Taiwan Semiconductor Corporation BZT52C27-G

Overview

BZT52C27-G from Taiwan Semiconductor is a 27 V ±5% Zener diode in SOD-123 package, rated for 350 mW power dissipation and 2 mA zener test current, with 80 Ω dynamic impedance at I_ZT and 0.1 µA leakage at 18.9 V reverse bias. It serves as a precision voltage reference or overvoltage clamp in low-power analog and digital supply regulation circuits.

For engineers reviewing the BZT52C27-G datasheet, BZT52C27-G pinout, BZT52C27-G application, or BZT52C27-G equivalent, key selection criteria include its 27 V nominal zener voltage, 2 mA test current requirement, 80 Ω zener impedance, -55°C to +150°C junction temperature range, and SOD-123 surface-mount compatibility with J-STD-002 solderability.

Technical Context

The BZT52C27-G operates as a single-die, silicon planar Zener diode optimized for stable voltage regulation under reverse-biased conditions. Its 27 V nominal breakdown voltage is specified at 2 mA test current (I_ZT), with a maximum zener impedance of 80 Ω at that current and 300 Ω at knee current (I_ZK = 0.5 mA).

Thermal performance is defined by a junction-to-ambient thermal resistance of 357°C/W and a maximum junction temperature of +150°C. The device exhibits a positive temperature coefficient of +21.4 mV/°C at I_ZTC = 2 mA, indicating increasing V_Z with rising temperature - critical for temperature-sensitive reference designs.

Key Specifications

Pinout & Package

Package: SOD-123 - surface-mount, single-diode case with cathode band marking; 10.55 mg weight; UL 94V-0 molding compound; matte tin-plated leads compliant with J-STD-002 solderability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with MMBZ5256B-7-F and 1N4748A, the BZT52C27-G offers optimal balance of tight 2 mA test-point matching, SOD-123 manufacturability, and low-leakage performance for low-power regulation - making it preferred for modern compact, energy-efficient designs.

Availability

BZT52C27-G is available at Aetrix Electronics and suitable for industrial sensor conditioning, USB-C power delivery clamping, automotive BCM reset circuits, and IoT battery monitor references requiring stable component supply across extended temperature ranges and RoHS-compliant manufacturing.

Supply support for BZT52C27-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete devices, analog ICs, and power management solutions for industrial, computing, and consumer markets.

The BZT52C series is part of TSC's general-purpose Zener diode product line, engineered for high-volume, cost-effective voltage regulation and protection in surface-mount applications demanding reliability and environmental compliance.

FAQ

What is the nominal zener voltage and tolerance of BZT52C27-G?

The BZT52C27-G has a nominal zener voltage of 27 V with a tolerance of ±5%, meaning its actual breakdown voltage falls between 25.1 V and 28.9 V when tested at I_ZT = 2 mA. This tolerance is confirmed per the manufacturer's electrical specifications table and applies strictly under the stated test conditions - not at arbitrary currents or temperatures. The BZT52C27-G maintains this specification across its qualified operating temperature range.

What is the maximum power dissipation rating for BZT52C27-G?

The BZT52C27-G is rated for a maximum power dissipation of 350 mW at an ambient temperature of 25°C. Derating is required above 25°C per the published power derating curve, with junction-to-ambient thermal resistance of 357°C/W. This rating assumes proper PCB copper area and airflow; exceeding 350 mW risks thermal runaway or permanent degradation. The BZT52C27-G must be operated within this limit to ensure long-term reliability and parameter stability.

Does BZT52C27-G have a specified zener impedance, and at what current?

Yes, the BZT52C27-G specifies a maximum zener impedance (Z_ZT) of 80 Ω measured at the zener test current I_ZT = 2 mA. It also defines a higher impedance of up to 300 Ω at the knee current I_ZK = 0.5 mA. These values directly impact regulation accuracy under varying load conditions - lower Z_ZT yields tighter voltage control. The BZT52C27-G's 80 Ω value reflects its optimization for moderate-current stabilization tasks.

What is the leakage current specification for BZT52C27-G, and at what reverse voltage?

The BZT52C27-G specifies a maximum leakage current (I_R) of 0.1 µA at a reverse voltage (V_R) of 18.9 V. This value is measured at 25°C and confirms minimal off-state conduction well below the zener knee, critical for low-power and battery-operated applications. The BZT52C27-G maintains this ultra-low leakage across its full storage temperature range, supporting energy-efficient design requirements.

Is BZT52C27-G compatible with lead-free reflow soldering processes?

Yes, the BZT52C27-G features matte tin-plated leads and is rated for solderability per J-STD-002, fully compatible with standard lead-free reflow profiles. Its moisture sensitivity level is rated at Level 1 per J-STD-020, meaning it can be stored indefinitely at ≤30°C/60% RH without dry packing or baking prior to assembly. The BZT52C27-G's SOD-123 package and termination meet IPC-A-610 Class 2 and Class 3 acceptance criteria for automated SMT lines.