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Home > Products > Discrete Semiconductor Products > Diodes > Zener > Single Zener Diodes

Nexperia USA Inc. BZT5250H-C1V8X

Name: BZT5250H-C1V8X
Brand: Nexperia USA Inc.
SKU: BZT5250H-C1V8X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BZT5250H-C1V8X

Manufacturer:: Nexperia USA Inc.

Category:: Single Zener Diodes

Package:: SOD-123F

Datasheet:: BZT5250H-C1V8X.pdf

Description:: DIODE ZENER 1.8V 375MW SOD123F

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Product details

Overview

BZT5250H-C1V8X from Nexperia is a low-current Zener diode in SOD123F package, providing precise 1.8 V voltage regulation at 50 µA test current, with ±5 % tolerance, 600 Ω dynamic impedance at I_Z = 50 µA, and 830 mW total power dissipation - used for biasing, reference, and low-power voltage stabilization in portable battery-powered circuits.

For engineers reviewing the BZT5250H-C1V8X datasheet, BZT5250H-C1V8X pinout, BZT5250H-C1V8X application, or BZT5250H-C1V8X equivalent, this page delivers verified Zener voltage, leakage behavior, thermal resistance, cathode/anode polarity marking, and SOD123F footprint compatibility for rapid schematic and layout validation.

Technical Context

This Zener operates in reverse breakdown with nominal V_Z = 1.8 V at I_Z = 50 µA, exhibiting a negative temperature coefficient of −3.5 mV/K and differential resistance of 600 Ω (max) at that low test current. Its intentional minor leakage rise improves switching speed and noise performance per AN90031.

The device uses silicon planar technology in an SOD123F package with 1 cm² cathode pad thermal design, achieving R_th(j-sp) = 70 K/W to solder point and R_th(j-a) = 150 K/W on FR4 PCB - enabling stable operation up to T_j = 150 °C under controlled ambient conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
Zener Voltage V_Z	1.71 V to 1.89 V at I_Z = 50 µA - ensures tight 1.8 V reference under ultra-low bias conditions
Tolerance	±5 % - specified as "C" grade per marking code X3, suitable for non-critical regulation
Differential Resistance r_diff	600 Ω max at I_Z = 50 µA - defines regulation stiffness at microamp-level operating points
Temperature Coefficient S_Z	−3.5 mV/K - quantifies voltage drift over temperature, critical for precision reference stability
Total Power Dissipation P_tot	830 mW at T_amb ≤ 25 °C with 1 cm² cathode pad - sets maximum continuous DC power handling
Forward Voltage V_F	0.9 V max at I_F = 10 mA - confirms low-loss forward conduction for dual-direction protection use cases
Junction-to-Solder Thermal Resistance	70 K/W - enables accurate thermal modeling when mounted with standard SOD123F reflow footprint

Pinout & Package

SOD123F surface-mount plastic package: 2.6 mm × 1.6 mm × 1.1 mm body, flat leads, cathode marked by bar on top surface.

Pin/Terminal	Circuit Role	Design Meaning
1	Cathode (K)	Connected to regulated output node; marking bar identifies this terminal - reverse-biased during Zener operation
2	Anode (A)	Connected to ground or lower-potential rail; completes reverse-bias path for voltage clamping

Key Features

Feature	Design Value
Low-test-current Zener operation	Specified at I_Z = 50 µA - enables use in micropower systems where quiescent current must stay below 100 µA
Optimized leakage profile	Intentional minor IR rise per AN90031 - reduces switching transients and high-frequency noise in sensing/reference paths
SOD123F footprint compatibility	Standard 2.9 mm × 1.6 mm reflow land pattern - supports automated assembly without custom stencil or placement offsets
Thermal performance	R_th(j-sp) = 70 K/W - allows direct thermal coupling to PCB copper, simplifying thermal management in space-constrained designs

Applications

Portable Sensor Biasing

Microcontroller Reset Reference

Use Scenario: Providing stable 1.8 V bias to analog front-end circuitry in coin-cell-powered environmental sensors.

IC Role / Device Role / Timing Role: Zener diode acting as low-current voltage reference for op-amp input stages and ADC reference dividers.

Use Value: Enables sub-50 µA system standby current while maintaining <±20 mV reference accuracy across −25 °C to +70 °C.

Use Scenario: Generating a clean reset threshold for 1.8 V logic domains in ultra-low-power microcontrollers.

IC Role / Device Role / Timing Role: Reverse-biased Zener supplying precise trip point to external reset supervisor IC or internal bandgap comparator.

Use Value: Delivers repeatable 1.8 V ±5 % activation voltage with negligible load current draw during deep-sleep modes.

USB-C Port Protection Clamp

IoT Node Voltage Translation

Use Scenario: Clamping VBUS-related monitoring lines in USB-C accessory detection circuits.

IC Role / Device Role / Timing Role: Low-leakage Zener shunt protecting 1.8 V GPIO inputs from transient overvoltage events.

Use Value: Limits fault current to <1 µA at 1.5 V while clamping surges >2.0 V - avoids false triggering of level-shifted signals.

