Taiwan Semiconductor Corporation BZT52B75-G

Overview

BZT52B75-G from Taiwan Semiconductor is a 75 V ±2% tolerance Zener diode in SOD-123 package, rated for 410 mW total power dissipation and 2 mA test current, designed for precision voltage reference and low-voltage stabilization in compact DC/DC converters and adapters.

For engineers reviewing the BZT52B75-G datasheet, BZT52B75-G pinout, BZT52B75-G application, or BZT52B75-G equivalent, key selection criteria include its 75 V nominal zener voltage with ±2% tolerance, 255 Ω dynamic impedance at 2 mA, 0.045 mV/°C temperature coefficient, and SOD-123 surface-mount compatibility for space-constrained industrial and consumer power regulation designs.

Technical Context

The BZT52B75-G operates as a single-die, silicon planar Zener diode optimized for stable reverse-breakdown conduction at 75 V with tight 2% voltage tolerance. Its 2 mA test current and 255 Ω zener impedance (ZZT) ensure predictable regulation under light-load conditions.

Designed for operation across –55°C to +150°C junction temperature range, it features a low 0.045 mV/°C temperature coefficient and 470 Ω knee impedance (ZZK) at 0.5 mA, supporting stable reference performance in thermally varying environments without external compensation.

Key Specifications

Pinout & Package

Package: SOD-123 - surface-mount plastic case with matte tin-plated leads, 10.54 mg weight, polarity indicated by cathode band.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with MMBZ5275B-7-F and 1N4742A, the BZT52B75-G delivers tighter ±2% voltage control and SOD-123 compatibility for modern compact SMPS designs, while avoiding the thermal and layout compromises of wider-tolerance or through-hole alternatives.

Availability

BZT52B75-G is available at Aetrix Electronics and suitable for adapter power supplies, on-board DC/DC converters, and low-voltage stabilizers requiring stable component supply with full RoHS and halogen-free compliance.

Supply support for BZT52B75-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete devices, analog ICs, and power management solutions for industrial and consumer markets.

The BZT52B series was developed to deliver high-precision, low-profile Zener references for space-constrained power regulation in adapters and embedded DC/DC systems, emphasizing tight tolerance, thermal stability, and lead-free manufacturability.

FAQ

What is the nominal zener voltage and tolerance of the BZT52B75-G?

The BZT52B75-G has a nominal zener voltage of 75 V with a guaranteed tolerance of ±2%, meaning its actual breakdown voltage falls between 73.5 V and 76.5 V when tested at 2 mA. This tight tolerance enables direct use in precision reference applications without calibration. The BZT52B75-G achieves this specification using silicon planar Zener technology with controlled doping and metallization.

What package type and mounting style does the BZT52B75-G use?

The BZT52B75-G uses the SOD-123 surface-mount package - a compact, gull-wing leaded plastic case measuring 2.7 mm × 1.6 mm × 1.1 mm. It features matte tin-plated leads compliant with J-STD-002 solderability standards and moisture sensitivity level 1 per J-STD-020, allowing standard reflow without pre-baking. The BZT52B75-G polarity is marked by a visible cathode band.

What is the maximum power dissipation and thermal resistance of the BZT52B75-G?

The BZT52B75-G is rated for 410 mW total power dissipation at 25°C ambient, with a junction-to-ambient thermal resistance (R_θJA) of 357°C/W. This means its junction temperature rises approximately 145°C above ambient at full rated power. Derating is required above 25°C, reaching zero power at 150°C junction. The BZT52B75-G's thermal performance is validated in the SOD-123 footprint with standard JEDEC pad layout.

How does the temperature coefficient affect the BZT52B75-G's voltage stability?

The BZT52B75-G exhibits a typical temperature coefficient of +0.045 mV/°C, indicating its zener voltage increases by 0.045 mV per degree Celsius rise in junction temperature. Over a –40°C to +125°C operating range, this results in less than ±7.5 mV total drift - critical for maintaining reference accuracy in unregulated thermal environments. The BZT52B75-G's coefficient is measured at 10 mA test current and reflects intrinsic silicon behavior, not external circuit effects.

Is the BZT52B75-G suitable for RoHS-compliant and halogen-free manufacturing?

Yes, the BZT52B75-G is fully RoHS-compliant per EU Directive 2011/65/EU and halogen-free per IEC 61249-2-21, with bromine and chlorine content below 900 ppm each. Its molding compound meets UL 94V-0 flammability rating, and all plating and substrate materials are certified for lead-free reflow processing. The BZT52B75-G documentation explicitly confirms compliance in its H2002 revision datasheet.