Diodes Incorporated BZT52C4V7S-7

Overview

BZT52C4V7S-7 from Diodes Incorporated is a surface-mount Zener diode with a nominal zener voltage of 4.7 V, 5 mA test current, 80 Ω maximum zener impedance at 1 kHz, 2 µA maximum reverse leakage at 2.0 V, and ±0.2 V voltage tolerance. It operates in SOD323 package and is used for precision voltage regulation and overvoltage protection in low-power analog circuits.

For engineers reviewing the BZT52C4V7S-7 datasheet, BZT52C4V7S-7 pinout, BZT52C4V7S-7 application, or BZT52C4V7S-7 equivalent, key selection criteria include zener voltage accuracy, low dynamic impedance, thermal stability (−3.5 to 0 mV/°C tempco), RoHS/Green compliance, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This device functions as a two-terminal voltage reference diode operating in reverse breakdown mode. Its planar die construction ensures stable zener characteristics across temperature, with a −3.5 to 0 mV/°C temperature coefficient and 200 mW power dissipation rating at 25°C ambient.

The SOD323 package supports automated assembly and provides 625 °C/W junction-to-ambient thermal resistance. Reverse leakage remains ≤2 µA at VR = 2.0 V, enabling low-quiescent-current biasing in sensor interfaces and power-supply feedback paths.

Key Specifications

Pinout & Package

SOD323 package: 2-terminal surface-mount device with cathode band marking; terminals are anode (unmarked end) and cathode (banded end).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with MMBZ5229BS-7-F and BZX84-C4V7, BZT52C4V7S-7 offers tighter voltage tolerance (±0.3 V vs ±0.4 V), lower zener impedance (80 Ω vs 90 Ω), and AEC-Q101 qualification-making it optimal for automotive and high-reliability industrial voltage reference roles.

Availability

BZT52C4V7S-7 is available at Aetrix Electronics and suitable for automotive sensor biasing, industrial analog signal conditioning, and consumer power management requiring stable component supply and long-term lifecycle support.

Supply support for BZT52C4V7S-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BZT52C series belongs to Diodes' high-reliability Zener diode product line, engineered specifically for precision voltage regulation and overvoltage protection in automotive, industrial, and consumer applications demanding AEC-Q101 qualification and Green compliance.

FAQ

What is the maximum power dissipation for BZT52C4V7S-7 at 70°C ambient?

At 70°C ambient, the device's power dissipation must be derated linearly from 200 mW at 25°C using the 625 °C/W thermal resistance. The allowable power is 200 mW × (1 − (70 − 25)/625) = 140 mW. This ensures junction temperature stays below 150°C under continuous operation.

Is BZT52C4V7S-7 suitable for use in reverse-biased ESD protection circuits?

Yes - its 2 µA reverse leakage at 2.0 V and fast response in breakdown make it appropriate for low-energy ESD clamping. However, for IEC 61000-4-2 Level 4 (15 kV air) protection, a dedicated TVS diode with higher peak pulse power is recommended instead.

Does the SOD323 package support reflow soldering per JEDEC J-STD-020?

Yes - the device is rated Moisture Sensitivity Level 1, meaning it can be subjected to standard Pb-free reflow profiles (peak 260°C) without baking. Its matte tin finish ensures reliable solder wetting and compatibility with both leaded and lead-free processes.

How does the temperature coefficient affect regulation accuracy over −40°C to +85°C?

With a tempco of −3.5 to 0 mV/°C, the worst-case voltage shift over 125°C ΔT is |−3.5 mV/°C × 125°C| = 437.5 mV. Thus, regulation accuracy degrades from ±0.2 V at 25°C to ±0.64 V across that full range - acceptable for non-critical biasing but insufficient for metrology-grade references.