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Nexperia USA Inc. BZT5250H-C4V3X
- Part No.:
- BZT5250H-C4V3X
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Zener Diodes
- Package:
- SOD-123F
- Datasheet:
-
BZT5250H-C4V3X.pdf
- Description:
- DIODE ZENER 4.3V 375MW SOD123F
- Quantity:
- Payment:
- Shipping:
Inventory:9,545
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Product details
Overview
BZT5250H-C4V3X from Nexperia is a low-current Zener diode in SOD123F package, providing 4.3 V nominal regulation at 50 µA test current with ±5 % tolerance, 95 Ω dynamic resistance at 5 mA, and -2.7 mV/K temperature coefficient-designed for voltage reference and biasing in portable battery-powered sensor nodes and low-power microcontroller reset circuits.
For engineers reviewing the BZT5250H-C4V3X datasheet, BZT5250H-C4V3X pinout, BZT5250H-C4V3X application, or BZT5250H-C4V3X equivalent, this page delivers verified electrical characteristics, thermal behavior, SOD123F mounting details, and real-world use cases for precision low-current regulation.
Technical Context
This Zener operates in reverse breakdown mode with specified regulation at IZ = 50 µA-a deliberate low-bias condition enabling minimal quiescent current draw in always-on monitoring circuits. Its differential resistance of 95 Ω at 5 mA ensures stable output under light load variation, while the negative temperature coefficient (-2.7 mV/K) enables predictable drift compensation in ambient-temperature-sensitive references.
The device uses an intentional minor leakage current enhancement (per AN90031) to improve switching speed and reduce noise in feedback paths. Thermal resistance from junction to solder point is 150 K/W on standard FR4 PCB, supporting reliable operation up to 150 °C junction temperature under defined mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage VZ | 4.09 V to 4.52 V at IZ = 50 µA - defines tight regulation window for low-power reference design |
| Differential Resistance rdiff | 95 Ω at IZ = 5 mA - determines output impedance and load regulation error |
| Temperature Coefficient SZ | -2.7 mV/K - enables predictable thermal drift modeling in precision analog stages |
| Forward Voltage VF | ≤ 0.9 V at IF = 10 mA - ensures low conduction loss when used bidirectionally or as clamp |
| Total Power Dissipation Ptot | 830 mW at Tamb ≤ 25 °C with 1 cm² cathode pad - sets maximum continuous power under defined PCB layout |
| Junction Temperature Tj | 150 °C absolute maximum - constrains thermal design margin for long-term reliability |
| Reverse Current IR | ≤ 4.0 µA at VR = 4.09 V - confirms low leakage below knee voltage for standby integrity |
Pinout & Package
SOD123F surface-mount plastic package: 2.6 mm × 1.6 mm × 1.1 mm body, flat lead profile optimized for automated placement and reflow soldering on FR4 PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (K) | Connected to regulated output node; marking bar identifies this terminal for correct orientation during assembly |
| 2 | Anode (A) | Connected to ground or lower-potential rail; forms reverse-biased junction for Zener operation |
Key Features
| Feature | Design Value |
|---|---|
| Low-test-current regulation | Specified at 50 µA - enables direct connection to high-impedance MCU ADC inputs or ultra-low-power comparators without loading |
| Optimized leakage profile | Intentional minor rise per AN90031 - reduces switching transients and broadband noise in feedback loops |
| Compact SMD footprint | SOD123F package - saves board space in wearables and IoT edge nodes where area is constrained |
| Two-tolerance series | ±5 % (C-series) - balances cost and accuracy for non-critical biasing versus ±2 % (B-series) for tighter references |
| Thermal robustness | 150 °C max junction temperature - supports operation in sealed enclosures or near heat-generating components |
Applications
| Portable Sensor Biasing | MCU Reset Reference |
|---|---|
Use Scenario: Providing stable 4.3 V reference to analog front-end of battery-powered environmental sensor (e.g., CO₂, humidity). IC Role / Device Role / Timing Role: Zener diode operating in reverse breakdown as precision voltage reference source. Use Value: Delivers <4.0 µA leakage at 4.09 V, minimizing battery drain over multi-year deployments while maintaining ±5 % regulation accuracy. | Use Scenario: Generating clean, temperature-compensated threshold for microcontroller POR (power-on reset) circuit. IC Role / Device Role / Timing Role: Zener-based voltage divider feeding comparator input to trigger reset assertion. Use Value: -2.7 mV/K temperature coefficient allows predictable trip-point shift across -40 °C to +85 °C, avoiding false resets. |
| Low-Power ADC Reference | LED Current Sense Clamp |
Use Scenario: Supplying reference voltage to 12-bit SAR ADC in energy-harvesting node powered by solar cell + supercapacitor. IC Role / Device Role / Timing Role: Low-current Zener acting as shunt reference for ADC internal buffer stage. Use Value: 95 Ω dynamic resistance ensures <0.5 LSB error contribution under 10 µA load variation from ADC sampling transients. | Use Scenario: Clamping feedback voltage in constant-current LED driver using op-amp and MOSFET. IC Role / Device Role / Timing Role: Zener diode limiting op-amp output swing to prevent overdrive during transient load steps. Use Value: 0.9 V forward voltage at 10 mA enables fast turn-on during overvoltage events, limiting response time to <100 ns. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZT5250H-B4V3 | ±2 % tolerance (4.21 V–4.39 V), 600 Ω rdiff at 5 mA | Higher accuracy but higher impedance - better for static references, worse for dynamic loads | Select when regulation stability under varying current > accuracy tolerance |
| MMSZ4V3T1G | ±5 % tolerance, 90 Ω rdiff, SOD-123 package (identical outline), 500 mW Ptot | Lower power rating limits sustained dissipation in thermally constrained layouts | Select when legacy compatibility required and thermal headroom ≥ 330 mW exists |
Compared with BZT5250H-C4V3X, the BZT5250H-B4V3 offers tighter voltage control but poorer load regulation due to higher dynamic resistance, while MMSZ4V3T1G matches tolerance and package but sacrifices 330 mW of thermal margin-making the C4V3X optimal for balanced accuracy, stability, and power handling in compact designs.
