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Taiwan Semiconductor Corporation BZT52C6V2-G

Part No.:
BZT52C6V2-G
Manufacturer:
Taiwan Semiconductor Corporation
Category:
Single Zener Diodes
Package:
SOD-123
Datasheet:
AetrixBZT52C6V2-G.pdf
Description:
DIODE ZENER 6.2V 350MW SOD123
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,101

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Product details

Overview

BZT52C6V2-G from Taiwan Semiconductor is a 6.2 V ±5% tolerance surface-mount Zener diode in SOD-123 package, rated for 350 mW power dissipation and 150 °C maximum junction temperature, with 10 Ω typical dynamic impedance at 5 mA test current and 4.0 mV/°C temperature coefficient - used for precision voltage regulation and reference in low-power analog circuits.

For engineers reviewing the BZT52C6V2-G datasheet, BZT52C6V2-G pinout, BZT52C6V2-G application, or BZT52C6V2-G equivalent, key selection considerations include its 5.8–6.6 V zener voltage range, 10 Ω zener impedance at IZT = 5 mA, 3.7 V reverse leakage threshold, cathode-band polarity marking, and SOD-123 footprint compatibility with automated assembly.

Technical Context

The BZT52C6V2-G operates as a single-die, silicon planar Zener diode optimized for stable voltage clamping and reference generation in DC bias networks. Its 10 Ω dynamic impedance (ZZT) at 5 mA and 150 °C thermal limit support reliable operation in ambient temperatures up to +125 °C with derated power.

It features a nominal 6.2 V breakdown voltage with ±5% tolerance, 0.4 mV/°C temperature coefficient at 5 mA, and 3.7 V reverse leakage threshold (IR ≤ 3 µA at VR = 3.7 V), enabling predictable regulation across industrial temperature ranges.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage (VZ)5.8–6.6 V (±5% tolerance at IZT = 5 mA; enables precise 6.2 V reference with tight production spread)
Power Dissipation (PD)350 mW (max continuous power at TA = 25 °C; requires thermal derating above 25 °C per 357 °C/W RθJA)
Zener Impedance (ZZT)10 Ω (typical at IZT = 5 mA; ensures low AC impedance for stable regulation under small-signal load variation)
Reverse Leakage (IR)≤3 µA at VR = 3.7 V (low standby current in high-impedance bias networks)
Temperature Coefficient+0.4 mV/°C (at IZTC = 5 mA; positive TC supports compensation in multi-diode references)
Junction Temperature−55 to +150 °C (supports operation in extended industrial environments without thermal shutdown)

Pinout & Package

Package: SOD-123 - surface-mount plastic case with matte tin-plated leads, J-STD-002 solderable, UL 94V-0 rated molding compound, cathode indicated by band, weight ≈10.55 mg.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward conduction terminal / Zener cathode reference groundConnected to lower-potential node in shunt regulation; forms reference return path for bias current
CathodeZener breakdown terminal / voltage clamp inputConnected to regulated node; absorbs excess current when input exceeds 6.2 V, maintaining stable output

Key Features

FeatureDesign Value
5% Zener voltage toleranceEnsures consistent 6.2 V regulation across production lots without post-assembly trimming
SOD-123 surface-mount packageEnables high-density PCB layout and compatibility with standard 0.95 mm pitch reflow profiles
150 °C maximum junction temperatureSupports reliable operation in enclosed enclosures or near heat-generating components
Moisture sensitivity level 1Eliminates bake requirements before reflow, reducing manufacturing overhead and moisture-related defects

Applications

Low-Power Voltage ReferenceOvervoltage Clamp in Sensor Interface

Use Scenario: Providing stable 6.2 V reference for ADC biasing or op-amp feedback networks in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: Shunt voltage reference diode establishing fixed potential for analog signal conditioning circuitry.

Use Value: 10 Ω ZZT minimizes reference drift under varying load current, while ±5% tolerance ensures predictable system-level accuracy without calibration.

Use Scenario: Protecting microcontroller GPIO pins from transient overvoltage during ESD events in environmental sensor modules.

IC Role / Device Role / Timing Role: Fast-acting shunt clamp limiting input voltage to ≤6.6 V during surge conditions.

Use Value: 350 mW PD and 150 °C TJMAX allow brief energy absorption without thermal failure, complementing TVS devices in layered protection schemes.

DC Bias Network StabilizationLED Current Regulation

Use Scenario: Setting bias point for discrete transistor amplifiers in audio preamplifier stages operating from 9 V rails.

IC Role / Device Role / Timing Role: Zener-based voltage divider element defining emitter/base bias voltages.

Use Value: +0.4 mV/°C TC partially offsets transistor VBE drift, improving thermal stability of quiescent current over −40 to +85 °C.

Use Scenario: Controlling forward current in indicator LED strings powered from unregulated 12 V supplies in industrial HMI panels.

