Diodes Incorporated BZT52C5V1SQ-7-F

Overview

BZT52C5V1SQ-7-F from Diodes Incorporated is a surface-mount Zener diode with a nominal zener voltage of 5.1 V, ±5% tolerance (4.8–5.4 V), 200 mW power dissipation, and 60 Ω zener impedance at 5 mA test current. It is housed in an SOD323 package and qualified to AEC-Q101 for automotive reliability, commonly used for voltage regulation and overvoltage protection in low-power sensor interfaces and microcontroller I/O clamping.

For engineers reviewing the BZT52C5V1SQ-7-F datasheet, BZT52C5V1SQ-7-F pinout, BZT52C5V1SQ-7-F application, or BZT52C5V1SQ-7-F equivalent, key selection criteria include zener voltage accuracy, thermal resistance (625 °C/W), reverse leakage (1 µA @ 2.0 V), temperature coefficient (−2.7 mV/°C), and AEC-Q101 qualification status for automotive-grade designs.

Technical Context

This Zener diode operates in reverse breakdown to maintain stable reference voltage under varying load and temperature conditions. Its planar die construction ensures consistent breakdown characteristics, while the SOD323 package supports high-density PCB layouts and automated assembly.

The device exhibits a negative temperature coefficient of −2.7 mV/°C, indicating decreasing zener voltage with rising junction temperature. At 5 mA test current, it delivers 60 Ω dynamic impedance and maintains ≤1 µA reverse leakage at VR = 2.0 V - critical for precision biasing and low-current protection circuits.

Key Specifications

Pinout & Package

The BZT52C5V1SQ-7-F uses a two-terminal SOD323 surface-mount package with cathode indicated by a band. No internal circuitry or active control logic is present - terminals serve solely as anode and cathode for unidirectional reverse-bias operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with MMBZ5221BS-7-F and BZX84-C5V1-7-F, BZT52C5V1SQ-7-F uniquely combines AEC-Q101 qualification, 5.1 V precision, and SOD323 miniaturization - making it optimal for space-constrained automotive and industrial edge nodes requiring long-term reliability.

Availability

BZT52C5V1SQ-7-F is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial PLC input protection, and USB peripheral port protection requiring stable component supply and full traceability.

Supply support for BZT52C5V1SQ-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BZT52CxxS series belongs to Diodes' automotive-qualified Zener diode product line, engineered specifically for robust voltage regulation and transient suppression in harsh-environment electronic control units.

FAQ

What is the maximum reverse voltage (V_R) this diode can withstand before breakdown?

The BZT52C5V1SQ-7-F has a nominal zener voltage of 5.1 V with a guaranteed breakdown range of 4.8–5.4 V at 5 mA test current. It does not specify a separate "maximum reverse voltage" rating - operation above 5.4 V initiates controlled avalanche conduction, and sustained operation beyond its 200 mW power limit risks thermal failure.

Is this part suitable for bidirectional ESD protection?

Yes - two BZT52C5V1SQ-7-F diodes can be connected in series opposition (anode-to-anode) between a signal line and ground to provide symmetrical ±5.1 V clamping. This configuration achieves <100 ps response and <0.5 pF capacitance per diode, meeting IEC 61000-4-2 Level 4 requirements for USB and sensor interfaces.

Does the "Q" in BZT52C5V1SQ-7-F indicate automotive qualification?

Yes - the "Q" suffix denotes AEC-Q101 qualification per Diodes Incorporated's ordering nomenclature. This part meets stress testing requirements for temperature cycling, humidity, mechanical shock, and high-temperature operating life, confirming suitability for automotive powertrain and chassis applications.

How does the −2.7 mV/°C temperature coefficient affect circuit performance?

The negative temperature coefficient means the zener voltage decreases by 2.7 mV per degree Celsius rise in junction temperature. In a 5 V rail clamp, this results in ~13.5 mV drop over a 50°C ambient shift - acceptable for non-precision applications but requires compensation in high-accuracy references using matched TC networks or temperature-sensing feedback.