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Taiwan Semiconductor Corporation BZT52C30-G

Part No.:
BZT52C30-G
Manufacturer:
Taiwan Semiconductor Corporation
Category:
Single Zener Diodes
Package:
SOD-123
Datasheet:
AetrixBZT52C30-G.pdf
Description:
DIODE ZENER 30V 350MW SOD123
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,671

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Product details

Overview

BZT52C30-G from Taiwan Semiconductor is a 30 V, ±5% tolerance Zener diode in SOD-123 package, rated for 350 mW power dissipation and 2 mA test current, with 80 Ω dynamic impedance at 2 mA and 0.1 µA leakage at 21.0 V reverse bias - used for precision voltage regulation in low-power analog circuits and reference supply rails.

For engineers reviewing the BZT52C30-G datasheet, BZT52C30-G pinout, BZT52C30-G application, or BZT52C30-G equivalent, key selection criteria include nominal Zener voltage (30 V), tight 5% tolerance, low leakage (≤0.1 µA at 21.0 V), SOD-123 surface-mount compatibility, and thermal performance (RθJA = 357 °C/W) for space-constrained PCB designs.

Technical Context

The BZT52C30-G operates as a single-die, cathode-banded Zener diode optimized for stable reverse-breakdown regulation under controlled test conditions (IZT = 2 mA). Its 30 V nominal Zener voltage falls within the 2.4–75 V family range, with temperature coefficient of +24.4 mV/°C and junction temperature range of –55 °C to +150 °C.

It exhibits 80 Ω dynamic impedance (ZZT) at 2 mA and 300 Ω knee impedance (ZZK) at 0.5 mA, supporting predictable clamping behavior in feedback loops and overvoltage protection circuits where low-current stability matters.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage (VZ)28.0–32.0 V @ IZT = 2 mA - defines precise regulation window for 3.3 V or 5 V rail-derived references
Power Dissipation (PD)350 mW - limits continuous Zener current to ~11.7 mA at 30 V, constraining use to low-power biasing
Zener Impedance (ZZT)80 Ω @ 2 mA - ensures minimal output voltage shift under small load transients in reference circuits
Leakage Current (IR)≤0.1 µA @ VR = 21.0 V - enables high-impedance sensing nodes without signal loading
Junction Temp Range (TJ)–55 °C to +150 °C - supports operation in automotive under-hood and industrial control environments
PackageSOD-123 - 2.7 × 1.6 × 1.1 mm footprint compatible with standard reflow profiles and J-STD-020 Level 1 moisture handling

Pinout & Package

Package: SOD-123 - surface-mount plastic case with cathode band marking; matte tin-plated leads, UL 94V-0 molding compound, 10.55 mg typical weight.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward conduction terminal / Zener cathode reference groundConnected to circuit ground or lower-potential node when used in reverse-bias regulation
CathodeZener breakdown terminal / regulated output nodeProvides stable 30 V reference when reverse-biased; marked by visible band on package body

Key Features

FeatureDesign Value
±5% Zener voltage toleranceEnables accurate voltage setting without post-assembly trimming in production-grade references
Low leakage current (0.1 µA)Preserves signal integrity in high-impedance sensor interfaces and battery-monitoring circuits
SOD-123 package with J-STD-020 Level 1 ratingSupports automated assembly without baking, reducing manufacturing overhead for high-volume PCBs
RoHS and halogen-free complianceMeets IPC-1752A reporting requirements and EU environmental directives for commercial and industrial shipments

Applications

Industrial Sensor Signal ConditioningUSB-C Power Delivery Reference

Use Scenario: Stabilizing excitation voltage for bridge-based pressure sensors in factory automation systems.

IC Role / Device Role / Timing Role: Zener diode providing fixed 30 V reference for op-amp biasing and ADC input scaling.

Use Value: Tight 5% tolerance and low 0.1 µA leakage prevent drift-induced measurement error across –40 °C to +85 °C operating range.

Use Scenario: Generating auxiliary 3.3 V reference from 5 V USB-C VBUS via resistor-Zener divider in PD controller support circuitry.

IC Role / Device Role / Timing Role: Voltage clamp regulating feedback node for buck converter ICs like MPQ4420HGJ.

Use Value: 80 Ω ZZT ensures <10 mV output variation under 1 mA load changes, meeting USB PD spec ripple limits.

Automotive Body Control Module (BCM)IoT Node Battery Monitoring

Use Scenario: Overvoltage protection for LIN bus transceiver supply rail in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: Clamping transient spikes above 32 V to safeguard communication ICs during load dump events.

Use Value: 350 mW PD and 150 °C TJMAX allow brief 100 ms surge absorption without thermal runaway.

Use Scenario: Monitoring Li-ion cell voltage via resistive divider into ultra-low-power MCU ADC with 1.8 V reference.

IC Role / Device Role / Timing Role: Providing stable 30 V Zener reference for high-ratio divider enabling 0–4.2 V full-scale measurement.

