Diodes Incorporated BZT52C2V4LP-7

Overview

BZT52C2V4LP from Diodes Incorporated is a surface-mount Zener diode with nominal 2.4 V zener voltage, 5 mA test current, and ±0.2 V tolerance (2.2–2.6 V), rated for 250 mW power dissipation in DFN1006-2 package, used for precision voltage reference and overvoltage protection in low-power sensor interfaces and portable battery management circuits.

For engineers reviewing the BZT52C2V4LP datasheet, BZT52C2V4LP pinout, BZT52C2V4LP application, or BZT52C2V4LP equivalent, key selection criteria include zener voltage accuracy at 5 mA, low dynamic impedance (100 Ω @ I_ZT, 600 Ω @ I_ZK), AEC-Q101 qualification, and DFN1006-2 thermal performance (R_θJA = 500 °C/W).

Technical Context

This Zener diode operates in reverse breakdown to maintain stable voltage under varying load conditions. It delivers 2.4 V regulation with ±8.3% tolerance at 5 mA, exhibits temperature coefficient of –3.5 to 0 mV/°C, and supports low-current knee operation down to 1.0 mA with 600 Ω dynamic impedance.

Designed for automotive-grade reliability, it meets AEC-Q101 stress testing requirements and features NiPdAu-plated terminals for robust solderability. Its DFN1006-2 footprint enables high-density PCB layouts while maintaining thermal stability up to +150 °C junction temperature.

Key Specifications

Pinout & Package

DFN1006-2 two-terminal surface-mount package with cathode indicated by dot marking on top surface; terminals are symmetric, non-polarized in layout but functionally asymmetric (anode/cathode defined by marking).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with MMBZ5221BLT1G and BZX384-B2V4, BZT52C2V4LP offers the smallest footprint and automotive qualification, making it optimal for space-constrained, mission-critical applications-though its 250 mW rating requires careful thermal pad design versus the SOT-23 alternative.

Availability

BZT52C2V4LP is available at Aetrix Electronics and suitable for automotive cabin sensors, industrial temperature transmitters, portable medical pulse oximeters, and smart home smoke detectors requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BZT52C2V4LP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving automotive, industrial, computing, and consumer markets with high-reliability components.

The BZT52C series belongs to Diodes' AEC-Q101-qualified Zener diode product line, engineered specifically for voltage regulation and transient suppression in harsh-environment automotive and industrial control systems.

FAQ

What is the maximum reverse voltage (V_R) before breakdown for BZT52C2V4LP?

The device begins controlled Zener breakdown at 2.2 V (minimum specified V_Z) and achieves full regulation at 2.4 V nominal with 5 mA test current. Below 2.2 V, reverse leakage remains ≤50 µA at 1.0 V, confirming no significant conduction prior to the zener knee region.

Is BZT52C2V4LP suitable for bidirectional ESD protection?

No-it is a unidirectional Zener diode optimized for reverse-bias clamping only. Its forward voltage is 0.9 V at 10 mA, but it lacks symmetrical breakdown characteristics required for bidirectional TVS applications; dedicated ESD arrays like PESD5V0S1BA should be used instead.

How does the DFN1006-2 package affect thermal performance in PCB layout?

With R_θJA = 500 °C/W on FR-4 using minimum pad layout, thermal rise is 125 °C at full 250 mW dissipation. Effective heat sinking requires copper pour under the exposed pad area and ≥2 thermal vias to inner ground planes to reduce junction-to-ambient resistance below 200 °C/W.

Does the "LP" suffix indicate low power or lead-free construction?

The "LP" suffix denotes lead-free and RoHS-compliant construction per Diodes Incorporated's green policy, confirmed by NiPdAu terminal plating and UL 94V-0 molding compound. It does not indicate reduced power rating-the device retains full 250 mW capability at 25 °C.