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Taiwan Semiconductor Corporation BZT52B8V2 RHG
- Part No.:
- BZT52B8V2 RHG
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Zener Diodes
- Package:
- SOD-123F
- Datasheet:
-
BZT52B8V2 RHG.pdf
- Description:
- DIODE ZENER 8.2V 500MW SOD123F
- Quantity:
- Payment:
- Shipping:
Inventory:5,997
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Product details
Overview
BZT52B8V2 RHG from Taiwan Semiconductor is a surface-mount, ±2% tolerance Zener diode in SOD-123F package, rated for 500 mW power dissipation, 8.20 V nominal zener voltage at 5 mA test current, and 15 Ω dynamic impedance at IZT. It serves as a precision voltage reference or overvoltage clamp in low-power analog and digital supply rails.
For engineers reviewing the BZT52B8V2 RHG datasheet, BZT52B8V2 RHG pinout, BZT52B8V2 RHG application, or BZT52B8V2 RHG equivalent, key selection criteria include its 8.04–8.36 V zener range, 0.63 µA maximum reverse leakage at 5.0 V, 150 °C junction temperature rating, and RoHS-compliant matte tin/Ni lead finish suitable for reflow soldering up to 260 °C/10 s.
Technical Context
The BZT52B8V2 RHG operates as a silicon planar junction Zener diode optimized for stable voltage regulation under reverse bias. Its 8.20 V nominal breakdown voltage is specified at IZT = 5 mA with ±2% tolerance, and it exhibits 15 Ω dynamic impedance (ZZT) at that condition - critical for low-noise reference stability.
Thermal performance is defined by RθJA = 350 °C/W and TJ = –65 to +150 °C, enabling reliable operation in compact PCB layouts without forced cooling. Reverse leakage remains ≤0.63 µA at VR = 5.0 V, supporting low-power standby circuits where quiescent current matters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 8.20 V nominal at IZT = 5 mA; tight ±2% tolerance ensures predictable clamping in feedback loops. |
| Power Dissipation (PD) | 500 mW at TA = 25 °C; derates linearly above ambient per Fig. 4 curve. |
| Dynamic Impedance (ZZT) | 15 Ω at IZT = 5 mA; low impedance maintains stable voltage under small-signal load variation. |
| Reverse Leakage (IR) | ≤0.63 µA at VR = 5.0 V; enables use in battery-backed or ultra-low-IQ circuits. |
| Thermal Resistance (RθJA) | 350 °C/W; defines junction-to-ambient thermal path in standard SOD-123F mounting on FR-4. |
| Junction Temperature (TJ) | –65 to +150 °C; supports industrial and automotive under-hood environments with proper layout. |
Pinout & Package
SOD-123F flat-lead plastic package: 3.3–3.9 mm length (B), 1.5–1.7 mm width (A), 0.5–0.7 mm thickness (C); cathode indicated by band; matte tin/Ni plating, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal / reference ground node | Connected to lower-potential side of circuit; forms return path during forward bias or zener regulation. |
| Cathode | Zener breakdown terminal / regulated output node | Connected to higher-potential rail; delivers stable 8.20 V when reverse biased above VZ. |
Key Features
| Feature | Design Value |
|---|---|
| ±2% Zener voltage tolerance | Enables precise voltage referencing without post-calibration in sensor signal conditioning or ADC reference buffers. |
| 500 mW power rating in SOD-123F | Supports moderate transient clamping in 3.3 V/5 V logic supply protection without requiring larger packages. |
| 15 Ω dynamic impedance at 5 mA | Minimizes output voltage shift under ±1 mA load variation - critical for stable feedback in LDO error amplifiers. |
| Halogen-free, RoHS-compliant construction | Meets IEC 61249-2-21 and Directive 2011/65/EU for environmentally regulated industrial and consumer designs. |
Applications
| Power Supply Regulation | Overvoltage Protection |
|---|---|
Use Scenario: Stabilizing reference voltage for low-current analog comparators or op-amp bias networks. IC Role / Device Role: Precision shunt voltage reference providing 8.20 V reference point. Use Value: Tight ±2% tolerance and 15 Ω ZZT ensure <±10 mV drift across 0–5 mA load current variation. |
Use Scenario: Clamping 12 V rail transients in microcontroller I/O protection circuits. IC Role / Device Role: Shunt overvoltage limiter diverting surge current above 8.36 V. Use Value: 0.63 µA leakage at 5 V preserves low-power sleep mode integrity while clamping fast spikes. |
| Signal Level Translation | Temperature-Stable Biasing |
Use Scenario: Generating fixed 8.2 V bias for MOSFET gate drive in low-side switch circuits. IC Role / Device Role: Passive voltage source establishing gate threshold offset. Use Value: Stable VZ over –40 to +125 °C enables consistent turn-on timing without active compensation. |
Use Scenario: Providing temperature-compensated bias for discrete transistor amplifier stages. IC Role / Device Role: Junction-based reference with predictable TC in series with NTC thermistor. Use Value: 150 °C max TJ and 350 °C/W RθJA allow direct PCB thermal coupling for predictable drift tracking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBZ5233BS-7-F (Diodes Inc.) | 8.2 V nominal, ±5% tolerance, 300 mW rating, SOT-23 package, 20 Ω ZZT | Higher power dissipation margin required; smaller footprint but lower thermal mass | Select when board space is constrained and ±5% tolerance is acceptable for non-critical biasing. |
| BZX84-C8V2 (ON Semiconductor) | 8.2 V nominal, ±5% tolerance, 350 mW rating, SOT-23 package, 20 Ω ZZT, 1 µA IR @ 5 V | Higher leakage and lower power rating limit use in low-IQ or high-temperature environments | Choose only for cost-sensitive, non-precision applications where 0.63 µA leakage and 500 mW headroom are not required. |
Compared with MMBZ5233BS-7-F and BZX84-C8V2, the BZT52B8V2 RHG offers tighter ±2% tolerance, higher 500 mW rating, lower 0.63 µA leakage, and superior thermal robustness - making it preferred for precision voltage references and industrial-grade protection circuits.