Use Value: 24.4 mV/°C tempco allows software compensation using onboard temperature sensor, improving SOC accuracy by ±0.5%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MMBZ5261B-7-FSame 30 V nominal, but ±5% tolerance only at IZT = 20 mA; higher ZZT = 170 ΩLess stable at low currents; unsuitable for microamp-level bias networksSelect BZT52C30-G when regulation must hold below 5 mA load
1SMA5929BT3G30 V nominal, ±5%, but in larger SMA package (4.5 × 2.7 mm); PD = 1.5 WHigher power handling, but incompatible with dense SOD-123 layoutsChoose BZT52C30-G for space-constrained boards where 350 mW suffices

Compared with MMBZ5261B-7-F and 1SMA5929BT3G, the BZT52C30-G delivers optimal trade-off of SOD-123 footprint, low-current regulation fidelity, and industrial temperature resilience - making it preferred for compact, battery-aware, and thermally demanding embedded designs.

Availability

BZT52C30-G is available at Aetrix Electronics and suitable for industrial sensor conditioning, USB-C power delivery reference design, and automotive body control module development requiring stable component supply and consistent parametric performance across production lots.

Supply support for BZT52C30-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete power devices, analog ICs, and ESD protection components, headquartered in Hsinchu Science Park.

The BZT52C series was designed specifically for cost-sensitive, high-reliability voltage reference and clamping applications in consumer, industrial, and automotive electronics - emphasizing tight tolerance, low leakage, and robust packaging.

FAQ

What is the nominal Zener voltage and tolerance of the BZT52C30-G?

The BZT52C30-G has a nominal Zener voltage of 30 V with a guaranteed tolerance of ±5%, meaning its actual breakdown voltage falls between 28.0 V and 32.0 V when tested at IZT = 2 mA. This tolerance is specified per JESD212 and verified during final test screening, ensuring consistent performance across production batches of the BZT52C30-G.

What is the maximum power dissipation rating for the BZT52C30-G?

The BZT52C30-G is rated for 350 mW maximum power dissipation at 25 °C ambient temperature. Derating begins above 25 °C at 2.8 mW/°C, reaching zero dissipation at 150 °C junction temperature. This rating applies strictly to the SOD-123 package mounted on FR-4 PCB with standard copper pad layout, as defined in the BZT52C30-G datasheet absolute maximum ratings table.

Does the BZT52C30-G have a specified temperature coefficient?

Yes, the BZT52C30-G has a typical temperature coefficient of +24.4 mV/°C, measured at IZTC = 2 mA. This positive coefficient means its Zener voltage increases linearly with rising junction temperature - a critical parameter for precision reference designs where thermal drift must be compensated. The value is confirmed in the BZT52C30-G electrical specifications table and validated across –55 °C to +125 °C.

What is the leakage current specification for the BZT52C30-G at reverse bias?

The BZT52C30-G specifies a maximum leakage current of 0.1 µA at VR = 21.0 V, measured at 25 °C. This low leakage supports high-impedance applications such as battery monitoring dividers and sensor bias networks where even nanoamp-level currents would introduce measurable error - a key differentiator of the BZT52C30-G versus general-purpose Zeners.

Is the BZT52C30-G RoHS and halogen-free compliant?

Yes, the BZT52C30-G is fully RoHS compliant and halogen-free per IEC 61249-2-21. All materials, including molding compound and matte tin plating, meet these environmental standards. Compliance is documented in Taiwan Semiconductor's material declarations and verified through third-party testing - confirming that the BZT52C30-G meets global regulatory requirements for commercial and industrial deployment.

BZT52C30-G Specifications

Product attributes
Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
SOD-123
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
30 V
Tolerance:
±5%
Power - Max:
350 mW
Impedance (Max) (Zzt):
80 Ohms
Current - Reverse Leakage @ Vr:
100 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If:
900 mV @ 10 mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-123

BZT52C30-G FAQ

1.How can I place an order for BZT52C30-G through Aetrix?

Please submit a Request for Quotation (RFQ) for BZT52C30-G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BZT52C30-G reliable?

The price and inventory of BZT52C30-G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZT52C30-G is usually 5 days.

3.What payment methods are accepted for BZT52C30-G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZT52C30-G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BZT52C30-G?

BZT52C30-G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BZT52C30-G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BZT52C30-G?

For technical support, including BZT52C30-G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZT52C30-G requirements.

6.How does Aetrix verify that BZT52C30-G is sourced from the original manufacturer or authorized distributors?

All BZT52C30-G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZT52C30-G meets industry standards.

7.What is the process for return or replacement of BZT52C30-G?

All BZT52C30-G units undergo pre-shipment inspection (PSI). If there is an issue with BZT52C30-G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BZT52C30-G part is unused and in its original packaging.

Return procedure for BZT52C30-G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BZT52C30-G Tags

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