Diodes Incorporated BZT52C3V6-13-F

Overview

BZT52C3V6-13-F from Diodes Incorporated is a surface-mount Zener diode with nominal 3.6 V zener voltage, 5 mA test current, 90 Ω maximum zener impedance at 1 kHz, 500 mW power dissipation at TL = +75°C, and SOD123 package - used for precision voltage regulation and overvoltage protection in low-power analog sensor interfaces and microcontroller I/O rail clamping.

For engineers reviewing the BZT52C3V6-13-F datasheet, BZT52C3V6-13-F pinout, BZT52C3V6-13-F application, or BZT52C3V6-13-F equivalent, key selection criteria include zener voltage tolerance (±5.6%), temperature coefficient (−3.5 mV/°C), reverse leakage (≤5 µA @ 1.0 V), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This Zener diode operates in reverse breakdown mode to maintain stable reference voltage under varying load and temperature conditions. Its planar die construction ensures consistent breakdown characteristics and low dynamic impedance across the 3.4–3.8 V zener voltage range at 5 mA test current.

The device exhibits a negative temperature coefficient of −3.5 mV/°C, enabling predictable drift compensation in temperature-sensitive references. It is rated for 370 mW power dissipation at TA = +25°C and derates linearly above +25°C per the published thermal resistance (RθJA = 338 °C/W).

Key Specifications

Pinout & Package

Two-terminal SOD123 package: anode and cathode terminals identified by molded cathode band on the body. Designed for automated assembly with matte tin-plated alloy 42 leadframe and UL 94V-0 mold compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Compared with MMBZ5226BS-7-F and BZX84-C3V6, BZT52C3V6-13-F offers superior thermal robustness (500 mW vs. ≤350 mW), automotive qualification, and tighter impedance control - making it optimal for mission-critical 3.3 V rail stabilization where reliability and power handling outweigh footprint constraints.

Availability

BZT52C3V6-13-F is available at Aetrix Electronics and suitable for automotive body control modules, industrial sensor signal conditioning, and USB interface protection requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for BZT52C3V6-13-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for automotive, industrial, and consumer markets.

The BZT52 series belongs to Diodes' general-purpose Zener diode product line, engineered for medium-current voltage regulation and transient suppression in space- and cost-constrained surface-mount applications.

FAQ

What is the maximum reverse voltage (V_R) that BZT52C3V6-13-F can withstand before breakdown?

The device is specified to maintain ≤5 µA reverse leakage at V_R = 1.0 V. Breakdown occurs at its nominal zener voltage of 3.6 V (range 3.4–3.8 V) when reverse biased at 5 mA test current. It is not rated for blocking voltages above its V_Z range - operation beyond this risks uncontrolled conduction and thermal runaway.

Is BZT52C3V6-13-F suitable for bidirectional ESD protection?

No - it is a single Zener diode with unidirectional breakdown (cathode-to-anode). For bidirectional ESD clamping, two devices must be connected anode-to-anode or a dedicated TVS array like D3V3F4U6DP-7 must be used. Its 3.6 V V_Z makes it appropriate only for positive-going overvoltage suppression on grounded-line configurations.

How does the −3.5 mV/°C temperature coefficient affect circuit design?

This negative coefficient means V_Z decreases by 3.5 mV per degree Celsius rise. In a 3.3 V system, a 50°C ambient shift causes ~175 mV drop - requiring either temperature compensation in feedback loops or selection of a higher nominal V_Z (e.g., 3.9 V) if stability over wide temperature ranges is critical.

Can BZT52C3V6-13-F replace BZT52C3V3 in an existing design?

Only if the circuit tolerates a 0.3 V higher clamping voltage and reduced reverse leakage margin. BZT52C3V3 has V_Z = 3.3 V (3.1–3.5 V), 5 µA I_R @ 1.0 V, and same package/power specs. Substitution may cause premature clamping or exceed downstream device absolute maximum ratings - validation of voltage margins and thermal rise is mandatory.