Diodes Incorporated BZT52C6V2-13

Overview

BZT52C6V2-13 from Diodes Incorporated is a surface-mount 6.2 V Zener diode in SOD123 package, rated for 500 mW power dissipation at TL = +75°C and 370 mW at TA = +25°C, with 10 Ω typical zener impedance at 5 mA test current, used for precision voltage regulation and overvoltage protection in low-power analog circuits.

For engineers reviewing the BZT52C6V2-13 datasheet, BZT52C6V2-13 pinout, BZT52C6V2-13 application, or BZT52C6V2-13 equivalent, key selection criteria include zener voltage tolerance (±6.5% at 6.2 V), temperature coefficient (+0.4 mV/°C), reverse leakage (3.7 µA at 4.0 V), and SOD123 thermal resistance (RθJA = 338 °C/W).

Technical Context

This Zener diode operates in reverse breakdown mode to maintain stable reference voltage under varying load and temperature conditions. Its planar die construction ensures consistent breakdown characteristics and low dynamic impedance (10 Ω @ 1 kHz, 5 mA), supporting accurate voltage clamping in feedback loops and sensing circuits.

The device exhibits a positive temperature coefficient of +0.4 mV/°C near 6.2 V, enabling predictable drift compensation in temperature-sensitive references. It is qualified to AEC-Q101 for automotive-grade reliability and features matte tin-plated alloy 42 leads for robust solderability per MIL-STD-202.

Key Specifications

Pinout & Package

Package: SOD123 - surface-mount plastic case with cathode band marking, 0.010 g weight, UL 94V-0 flammability rating, and moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Compared with MMBZ5234BS-7-F and 1N4735A, BZT52C6V2-13 offers optimal balance of SMT compatibility, AEC-Q101 qualification, and thermal performance in compact SOD123 form - making it preferred for volume automotive and industrial PCBs requiring zero rework risk and traceable green sourcing.

Availability

BZT52C6V2-13 is available at Aetrix Electronics and suitable for automotive body control modules, industrial sensor signal conditioning, and USB-compliant peripheral power management requiring stable component supply with full RoHS and AEC-Q101 compliance.

Supply support for BZT52C6V2-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for automotive, industrial, and consumer markets.

BZT52C6V2-13 belongs to the BZT52C series of general-purpose Zener diodes designed for medium-current voltage regulation and transient suppression in cost-sensitive, high-volume SMT applications.

FAQ

What is the maximum reverse voltage (V_R) that BZT52C6V2-13 can withstand before breakdown?

The device breaks down at nominal 6.2 V, with guaranteed range 5.8–6.6 V at 5 mA test current. At V_R = 4.0 V, reverse leakage is 3.7 µA - meaning it remains effectively non-conductive below ~5.5 V. No absolute "maximum non-breakdown voltage" is specified; operation below V_Z(min) = 5.8 V ensures safe blocking.

Can BZT52C6V2-13 be used in place of a 6.8 V Zener like BZT52C6V8?

No - its 6.2 V nominal zener voltage differs by 0.6 V (≈9.7%) from BZT52C6V8's 6.8 V, exceeding typical reference tolerance budgets. Circuit gain, offset, or regulation thresholds would shift significantly; substitution requires recalculating bias networks and verifying loop stability under worst-case V_Z spread.

Is the SOD123 package compatible with standard reflow profiles for lead-free soldering?

Yes - the device is rated for moisture sensitivity level 1 per J-STD-020 and uses matte tin plating qualified to MIL-STD-202 Method 208. It withstands peak reflow temperatures up to 260°C and is fully compatible with IPC/JEDEC J-STD-020D standard lead-free profiles without baking or special handling.

Does BZT52C6V2-13 have a specified junction capacitance value?

No specific C_J is listed in DS18004 Rev. 38 for this variant, but Figure 5 shows typical total capacitance for 6.2 V devices is ~2.5 pF at V_R = 1 V and f = 1 MHz. This low value confirms suitability for high-frequency clamp and reference applications without signal coupling.