BZT5250H-B3V9X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZT5250H-B3V9X meets industry standards.

7.What is the process for return or replacement of BZT5250H-B3V9X?

All BZT5250H-B3V9X units undergo pre-shipment inspection (PSI). If there is an issue with BZT5250H-B3V9X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BZT5250H-B3V9X part is unused and in its original packaging.

Return procedure for BZT5250H-B3V9X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BZT5250H-B3V9X Tags

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