Taiwan Semiconductor Corporation BZT52B5V1-G

Overview

BZT52B5V1-G from Taiwan Semiconductor is a 5.1 V ±2% tolerance Zener diode in SOD-123 package, rated for 410 mW total power dissipation and 5 mA test current, with 60 Ω dynamic impedance at I_ZT, used for precision low-voltage stabilization in DC/DC converters and adapter circuits.

For engineers reviewing the BZT52B5V1-G datasheet, BZT52B5V1-G pinout, BZT52B5V1-G application, or BZT52B5V1-G equivalent, key selection criteria include zener voltage tolerance (±2%), thermal resistance (357 °C/W), junction temperature range (–55 to +150 °C), leakage current (2 µA at 2 V), and temperature coefficient (–2.7 mV/°C).

Technical Context

The BZT52B5V1-G operates as a single-die, surface-mount Zener diode optimized for stable voltage reference and regulation in low-power linear circuits. Its 5.1 V nominal breakdown voltage is specified at 5 mA test current, with tight 2% tolerance and low 60 Ω zener impedance ensuring minimal output variation under load.

Designed for ambient temperatures up to 150 °C, it features a –2.7 mV/°C temperature coefficient-indicating slight negative drift-and 2 µA maximum leakage at 2 V reverse bias, supporting reliable operation in compact, thermally constrained designs like on-board DC/DC modules.

Key Specifications

Pinout & Package

Package: SOD-123 - surface-mount, single-diode case with cathode band marking; dimensions per JEDEC DO-213AA; matte tin-plated leads, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with MMBZ5221B-7-F and 1N4733A, the BZT52B5V1-G delivers tighter ±2% tolerance and higher 410 mW power density in a compact SOD-123 package-making it optimal for modern surface-mount designs requiring precision and thermal efficiency without sacrificing manufacturability.

Availability

BZT52B5V1-G is available at Aetrix Electronics and suitable for low-voltage stabilizers, on-board DC/DC converters, and adapter designs requiring stable component supply, consistent parametric performance, and RoHS-compliant sourcing.

Supply support for BZT52B5V1-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in discrete devices, analog ICs, and power management solutions since 1979.

The BZT52B series belongs to TSC's precision Zener diode product line, engineered specifically for high-accuracy voltage reference and stabilization in space-constrained, thermally demanding applications such as portable power supplies and industrial control modules.

FAQ

What is the nominal zener voltage and tolerance of the BZT52B5V1-G?

The BZT52B5V1-G has a nominal zener voltage of 5.1 V with a guaranteed tolerance of ±2%, meaning its actual breakdown voltage falls between 5.00 V and 5.20 V when tested at 5 mA. This tight tolerance is confirmed in the Electrical Specifications table on page 2 of the official Taiwan Semiconductor datasheet (Version H2002). The BZT52B5V1-G achieves this precision using process-controlled doping and laser trimming during fabrication.

What is the maximum power dissipation rating for the BZT52B5V1-G?

The BZT52B5V1-G is rated for a maximum total power dissipation of 410 mW at an ambient temperature of 25 °C. This value decreases linearly above 25 °C due to its junction-to-ambient thermal resistance of 357 °C/W. Derating curves in Figure 1 of the datasheet confirm that at 75 °C ambient, the usable power drops to approximately 270 mW. The BZT52B5V1-G must be mounted on appropriate copper area to maintain safe junction temperature.

Does the BZT52B5V1-G have a specified temperature coefficient, and what does it mean for circuit design?

Yes, the BZT52B5V1-G has a typical temperature coefficient of –2.7 mV/°C, indicating its zener voltage decreases by approximately 2.7 mV for every 1 °C rise in junction temperature. This negative coefficient is characteristic of mid-voltage Zeners (~5 V) and must be accounted for in temperature-critical references. The BZT52B5V1-G datasheet specifies this value at 5 mA test current and confirms it via characterization curves, enabling accurate thermal drift modeling in precision analog circuits.

What is the zener impedance of the BZT52B5V1-G, and why does it matter?

The BZT52B5V1-G exhibits a maximum zener impedance (Z_ZT) of 60 Ω at 5 mA test current. This parameter quantifies how much the output voltage changes with load current variations-lower impedance yields better regulation. At 1 mA load step, the BZT52B5V1-G's output shifts less than 60 mV, making it suitable for applications requiring stable references under dynamic loading. This value is measured directly in the Electrical Specifications table and validated across production lots.

Is the BZT52B5V1-G compatible with lead-free reflow soldering processes?

Yes, the BZT52B5V1-G is fully compatible with lead-free reflow soldering. Its matte tin-plated leads meet J-STD-002 solderability requirements, and its moisture sensitivity level is rated at Level 1 per J-STD-020-meaning it can be stored indefinitely at ≤30 °C/60% RH without baking prior to assembly. The BZT52B5V1-G's SOD-123 package withstands peak reflow temperatures up to 260 °C, as verified in the Mechanical Data section of the Taiwan Semiconductor datasheet.