Taiwan Semiconductor Corporation BZT52B3V0-G RHG

Overview

BZT52B3V0-G from Taiwan Semiconductor is a 3.0 V ±2% tolerance, 410 mW surface-mount Zener diode in SOD-123 package, designed for low-voltage stabilization and precision voltage reference in space-constrained DC/DC converters and adapter circuits.

For engineers reviewing the BZT52B3V0-G datasheet, BZT52B3V0-G pinout, BZT52B3V0-G application, or BZT52B3V0-G equivalent, key selection criteria include its 2.94–3.06 V zener voltage at 5 mA, 95 Ω dynamic impedance, -3.5 mV/°C temperature coefficient, and SOD-123 thermal performance (R_θJA = 357 °C/W).

Technical Context

The BZT52B3V0-G operates as a single-die, cathode-banded Zener diode with sharp reverse breakdown at nominal 3.0 V. Its ±2% V_Z tolerance and low 95 Ω zener impedance at I_ZT = 5 mA support stable regulation under varying load conditions.

It features a junction temperature range of -55°C to +150°C, moisture sensitivity level 1 per J-STD-020, and RoHS/halogen-free compliance. Forward voltage is specified at 0.9 V @ 10 mA, confirming standard silicon PN junction behavior.

Key Specifications

Pinout & Package

Package: SOD-123 - surface-mount plastic case with matte tin-plated leads, polarity indicated by cathode band, weight ≈10.54 mg.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with MMBZ5223BS-7-F and 1N4723TR, the BZT52B3V0-G delivers tighter voltage tolerance, superior thermal efficiency in SMT layouts, and lower leakage-making it optimal for modern compact DC/DC feedback and low-power reference applications where precision and density are critical.

Availability

BZT52B3V0-G is available at Aetrix Electronics and suitable for low-voltage stabilizers, on-board DC/DC converters, and adapter designs requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for BZT52B3V0-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete power devices, analog ICs, and protection components for industrial and consumer markets.

The BZT52B series is part of TSC's precision Zener diode product line, engineered specifically for high-accuracy voltage reference and stabilization in space-constrained, high-reliability power management subsystems.

FAQ

What is the exact zener voltage range for BZT52B3V0-G at 5 mA test current?

The BZT52B3V0-G has a guaranteed zener voltage range of 2.94 V (minimum) to 3.06 V (maximum) when tested at I_ZT = 5 mA, per Taiwan Semiconductor's H2002 datasheet revision. This ±2% tolerance reflects the device's precision grade and distinguishes it from standard ±5% Zeners. The nominal value is 3.0 V, and all units are binned to this specification before shipment.

Is BZT52B3V0-G compatible with lead-free reflow soldering processes?

Yes, the BZT52B3V0-G is fully compatible with lead-free reflow soldering. Its matte tin-plated leads meet J-STD-002 solderability requirements, and the SOD-123 package is rated for peak reflow temperatures up to 260°C per J-STD-020. Moisture sensitivity level 1 confirms no baking is required prior to assembly, simplifying manufacturing flow.

What is the maximum allowable continuous reverse current for BZT52B3V0-G without exceeding P_tot?

At 25°C ambient, the BZT52B3V0-G can sustain up to 136 mA reverse current continuously without exceeding its 410 mW total power dissipation limit (since 3.06 V × 134 mA ≈ 410 mW). However, derating is required above 25°C per its 357 °C/W R_θJA; at 75°C ambient, max continuous I_Z drops to ~85 mA. Always verify junction temperature using actual board thermal design.

Does BZT52B3V0-G have a specified forward voltage, and how is it used in circuit design?

Yes, the BZT52B3V0-G specifies a forward voltage of 0.9 V at I_F = 10 mA. This parameter is relevant when the diode is used in forward conduction mode-for example, as a polarity protection element or in dual-direction clamp configurations. It confirms standard silicon diode behavior and aids in calculating forward-bias power loss during fault conditions.

How does the -3.5 mV/°C temperature coefficient affect BZT52B3V0-G performance in temperature-varying environments?

The -3.5 mV/°C temperature coefficient means the BZT52B3V0-G's zener voltage decreases by approximately 3.5 mV for every 1°C rise in junction temperature. Over a -40°C to +125°C operating range, this results in a total shift of ~577 mV. Designers use this known drift to compensate reference circuits-e.g., pairing with positive-tempco components-or select it where predictable downward drift is acceptable, such as in brown-out detection thresholds.