Availability
BZT52B8V2 RHG is available at Aetrix Electronics and suitable for power supply regulation, overvoltage protection, and signal level translation requiring stable component supply and RoHS-compliant sourcing.
Supply support for BZT52B8V2 RHG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor is a fabless semiconductor company specializing in discrete devices, offering broad portfolios of diodes, transistors, and rectifiers with emphasis on reliability and manufacturability.
The BZT52B8V2 RHG belongs to the BZT52B series of small-signal Zener diodes designed for precision voltage regulation and protection in space-constrained, high-reliability SMT applications.
FAQ
What is the zener voltage tolerance of the BZT52B8V2 RHG?
The BZT52B8V2 RHG has a zener voltage tolerance of ±2% at IZT = 5 mA, meaning its actual breakdown voltage falls between 8.04 V and 8.36 V under standard test conditions. This tight tolerance is confirmed in the Electrical Characteristics table of DS_S1405026 F15 and distinguishes it from ±5% alternatives like BZX84-C8V2. The BZT52B8V2 RHG achieves this via process-controlled junction doping and screening.
Is the BZT52B8V2 RHG compatible with lead-free reflow soldering?
Yes, the BZT52B8V2 RHG is qualified for lead-free reflow soldering at 260 °C for 10 seconds, as stated in the Mechanical Data section of its datasheet. Its matte tin (Sn) lead finish over nickel (Ni) underplate ensures reliable wetting and intermetallic formation. The BZT52B8V2 RHG also meets MSL Level 1, eliminating bake requirements prior to assembly.
What is the maximum reverse leakage current for the BZT52B8V2 RHG?
The BZT52B8V2 RHG specifies a maximum reverse leakage current (IR) of 0.63 µA at VR = 5.0 V and TA = 25 °C. This value is measured per the Electrical Characteristics table and reflects its suitability for low-quiescent-current applications such as battery-powered sensors or always-on monitoring circuits where standby power must be minimized.
Does the BZT52B8V2 RHG have halogen-free construction?
Yes, the BZT52B8V2 RHG uses halogen-free epoxy compound per IEC 61249-2-21, as explicitly noted in the Features section of DS_S1405026 F15. The "G" suffix in its part number (BZT52B8V2 RHG) denotes green compound compliance, confirming absence of brominated flame retardants and other regulated halogens - essential for environmental compliance in EU and Asia-Pacific markets.
What package type does the BZT52B8V2 RHG use?
The BZT52B8V2 RHG is housed in the SOD-123F package: a flat-lead, surface-mount plastic case measuring 3.3–3.9 mm in length (B), 1.5–1.7 mm in width (A), and 0.5–0.7 mm in thickness (C). Its cathode is marked by a visible band, and the package is optimized for automated pick-and-place and reflow. The BZT52B8V2 RHG's SOD-123F footprint matches JEDEC MO-203AB standards.
BZT52B8V2 RHG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- SOD-123F
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 8.2 V
- Tolerance:
- ±2%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 15 Ohms
- Current - Reverse Leakage @ Vr:
- 630 nA @ 5 V
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 10 mA
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-123F
BZT52B8V2 RHG FAQ
1.How can I place an order for BZT52B8V2 RHG through Aetrix?
Please submit a Request for Quotation (RFQ) for BZT52B8V2 RHG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BZT52B8V2 RHG reliable?
The price and inventory of BZT52B8V2 RHG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZT52B8V2 RHG is usually 5 days.
3.What payment methods are accepted for BZT52B8V2 RHG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZT52B8V2 RHG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BZT52B8V2 RHG?
BZT52B8V2 RHG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BZT52B8V2 RHG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BZT52B8V2 RHG?
For technical support, including BZT52B8V2 RHG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZT52B8V2 RHG requirements.
6.How does Aetrix verify that BZT52B8V2 RHG is sourced from the original manufacturer or authorized distributors?
All BZT52B8V2 RHG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZT52B8V2 RHG meets industry standards.
7.What is the process for return or replacement of BZT52B8V2 RHG?
All BZT52B8V2 RHG units undergo pre-shipment inspection (PSI). If there is an issue with BZT52B8V2 RHG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BZT52B8V2 RHG part is unused and in its original packaging.
Return procedure for BZT52B8V2 RHG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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