Availability
BZT5250H-C4V3X is available at Aetrix Electronics and suitable for portable sensor biasing, MCU reset reference, and low-power ADC reference applications requiring stable component supply, consistent parametric performance, and long-lifecycle availability.
Supply support for BZT5250H-C4V3X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies-delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
The BZT5250H series belongs to Nexperia's general-purpose Zener portfolio, engineered specifically for low-current regulation in battery-constrained and space-limited applications where minimal leakage and predictable thermal behavior are critical.
FAQ
What is the maximum reverse voltage before breakdown for BZT5250H-C4V3X?
The nominal Zener voltage is 4.3 V with a guaranteed range of 4.09 V to 4.52 V at 50 µA test current. Breakdown begins within this band; no distinct "maximum reverse voltage before breakdown" is specified-the device is designed to operate in controlled reverse conduction across its rated VZ window.
Can BZT5250H-C4V3X be used in forward conduction mode?
Yes-it exhibits ≤ 0.9 V forward voltage at 10 mA, making it suitable as a low-drop clamp or protection diode. However, its primary design intent and characterization are for reverse-biased Zener operation; forward parameters are secondary and not optimized for rectification duty cycles.
How does the "intentional minor rise of leakage current" affect circuit noise?
Per AN90031, this controlled leakage improves carrier sweep-out speed, reducing minority-carrier storage time and associated switching noise. Measured result is lower broadband noise in feedback paths-particularly beneficial in precision op-amp references and low-frequency sensor signal chains.
Is the SOD123F package compatible with standard reflow profiles?
Yes-Nexperia specifies reflow soldering as the only recommended method. The SOD123F footprint (2.9 mm × 1.6 mm land pattern) is validated for JEDEC J-STD-020-compliant profiles, including peak temperatures up to 260 °C, with no thermal damage observed when using the recommended pad geometry and solder paste volume.
BZT5250H-C4V3X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- BZT5250H
- Package/Case:
- SOD-123F
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 4.3 V
- Tolerance:
- ±5%
- Power - Max:
- 375 mW
- Impedance (Max) (Zzt):
- 95 Ohms
- Current - Reverse Leakage @ Vr:
- 4 µA @ 2 V
- Voltage - Forward (Vf) (Max) @ If:
- 900 mV @ 10 mA
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-123F
BZT5250H-C4V3X FAQ
1.How can I place an order for BZT5250H-C4V3X through Aetrix?
Please submit a Request for Quotation (RFQ) for BZT5250H-C4V3X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BZT5250H-C4V3X reliable?
The price and inventory of BZT5250H-C4V3X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZT5250H-C4V3X is usually 5 days.
3.What payment methods are accepted for BZT5250H-C4V3X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZT5250H-C4V3X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BZT5250H-C4V3X?
BZT5250H-C4V3X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BZT5250H-C4V3X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BZT5250H-C4V3X?
For technical support, including BZT5250H-C4V3X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZT5250H-C4V3X requirements.
6.How does Aetrix verify that BZT5250H-C4V3X is sourced from the original manufacturer or authorized distributors?
All BZT5250H-C4V3X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZT5250H-C4V3X meets industry standards.
7.What is the process for return or replacement of BZT5250H-C4V3X?
All BZT5250H-C4V3X units undergo pre-shipment inspection (PSI). If there is an issue with BZT5250H-C4V3X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BZT5250H-C4V3X part is unused and in its original packaging.
Return procedure for BZT5250H-C4V3X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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