IC Role / Device Role / Timing Role: Series-shunt regulator component establishing constant voltage drop across current-setting resistor.

Use Value: Low 3 µA leakage at 3.7 V prevents unintended LED glow in standby mode, enhancing power efficiency in always-on displays.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MMBZ5234BS-7-FZener voltage 6.0–6.4 V (±3%), 200 mW PD, SOT-23 packageLower power rating and smaller footprint; higher thermal resistance limits sustained current handlingSelect when board space is constrained and peak power < 200 mW; verify thermal margin in sealed enclosures
1N4735A6.2 V ±5%, 1 W PD, DO-41 through-hole packageHigher power capability but incompatible with SMT assembly; larger thermal mass delays response to transientsSelect for prototyping or high-reliability through-hole designs where manual rework is acceptable and >350 mW clamping is required

Compared with MMBZ5234BS-7-F and 1N4735A, the BZT52C6V2-G delivers optimal balance of SMT compatibility, 350 mW power handling, and tight 6.2 V regulation - making it preferred for volume-manufactured industrial control boards requiring automated assembly and thermal robustness.

Availability

BZT52C6V2-G is available at Aetrix Electronics and suitable for low-power voltage reference, overvoltage clamp, and DC bias network stabilization requiring stable component supply and RoHS-compliant sourcing.

Supply support for BZT52C6V2-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete power devices, analog ICs, and protection components for industrial and consumer markets.

The BZT52C series is part of TSC's general-purpose Zener diode product line, engineered for cost-effective, high-yield voltage regulation in space-constrained SMT applications across automotive body electronics, industrial sensors, and power supply feedback loops.

FAQ

What is the exact zener voltage range specified for BZT52C6V2-G?

The BZT52C6V2-G has a guaranteed zener voltage range of 5.8 V to 6.6 V at test current IZT = 5 mA, reflecting its ±5% tolerance around the nominal 6.2 V rating. This range is verified per Taiwan Semiconductor's C2007 specification sheet and applies across the full operating temperature range of −55 to +150 °C.

Does BZT52C6V2-G support reflow soldering without moisture preconditioning?

Yes, the BZT52C6V2-G is rated at Moisture Sensitivity Level 1 per J-STD-020, meaning it may be stored indefinitely at ≤30 °C/60% RH and placed directly into reflow without baking. This eliminates moisture-related popcorning risk and simplifies SMT line integration for high-volume production.

What is the maximum reverse leakage current for BZT52C6V2-G and at what voltage is it measured?

The BZT52C6V2-G exhibits ≤3 µA reverse leakage current at VR = 3.7 V, as specified in the electrical characteristics table. This low leakage ensures minimal current draw in high-impedance bias networks and prevents unintended activation in standby-mode circuits.

Can BZT52C6V2-G be used as a substitute for BZT52C6V8-G in a 6.8 V reference design?

No - the BZT52C6V2-G is not a functional substitute for BZT52C6V8-G, as its zener voltage range (5.8–6.6 V) does not overlap with the BZT52C6V8-G's range (6.4–7.2 V). Using BZT52C6V2-G in a 6.8 V design would result in under-regulation and potential circuit malfunction.

Is the SOD-123 package of BZT52C6V2-G compatible with IPC-7351B standard land patterns?

Yes, the SOD-123 package of BZT52C6V2-G aligns with IPC-7351B generic land pattern for DO-213AA (SOD-123), with recommended pad dimensions of 1.2 × 0.8 mm and 0.95 mm center-to-center spacing. Taiwan Semiconductor's package outline drawing confirms compliance with this standard for reliable solder joint formation.

BZT52C6V2-G Specifications

Product attributes
Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
SOD-123
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
6.2 V
Tolerance:
±5%
Power - Max:
350 mW
Impedance (Max) (Zzt):
10 Ohms
Current - Reverse Leakage @ Vr:
3 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If:
900 mV @ 10 mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-123

BZT52C6V2-G FAQ

1.How can I place an order for BZT52C6V2-G through Aetrix?

Please submit a Request for Quotation (RFQ) for BZT52C6V2-G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BZT52C6V2-G reliable?

The price and inventory of BZT52C6V2-G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZT52C6V2-G is usually 5 days.

3.What payment methods are accepted for BZT52C6V2-G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZT52C6V2-G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BZT52C6V2-G?

BZT52C6V2-G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BZT52C6V2-G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BZT52C6V2-G?

For technical support, including BZT52C6V2-G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZT52C6V2-G requirements.

6.How does Aetrix verify that BZT52C6V2-G is sourced from the original manufacturer or authorized distributors?

All BZT52C6V2-G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZT52C6V2-G meets industry standards.

7.What is the process for return or replacement of BZT52C6V2-G?

All BZT52C6V2-G units undergo pre-shipment inspection (PSI). If there is an issue with BZT52C6V2-G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BZT52C6V2-G part is unused and in its original packaging.

Return procedure for BZT52C6V2-G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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