Taiwan Semiconductor Corporation BZT52C75

Overview

BZT52C75 from Taiwan Semiconductor is a surface-mount 75 V ±5% tolerance Zener diode in SOD-123F package, rated for 500 mW power dissipation and tested at 2 mA zener current, used for precision voltage reference and low-power stabilization in DC/DC converters and adapters.

For engineers reviewing the BZT52C75 datasheet, BZT52C75 pinout, BZT52C75 application, or BZT52C75 equivalent, key selection criteria include its nominal zener voltage (75.0 V), tight ±5% tolerance, low leakage current (≤0.045 µA at 52.5 V), and thermal resistance (350 °C/W) - all critical for stable biasing and reference accuracy in compact power designs.

Technical Context

The BZT52C75 operates as a single-die, cathode-banded Zener diode with reverse breakdown behavior defined under pulsed 30 ms test conditions. Its zener impedance is specified at 255 Ω (max) at IZT = 2 mA and 470 Ω (max) at IZK = 0.5 mA, reflecting higher dynamic resistance typical of high-voltage Zeners.

It features a maximum junction temperature of +150 °C and storage range from –65 °C to +150 °C, with moisture sensitivity level 1 per J-STD-020. The SOD-123F package uses matte tin-plated leads and meets UL 94 V-0 flammability rating.

Key Specifications

Pinout & Package

Package: SOD-123F - surface-mount, single-anode/cathode configuration with cathode band marking; dimensions: 3.3–3.9 mm length × 1.5–1.7 mm width × 0.5–0.7 mm height; weight ≈ 8.85 mg.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with MMBZ5275B and SZBZX84-C75, the BZT52C75 delivers 67% higher power rating than the former and 67% higher than the latter, enabling robust operation in adapter and converter reference circuits where sustained 2 mA current and transient energy absorption are design-critical.

Availability

BZT52C75 is available at Aetrix Electronics and suitable for adapter voltage references, on-board DC/DC converters, and industrial sensor excitation requiring stable component supply, consistent parametric performance, and RoHS-compliant sourcing.

Supply support for BZT52C75 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete devices, power management ICs, and analog components for industrial and consumer markets.

The BZT52C series was designed specifically for cost-effective, high-reliability voltage reference and stabilization in space-constrained SMT power systems - emphasizing tight tolerance, MSL-1 compatibility, and broad voltage coverage.

FAQ

What is the zener voltage tolerance of BZT52C75?

The BZT52C75 has a nominal zener voltage of 75.0 V with a guaranteed tolerance of ±5%, meaning the actual measured V_Z falls between 71.25 V and 78.75 V when tested at I_ZT = 2 mA under pulse conditions. This tolerance is confirmed in the Electrical Specifications table of the Taiwan Semiconductor datasheet Version G1804.

What package does BZT52C75 use and what are its key mechanical features?

The BZT52C75 uses the SOD-123F surface-mount package, featuring matte tin-plated leads compliant with J-STD-002 solderability, a cathode band for polarity identification, UL 94 V-0 flammability rating, and moisture sensitivity level 1 per J-STD-020 - enabling standard reflow without baking.

What is the maximum power dissipation rating for BZT52C75?

The BZT52C75 is rated for 500 mW maximum power dissipation at T_A = 25 °C. Its junction-to-ambient thermal resistance is 350 °C/W, so power must be derated linearly above 25 °C ambient - e.g., ~350 mW at 65 °C ambient - to maintain T_J ≤ 150 °C.

How does the leakage current of BZT52C75 compare to lower-voltage variants in the same family?

The BZT52C75 specifies a maximum leakage current of 0.045 µA at V_R = 52.5 V (70% of nominal V_Z), matching the leakage spec of other high-voltage variants (≥33 V) in the BZT52C series. Lower-voltage parts like BZT52C10 specify higher leakage (e.g., 0.18 µA at 7.0 V), reflecting inherent process scaling.

Can BZT52C75 be used as a direct replacement for BZT52C75RHG or BZT52C75RH?

Yes - BZT52C75 is the base part number; BZT52C75RHG and BZT52C75RH denote identical electrical and mechanical specifications with only packing differences (3K/7" reel). Both share the same SOD-123F package, 75 V ±5% V_Z, 500 mW rating, and thermal characteristics - making them functionally and physically interchangeable.