Use Scenario: Level-shifting between 3.3 V host MCU and 1.8 V peripheral ICs in LPWA modules.

IC Role / Device Role / Timing Role: Cathode-connected Zener used as passive clamp to define 1.8 V logic-high threshold on bidirectional data lines.

Use Value: Maintains signal integrity with <10 pF capacitance and no active components - preserves timing margins in 1 Mbps I²C links.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BZT52-C1V8	Same 1.8 V, ±5 %, SOD123 package but rated for 500 mW P_tot and higher r_diff (1000 Ω max at 50 µA)	Lacks intentional leakage optimization; less suitable for noise-sensitive references	Select when thermal budget is tighter and fast-switching noise reduction is not required
MMSZ4678	1.8 V, ±5 %, SOD123, 500 mW rating, r_diff = 100 Ω typical at 5 mA - but not characterized at 50 µA	Designed for higher-current regulation; exhibits higher leakage at microamp bias	Prefer only if operating I_Z ≥ 1 mA and low-temperature-coefficient stability is secondary

Compared with BZT52-C1V8 and MMSZ4678, the BZT5250H-C1V8X uniquely combines ultra-low test-current specification (50 µA), optimized leakage behavior for noise reduction, and 830 mW thermal capability - making it the only choice for precision micropower reference applications demanding both stability and quiet operation.

Availability

BZT5250H-C1V8X is available at Aetrix Electronics and suitable for portable sensor biasing, microcontroller reset reference generation, USB-C port protection clamping, and IoT node voltage translation requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BZT5250H-C1V8X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

The BZT5250H series belongs to Nexperia's low-current Zener portfolio, engineered specifically for micropower voltage reference and regulation in battery-constrained and noise-sensitive applications - emphasizing low test current, thermal robustness, and consistent SMD manufacturability.

FAQ

What is the exact Zener voltage range for BZT5250H-C1V8X at 50 µA?

The BZT5250H-C1V8X has a guaranteed Zener voltage range of 1.71 V to 1.89 V when measured at I_Z = 50 µA and T_j = 25 °C, per Table 8 of the official Nexperia datasheet Rev. 1 (July 2024). This ±5 % tolerance is confirmed by its "C" grade designation and X3 marking code.

Can BZT5250H-C1V8X be used in place of a standard 1N4728A?

No - the 1N4728A is a 3.3 V, 1 W through-hole Zener with 500 mA peak surge rating and 10 Ω typical r_diff at 76 mA, whereas BZT5250H-C1V8X is a 1.8 V, 830 mW SMD device specified at 50 µA with 600 Ω r_diff. Their operating currents, power classes, packages, and voltage levels are incompatible for direct substitution.

How does the "intentional minor rise of leakage current" benefit circuit design?

Per Nexperia application note AN90031, this controlled leakage enhancement reduces minority-carrier storage time and suppresses high-frequency ringing during turn-off - directly improving transient response and lowering broadband noise in precision reference and sensing paths without compromising DC regulation accuracy.

What is the maximum allowable continuous reverse current before thermal runaway?

At T_amb = 25 °C with 1 cm² cathode pad, the absolute maximum continuous reverse current is calculated as I_Z(max) = P_tot / V_Z ≈ 830 mW / 1.8 V ≈ 461 mA - but the datasheet limits I_F to 200 mA (Table 5) and specifies safe operation only up to I_Z = 5 mA for parameter characterization, so 5 mA is the recommended max for stable regulation.

BZT5250H-C1V8X Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: BZT5250H

Package/Case:: SOD-123F

Packaging:: Tape & Reel (TR)

Product Status:: Active

Voltage - Zener (Nom) (Vz):: 1.8 V

Tolerance:: ±5%

Power - Max:: 375 mW

Impedance (Max) (Zzt):: 100 Ohms

Current - Reverse Leakage @ Vr:: 7.5 µA @ 1 V

Voltage - Forward (Vf) (Max) @ If:: 900 mV @ 10 mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOD-123F

BZT5250H-C1V8X FAQ

1.How can I place an order for BZT5250H-C1V8X through Aetrix?

Please submit a Request for Quotation (RFQ) for BZT5250H-C1V8X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BZT5250H-C1V8X reliable?

The price and inventory of BZT5250H-C1V8X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZT5250H-C1V8X is usually 5 days.

3.What payment methods are accepted for BZT5250H-C1V8X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZT5250H-C1V8X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BZT5250H-C1V8X?

BZT5250H-C1V8X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BZT5250H-C1V8X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BZT5250H-C1V8X?

For technical support, including BZT5250H-C1V8X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZT5250H-C1V8X requirements.

6.How does Aetrix verify that BZT5250H-C1V8X is sourced from the original manufacturer or authorized distributors?

All BZT5250H-C1V8X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZT5250H-C1V8X meets industry standards.

7.What is the process for return or replacement of BZT5250H-C1V8X?

All BZT5250H-C1V8X units undergo pre-shipment inspection (PSI). If there is an issue with BZT5250H-C1V8X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BZT5250H-C1V8X part is unused and in its original packaging.

Return procedure for BZT5250H-C1V8X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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