Taiwan Semiconductor Corporation BZT52C3V3-G RHG

Overview

BZT52C3V3-G from Taiwan Semiconductor is a 3.3 V ±5% tolerance surface-mount Zener diode in SOD-123 package, rated for 350 mW power dissipation, with 95 Ω typical dynamic impedance at 5 mA test current and 5 µA maximum leakage current at 1.0 V reverse bias - used for precision voltage regulation and reference in low-power analog circuits.

For engineers reviewing the BZT52C3V3-G datasheet, BZT52C3V3-G pinout, BZT52C3V3-G application, or BZT52C3V3-G equivalent, key selection criteria include nominal Zener voltage (3.3 V), tight 5% tolerance, SOD-123 footprint compatibility, thermal resistance (357 °C/W), and junction temperature range (–55 °C to +150 °C).

Technical Context

The BZT52C3V3-G operates as a single-die, cathode-banded Zener diode optimized for stable voltage clamping and reference generation in DC bias networks. It exhibits a –3.5 mV/°C temperature coefficient and maintains regulation under 5 mA test current with ≤95 Ω dynamic impedance.

Its SOD-123 package supports reflow soldering per J-STD-002, meets UL 94V-0 flammability rating, and complies with RoHS and IEC 61249-2-21 halogen-free requirements - enabling use in space-constrained, thermally managed consumer and industrial PCBs.

Key Specifications

Pinout & Package

Package: SOD-123 - surface-mount plastic case with matte tin-plated leads, polarity indicated by cathode band, weight ≈10.55 mg.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with MMBZ5226BS-7-F and 1N4728A, the BZT52C3V3-G delivers tighter voltage control at its specified 5 mA operating point, higher power headroom, and SOD-123 compatibility - making it optimal for modern high-density, low-power analog designs requiring repeatable 3.3 V regulation.

Availability

BZT52C3V3-G is available at Aetrix Electronics and suitable for USB peripheral power regulation, microcontroller reset circuits, and IoT sensor signal conditioning requiring stable component supply, consistent parametric performance, and full RoHS/halogen-free compliance.

Supply support for BZT52C3V3-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete devices, analog ICs, and power management solutions for industrial, computing, and consumer markets.

The BZT52C series is designed for precision voltage reference and regulation in compact, surface-mount applications - emphasizing tight tolerance, thermal stability, and manufacturability in high-volume SMT lines.

FAQ

What is the nominal Zener voltage and tolerance of the BZT52C3V3-G?

The BZT52C3V3-G has a nominal Zener voltage of 3.3 V with a ±5% tolerance, meaning its actual breakdown voltage falls between 3.1 V and 3.5 V at 5 mA test current. This specification is verified per Taiwan Semiconductor's C2007 datasheet revision and applies strictly under TA = 25°C conditions. The BZT52C3V3-G achieves this tolerance without external trimming, supporting consistent performance across production batches.

What package type does the BZT52C3V3-G use, and what are its key mechanical features?

The BZT52C3V3-G uses the SOD-123 surface-mount package, featuring matte tin-plated leads compliant with J-STD-002 solderability standards, UL 94V-0 flammability rating, and moisture sensitivity level 1 per J-STD-020. Its cathode band clearly indicates polarity, and the device weighs approximately 10.55 mg. The BZT52C3V3-G's SOD-123 outline allows direct integration into high-density PCB layouts without requiring baking or special handling.

What is the maximum power dissipation and thermal resistance of the BZT52C3V3-G?

The BZT52C3V3-G has a maximum power dissipation of 350 mW at TA = 25°C and a junction-to-ambient thermal resistance (R_θJA) of 357 °C/W. This means that under natural convection, a 350 mW power load raises the junction temperature by ~125 °C above ambient - staying within its 150 °C maximum rating only if ambient remains below +25 °C. Derating is required above 25°C, per the power derating curve in the BZT52C3V3-G datasheet.

How does the BZT52C3V3-G perform in terms of leakage current and dynamic impedance?

The BZT52C3V3-G specifies a maximum leakage current of 5 µA at 1.0 V reverse bias and a typical dynamic impedance of 95 Ω at 5 mA test current. These values ensure minimal quiescent current draw in standby mode and stable regulation under small-signal load variations. The BZT52C3V3-G's low Z_ZT and tight I_R make it suitable for precision biasing in op-amp and ADC reference circuits where noise and drift must be minimized.

Is the BZT52C3V3-G RoHS and halogen-free compliant?

Yes, the BZT52C3V3-G is fully RoHS compliant and halogen-free per IEC 61249-2-21. Taiwan Semiconductor certifies that no brominated flame retardants, chlorine, fluorine, iodine, or bromine compounds exceed threshold limits in the molding compound or plating. This compliance is documented in the BZT52C3V3-G product specification sheet (Version C2007) and supports use in EU, China, and Japan regulatory environments without restriction.