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Nexperia USA Inc. BZT5250H-C8V2X
- Part No.:
- BZT5250H-C8V2X
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Zener Diodes
- Package:
- SOD-123F
- Datasheet:
-
BZT5250H-C8V2X.pdf
- Description:
- DIODE ZENER 8.2V 375MW SOD123F
- Quantity:
- Payment:
- Shipping:
Inventory:6,854
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Product details
Overview
BZT5250H-C8V2X from Nexperia is a low-current Zener diode in SOD123F package, designed for precision voltage regulation at 8.2 V nominal with ±5 % tolerance, specified at 50 µA test current, and rated for 830 mW total power dissipation. It serves as a stable reference or clamp in portable battery-powered circuits, sensor biasing networks, and low-power microcontroller reset supervision.
For engineers reviewing the BZT5250H-C8V2X datasheet, BZT5250H-C8V2X pinout, BZT5250H-C8V2X application, or BZT5250H-C8V2X equivalent, this page delivers verified electrical parameters, thermal behavior, cathode/anode terminal mapping, SOD123F footprint compatibility, and real-world use cases in energy-constrained systems.
Technical Context
This Zener operates in reverse breakdown with a nominal 8.2 V regulation voltage at IZ = 50 µA, exhibiting 80 Ω differential resistance at 5 mA and a +3.2 mV/K temperature coefficient. Its low leakage (≤0.1 µA at 6.2 V) and optimized fast-switching behavior stem from intentional minor leakage rise per AN90031.
The device features a maximum forward voltage of 0.9 V at 10 mA, junction-to-ambient thermal resistance of 330 K/W on FR4 PCB, and non-repetitive surge capability up to 40 W for 100 µs pulses - enabling robust transient suppression in compact layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage VZ | 7.79 V to 8.61 V at IZ = 50 µA - ensures stable 8.2 V reference under ultra-low bias conditions typical in battery monitoring. |
| Differential Resistance rdiff | 80 Ω at IZ = 5 mA - limits output impedance drift during small-signal regulation, critical for analog sensor interfaces. |
| Temperature Coefficient SZ | +3.2 mV/K - provides predictable positive drift over temperature, simplifying compensation in wide-temperature-range designs. |
| Reverse Current IR | ≤0.1 µA at VR = 6.2 V - minimizes standby power loss in always-on circuits such as RTC backup supplies. |
| Total Power Dissipation Ptot | 830 mW at Tamb ≤ 25 °C with 1 cm² cathode pad - supports sustained operation in thermally constrained SMT layouts. |
| Forward Voltage VF | 0.9 V max at IF = 10 mA - enables efficient forward conduction when used as polarity protection or clamping diode. |
| Junction Temperature Tj | 150 °C maximum - allows reliable operation in industrial ambient environments without derating below 125 °C. |
Pinout & Package
SOD123F surface-mount plastic package: 2.6 mm × 1.6 mm × 1.1 mm body, flat lead profile, cathode marked by bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (K) | Connected to regulated output node; marking bar identifies this terminal - essential for correct orientation in voltage reference paths. |
| 2 | Anode (A) | Connected to ground or lower-potential rail; forms reverse-biased junction enabling Zener breakdown at 8.2 V. |
Key Features
| Feature | Design Value |
|---|---|
| Low-test-current specification | Rated at 50 µA - enables accurate regulation in µA-level bias networks, extending battery life in wearables and IoT sensors. |
| Optimized leakage profile | Intentional minor rise per AN90031 - reduces switching noise and improves transient response in feedback loops. |
| Thermal performance | Rth(j-sp) = 150 K/W to solder point - facilitates heat transfer through cathode pad, supporting higher DC loads on standard FR4. |
| Surge robustness | 40 W non-repetitive peak power (100 µs) - withstands ESD transients and inductive kickback without degradation. |
| Compact footprint | SOD123F outline with 0.55–0.70 mm lead pitch - fits high-density PCBs where space is constrained, e.g., medical patch monitors. |
Applications
| Portable Battery Monitoring | Microcontroller Reset Supervision |
|---|---|
|
Use Scenario: Monitoring Li-ion cell voltage during sleep mode in Bluetooth LE beacons. IC Role / Device Role / Timing Role: Zener reference for ADC input scaling and undervoltage detection threshold. Use Value: 50 µA test current ensures <1 µA total quiescent draw from the Zener itself, preserving multi-year battery life. |
Use Scenario: Generating a clean 8.2 V reset threshold for an ARM Cortex-M0+ MCU in smart metering. IC Role / Device Role / Timing Role: Precision shunt regulator feeding comparator input to trigger POR or brownout reset. Use Value: ±5 % tolerance and +3.2 mV/K TC allow deterministic reset window across –40 °C to +85 °C without trimming. |
| Sensor Biasing Network | Low-Power Analog Front-End Clamping |
|
Use Scenario: Providing stable 8.2 V bias to MEMS pressure sensor bridge in environmental data loggers. IC Role / Device Role / Timing Role: Low-noise voltage reference source for Wheatstone bridge excitation. Use Value: 80 Ω dynamic impedance minimizes supply-induced error in bridge output, maintaining <0.1 % linearity. |
