Diodes Incorporated BZT52C6V8S-7-F

Overview

BZT52C6V8S-7-F from Diodes Incorporated is a surface-mount Zener diode with nominal 6.8 V zener voltage (6.4–7.2 V range), 5 mA test current, 15 Ω dynamic impedance at 5 mA, 1.0 µA maximum reverse leakage at 4.0 V, and ±1.2 mV/°C temperature coefficient. It operates in SOD323 package and delivers stable voltage reference in low-power regulation and overvoltage protection circuits.

For engineers reviewing the BZT52C6V8S-7-F datasheet, BZT52C6V8S-7-F pinout, BZT52C6V8S-7-F application, or BZT52C6V8S-7-F equivalent, key selection criteria include zener voltage tolerance, thermal coefficient, junction-to-ambient thermal resistance (625 °C/W), power dissipation (200 mW), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This Zener diode functions as a precision voltage reference and shunt regulator by maintaining a stable reverse-biased breakdown voltage across its terminals. Its planar die construction ensures consistent breakdown characteristics, while the SOD323 package supports high-density PCB layouts and automated assembly.

The device exhibits a typical zener voltage temperature coefficient of +1.2 mV/°C and achieves 15 Ω zener impedance at 5 mA test current, enabling low-noise regulation in feedback loops and voltage-clamping applications where stability under varying load and temperature is critical.

Key Specifications

Pinout & Package

SOD323 is a two-terminal surface-mount package with anode and cathode leads formed from alloy 42 leadframe, cathode identified by a visible band on the top surface. The package complies with JEDEC MO-213AA and supports reflow soldering per J-STD-020 Level 1 moisture sensitivity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with MMSZ5235B-7-F and 1N4734A, BZT52C6V8S-7-F offers superior low-current regulation (15 Ω @ 5 mA), AEC-Q101 qualification, and SOD323 footprint compatibility with high-density automotive PCBs-making it optimal for modern embedded voltage reference and clamping roles where size, reliability, and precision at low bias matter.

Availability

BZT52C6V8S-7-F is available at Aetrix Electronics and suitable for automotive sensor biasing, USB port overvoltage protection, and industrial PLC input conditioning requiring stable component supply and full traceability.

Supply support for BZT52C6V8S-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets with ISO/TS 16949 and ISO 14001 certifications.

The BZT52C series belongs to Diodes' AEC-Q101-qualified Zener diode portfolio, engineered specifically for precision voltage reference and transient suppression in space-constrained, thermally demanding automotive and industrial control environments.

FAQ

What is the maximum reverse voltage before breakdown for BZT52C6V8S-7-F?

The BZT52C6V8S-7-F has a nominal zener voltage of 6.8 V with a guaranteed range of 6.4 V to 7.2 V at 5 mA test current. Breakdown begins within this range; no distinct "maximum reverse voltage before breakdown" is specified-it is a graded transition defined by the zener voltage tolerance and test current condition.

Is BZT52C6V8S-7-F suitable for ESD protection in USB 2.0 interfaces?

Yes-its 6.8 V zener voltage clamps transients below 7.2 V, and its 15 Ω dynamic impedance enables fast response to ESD events. However, dedicated TVS diodes (e.g., D3V3M1U) offer lower clamping voltage and higher surge current capability; BZT52C6V8S-7-F is best suited for secondary or low-energy clamping in conjunction with primary protection.

Does BZT52C6V8S-7-F require derating at elevated ambient temperatures?

Yes-its 200 mW power rating applies only at +25 °C ambient. Derating follows the linear curve in Figure 1: above +25 °C, allowable power decreases by 0.32 mW/°C (based on R_θJA = 625 °C/W), reaching zero at +150 °C junction temperature. Board layout and copper area significantly affect actual derating behavior.

How does the +1.2 mV/°C temperature coefficient impact accuracy over −40 to +125 °C?

Over this 165 °C range, the zener voltage shifts by up to +198 µV/°C × 165 °C ≈ +0.207 V, resulting in a worst-case V_Z of ~7.01 V at +125 °C. Combined with initial tolerance (±0.4 V), total variation remains within ±3%-acceptable for non-critical bias and clamping, but insufficient for metrology-grade references.