Taiwan Semiconductor Corporation BZT52B2V4-G RHG

Overview

BZT52B2V4-G from Taiwan Semiconductor is a 2.4 V ±2% tolerance, 410 mW surface-mount Zener diode in SOD-123 package, optimized for low-voltage stabilization and precision voltage reference in space-constrained DC/DC converters and adapters.

For engineers reviewing the BZT52B2V4-G datasheet, BZT52B2V4-G pinout, BZT52B2V4-G application, or BZT52B2V4-G equivalent, key selection criteria include zener voltage accuracy (2.35–2.45 V at 5 mA), low dynamic impedance (100 Ω max), tight temperature coefficient (−3.5 mV/°C), and RoHS/halogen-free compliance for industrial and consumer power management designs.

Technical Context

The BZT52B2V4-G operates as a single-die, cathode-banded Zener diode with sharp reverse breakdown at nominal 2.4 V. It delivers stable regulation under 5 mA test current with guaranteed leakage ≤50 µA at 1.0 V reverse bias and forward voltage of 0.9 V at 10 mA.

Designed for ambient temperatures from −55°C to +150°C, it features junction-to-ambient thermal resistance of 357°C/W and supports reflow soldering per J-STD-002 with matte tin-plated leads. Its SOD-123 mechanical outline enables high-density PCB layouts in compact power rails.

Key Specifications

Pinout & Package

Package: SOD-123 - surface-mount plastic case with cathode band marking; 10.54 mg weight; UL 94V-0 rated molding compound; JEDEC-compliant footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with MMBZ5221B-7-F and BZX84-C2V4, the BZT52B2V4-G provides superior voltage accuracy, lower dynamic impedance, and documented thermal stability - making it the preferred choice for regulated power supply feedback and precision analog reference designs requiring long-term stability.

Availability

BZT52B2V4-G is available at Aetrix Electronics and suitable for adapter power rails, on-board DC/DC converter feedback, and low-voltage microcontroller reset circuits requiring stable component supply and full RoHS/halogen-free compliance.

Supply support for BZT52B2V4-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete power devices, analog ICs, and protection components for industrial, computing, and consumer markets.

The BZT52B series is part of TSC's precision Zener diode product line, engineered specifically for low-voltage stabilization and voltage reference applications demanding tight tolerance, low leakage, and robust thermal performance in compact SMD packages.

FAQ

What is the nominal zener voltage and tolerance of the BZT52B2V4-G?

The BZT52B2V4-G has a nominal zener voltage of 2.4 V with a guaranteed tolerance of ±2%, meaning its actual breakdown voltage falls between 2.35 V and 2.45 V when tested at 5 mA. This tight tolerance is confirmed in the Electrical Specifications table on page 2 of the official Taiwan Semiconductor datasheet (Version H2002). The BZT52B2V4-G achieves this precision through process-controlled doping and wafer-level screening.

What is the maximum power dissipation and thermal resistance of the BZT52B2V4-G?

The BZT52B2V4-G has a total power dissipation rating of 410 mW at 25°C ambient, with a junction-to-ambient thermal resistance (R_θJA) of 357°C/W. This value is measured under standard JEDEC test conditions for SOD-123 packages. The BZT52B2V4-G can operate continuously up to +150°C junction temperature, but derating is required above 25°C ambient per the Power Dissipation Curve in the datasheet.

Does the BZT52B2V4-G have a specified temperature coefficient, and what does it mean for circuit design?

Yes, the BZT52B2V4-G has a typical temperature coefficient of −3.5 mV/°C, indicating its zener voltage decreases by approximately 3.5 mV for every 1°C rise in junction temperature. This parameter is critical for applications requiring stable references over temperature, such as sensor signal conditioning or precision power supply feedback. The BZT52B2V4-G's negative coefficient helps counteract positive drift in other components, enabling passive compensation strategies in analog designs.

What is the packaging format and moisture sensitivity level for the BZT52B2V4-G?

The BZT52B2V4-G is supplied in SOD-123 package on 7-inch reels with 3,000 units per reel (ordering code BZT52B2V4-G RHG). Its moisture sensitivity level is rated at Level 1 per J-STD-020, meaning it may be stored indefinitely at ≤30°C/60% RH without baking prior to surface-mount reflow. This eliminates pre-reflow handling steps and reduces manufacturing risk - a verified specification confirmed in the Mechanical Data section of the Taiwan Semiconductor datasheet.

How does the BZT52B2V4-G compare to higher-voltage variants like BZT52B12-G in terms of dynamic impedance?

The BZT52B2V4-G has a maximum zener impedance (Z_ZT) of 100 Ω at 5 mA, while the BZT52B12-G specifies 25 Ω at the same test current. Lower-voltage Zeners typically exhibit higher dynamic impedance due to fundamental semiconductor physics - the BZT52B2V4-G's 100 Ω reflects this inherent trade-off. Designers must account for this in feedback loop stability analysis, especially in high-bandwidth DC/DC converters where the BZT52B2V4-G's impedance directly impacts phase margin.