Diodes Incorporated BZT52C10S-7-F

Overview

BZT52C10S-7-F from Diodes Incorporated is a surface-mount Zener diode with a nominal zener voltage of 10 V (9.4–10.6 V at 5 mA), 200 mW power dissipation, and SOD323 package. It provides precision voltage regulation in low-power biasing, reference, and overvoltage protection circuits, commonly used in power supply feedback loops and sensor signal conditioning.

For engineers reviewing the BZT52C10S-7-F datasheet, BZT52C10S-7-F pinout, BZT52C10S-7-F application, or BZT52C10S-7-F equivalent, key selection criteria include zener voltage tolerance (±6%), dynamic impedance (20 Ω @ 5 mA), temperature coefficient (+4.5 mV/°C), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This Zener diode operates in reverse breakdown mode to maintain stable voltage across its terminals under varying load or input conditions. Its planar die construction ensures consistent breakdown characteristics, while the SOD323 package supports high-density PCB layouts and automated reflow assembly.

The device exhibits a positive temperature coefficient of +4.5 mV/°C above 6 V, enabling predictable drift compensation in temperature-sensitive references. With a maximum reverse current of 0.1 µA at VR = 8.0 V and thermal resistance of 625 °C/W, it delivers stable performance in ambient temperatures from –65 °C to +150 °C.

Key Specifications

Pinout & Package

Package: SOD323 - ultra-small plastic surface-mount case (1.30 mm × 1.70 mm × 0.90 mm), matte tin-plated alloy 42 leadframe, cathode indicated by band on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with MMBZ5240BS-7-F and BZX384-C10,115, the BZT52C10S-7-F offers AEC-Q101 qualification in the smallest SOD323 footprint with optimized trade-off between leakage (0.1 µA), impedance (20 Ω), and thermal resistance (625 °C/W) for space-constrained automotive modules.

Availability

BZT52C10S-7-F is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor interfaces, and consumer power adapter feedback circuits requiring stable component supply and long-term lifecycle support.

Supply support for BZT52C10S-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The BZT52 series belongs to Diodes' high-reliability Zener diode product line, engineered specifically for precision voltage reference and protection in automotive, industrial, and computing applications where AEC-Q101 compliance and tight parametric control are mandatory.

FAQ

What is the maximum reverse voltage (V_R) at which leakage remains below 0.1 µA?

The BZT52C10S-7-F guarantees reverse leakage ≤0.1 µA at V_R = 8.0 V, per the Electrical Characteristics table. At 9.0 V, leakage rises to approximately 0.2 µA, and at 10 V (near breakdown), it increases sharply-so 8.0 V is the practical upper limit for sub-0.1 µA operation.

Can this Zener diode be used in series to achieve higher regulated voltages?

Yes, multiple BZT52C10S-7-F devices can be stacked in series to generate higher reference voltages (e.g., 20 V with two units), but total power dissipation must remain within 200 mW per device. Thermal coupling and mismatched temperature coefficients will affect overall stability-parallel operation is not recommended due to current-sharing imbalance.

Is the SOD323 package compatible with standard 0603 reflow profiles?

Yes-the SOD323 footprint (1.3 mm × 1.7 mm) aligns with IPC-7351B 0603 recommendations. Diodes Incorporated specifies compatibility with standard SnPb and lead-free reflow profiles, and the device's Level 1 moisture sensitivity eliminates pre-bake requirements, simplifying SMT line integration.

How does the +4.5 mV/°C temperature coefficient impact long-term reference stability?

The +4.5 mV/°C coefficient causes ~45 mV drift over a 100 °C range (e.g., –40 °C to +60 °C), or ±0.45% of 10 V. For high-stability applications, this drift can be compensated in firmware or paired with a negative-TC component (e.g., silicon bandgap reference) in composite designs.