Use Scenario: Protecting op-amp inputs from overvoltage in battery-powered gas detection circuitry. IC Role / Device Role / Timing Role: Fast-acting shunt clamp limiting input swing to 8.2 V + VF. Use Value: Optimized leakage profile ensures sub-10 ns response to transients while avoiding false triggering during normal signal slew. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX84-C8V2 | Same 8.2 V nominal, ±5 %, but SOT23 package (higher Rth(j-a) = 375 K/W); no intentional leakage optimization. | Limited to lower-power applications due to 300 mW Ptot; unsuitable for sustained 5 mA regulation in compact layouts. | Select when board space permits larger footprint and thermal management is less critical than cost. |
| MMSZ5238B | 8.2 V, ±5 %, SOD-123 package but rated only at 500 mW Ptot; rdiff = 100 Ω at 20 mA - higher impedance than BZT5250H-C8V2X. | Requires higher test current (20 mA) for spec compliance - incompatible with µA-bias systems like coin-cell-powered sensors. | Choose only if legacy design reuse mandates MMSZ5238B footprint and power budget exceeds 500 mW. |
Compared with BZX84-C8V2 and MMSZ5238B, the BZT5250H-C8V2X delivers superior thermal capability (830 mW), lower dynamic impedance (80 Ω), and purpose-built low-current performance - making it the optimal choice for modern ultra-low-power regulation where accuracy, size, and efficiency intersect.
Availability
BZT5250H-C8V2X is available at Aetrix Electronics and suitable for portable battery monitoring, microcontroller reset supervision, and sensor biasing networks requiring stable component supply with guaranteed long-term continuity.
Supply support for BZT5250H-C8V2X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.
The BZT5250H series belongs to Nexperia's low-current Zener portfolio, engineered specifically for energy-efficient voltage reference and clamping in battery-powered and space-constrained electronics.
FAQ
What is the maximum continuous reverse current the BZT5250H-C8V2X can sustain at 25 °C ambient?
The device supports up to 5 mA continuous reverse current at 25 °C ambient when mounted on an FR4 PCB with a 1 cm² cathode pad, delivering full 8.2 V regulation while staying within its 830 mW power limit and maintaining thermal safety margin.
How does the intentional minor leakage rise affect circuit behavior in precision analog designs?
This controlled leakage enhancement, detailed in AN90031, reduces high-frequency noise and accelerates recovery from overvoltage events - improving stability in op-amp feedback paths and reducing jitter in comparator-based threshold detection without compromising DC accuracy.
Can the BZT5250H-C8V2X replace older BZT52-B8V2 variants in existing SOD123F layouts?
Yes - both share identical SOD123F package dimensions, pinout, and marking convention (cathode bar), and the C-series offers tighter thermal resistance (150 K/W vs. ~180 K/W) and improved surge handling, enabling direct drop-in replacement with enhanced reliability.
What is the minimum recommended PCB copper area for the cathode pad to achieve full 830 mW rating?
A 1 cm² tin-plated copper pad connected directly to the cathode terminal is required per datasheet condition [3]; using smaller pads or internal layers reduces allowable power dissipation linearly - e.g., 0.5 cm² limits Ptot to ~415 mW at 25 °C ambient.
BZT5250H-C8V2X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- BZT5250H
- Package/Case:
- SOD-123F
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 8.2 V
- Tolerance:
- ±5%
- Power - Max:
- 375 mW
- Impedance (Max) (Zzt):
- 15 Ohms
- Current - Reverse Leakage @ Vr:
- 100 nA @ 6.2 V
- Voltage - Forward (Vf) (Max) @ If:
- 900 mV @ 10 mA
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-123F
BZT5250H-C8V2X FAQ
1.How can I place an order for BZT5250H-C8V2X through Aetrix?
Please submit a Request for Quotation (RFQ) for BZT5250H-C8V2X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BZT5250H-C8V2X reliable?
The price and inventory of BZT5250H-C8V2X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZT5250H-C8V2X is usually 5 days.
3.What payment methods are accepted for BZT5250H-C8V2X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZT5250H-C8V2X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BZT5250H-C8V2X?
BZT5250H-C8V2X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BZT5250H-C8V2X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BZT5250H-C8V2X?
For technical support, including BZT5250H-C8V2X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZT5250H-C8V2X requirements.
6.How does Aetrix verify that BZT5250H-C8V2X is sourced from the original manufacturer or authorized distributors?
All BZT5250H-C8V2X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZT5250H-C8V2X meets industry standards.
7.What is the process for return or replacement of BZT5250H-C8V2X?
All BZT5250H-C8V2X units undergo pre-shipment inspection (PSI). If there is an issue with BZT5250H-C8V2X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BZT5250H-C8V2X part is unused and in its original packaging.
Return procedure for BZT5250H-C8V2X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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