Diodes Incorporated BZT52C3V3-13

Overview

BZT52C3V3-13 from Diodes Incorporated is a surface-mount silicon Zener diode with a nominal zener voltage of 3.3 V, 5 mA test current, 95 Ω maximum zener impedance at 5 mA, 500 mW power dissipation at TL = +75°C, and SOD123 package-used for precision voltage regulation and overvoltage protection in low-power analog sensor interfaces and microcontroller I/O rail clamping.

For engineers reviewing the BZT52C3V3-13 datasheet, BZT52C3V3-13 pinout, BZT52C3V3-13 application, or BZT52C3V3-13 equivalent, key selection criteria include zener voltage tolerance (±6.1% at 3.3 V), low reverse leakage (≤5.0 µA at 1.0 V), temperature coefficient (−3.5 mV/°C), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This Zener diode operates in reverse breakdown to maintain stable reference voltage under varying load and temperature conditions. Its planar die construction ensures consistent breakdown characteristics, while the SOD123 package supports automated placement and provides thermal resistance of 150 °C/W junction-to-lead.

The device delivers regulated 3.3 V output with ±0.2 V tolerance (3.1–3.5 V range) at 5 mA test current, exhibits low dynamic impedance (95 Ω), and maintains <5.0 µA reverse current at 1.0 V-enabling accurate voltage clamping in 3.3 V logic domains without excessive power loss.

Key Specifications

Pinout & Package

Package: SOD123 - molded plastic case, cathode band marking, matte tin-plated alloy 42 leadframe, UL 94V-0 rated, 0.010 g weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with MMBZ5226BS-7-F and BZX84-C3V3, BZT52C3V3-13 offers superior thermal performance via SOD123's lower R_θJL (150 °C/W), AEC-Q101 validation for harsh environments, and tighter production lot control-making it optimal for industrial and automotive voltage reference and clamping where long-term stability matters.

Availability

BZT52C3V3-13 is available at Aetrix Electronics and suitable for industrial sensor interfaces, automotive body control modules, and 3.3 V microcontroller I/O protection requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for BZT52C3V3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BZT52 series belongs to Diodes' general-purpose Zener diode product line, engineered for reliable voltage regulation and transient suppression in cost-sensitive, high-volume applications including automotive electronics, industrial controls, and consumer power management.

FAQ

What is the maximum reverse voltage (V_R) before significant leakage occurs in BZT52C3V3-13?

At V_R = 1.0 V, reverse current is guaranteed ≤5.0 µA per datasheet specifications. Leakage rises to ≤150 µA at V_R = 2.0 V, but remains well below breakdown threshold. This low leakage enables use in high-impedance bias networks without signal degradation.

Can BZT52C3V3-13 be used in place of a 3.3 V voltage reference IC like REF3033?

No-it is not a precision reference IC. While its 3.3 V zener voltage is useful for clamping and coarse regulation, it lacks the initial accuracy (±0.2%), low tempco (±5 ppm/°C), and load regulation (<0.01%/mA) of REF3033. Use only where ±6.1% tolerance and −3.5 mV/°C drift are acceptable.

Is the SOD123 package of BZT52C3V3-13 compatible with standard pick-and-place equipment?

Yes-the SOD123 outline meets IPC-7351B standards with 0.57 mm lead pitch, 1.55 mm body width, and defined land pattern (X = 0.900 mm, X1 = 4.050 mm, Y = 0.950 mm). It is explicitly qualified for automated assembly per datasheet Feature list and supported by Diodes' package outline documentation.

Does BZT52C3V3-13 require derating when mounted on FR-4 with minimal copper area?

Yes-its 370 mW ambient-rated dissipation assumes a 1-inch² copper pad. With minimal copper, power must be derated per Fig. 1: at +70°C ambient, maximum allowable power drops to ~250 mW. For full 500 mW operation, thermal relief via internal layer copper or thermal vias is required.