Diodes Incorporated BZT52C8V2-13

Overview

BZT52C8V2-13 from Diodes Incorporated is a surface-mount 8.2 V Zener diode in SOD123 package, rated for 500 mW power dissipation at TL = +75°C and 370 mW at TA = +25°C, with 15 Ω typical zener impedance at 5 mA test current and ±5% voltage tolerance (7.7–8.7 V), used for precision voltage regulation and overvoltage protection in low-power DC rails.

For engineers reviewing the BZT52C8V2-13 datasheet, BZT52C8V2-13 pinout, BZT52C8V2-13 application, or BZT52C8V2-13 equivalent, this page delivers verified electrical parameters, thermal derating behavior, SOD123 mechanical layout, and AEC-Q101-qualified alternatives for automotive and industrial power management designs.

Technical Context

This Zener diode operates in reverse breakdown mode with a nominal 8.2 V regulation voltage at 5 mA test current, exhibiting a positive temperature coefficient of +3.2 mV/°C and maximum 0.7 µA reverse leakage at VR = 6.2 V. Its planar die construction ensures stable voltage reference performance under transient load conditions.

Thermal resistance is 150 °C/W junction-to-lead and 338 °C/W junction-to-ambient (FR-4 PCB, 1-inch copper pad), requiring careful thermal design when operating near PD limits. The device is fully RoHS-compliant, halogen- and antimony-free, and qualified to AEC-Q101 for automotive reliability.

Key Specifications

Pinout & Package

Package: SOD123 - molded plastic case, UL 94V-0 flammability rating, 0.010 g weight, matte tin-plated alloy 42 leadframe, cathode indicated by band.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Compared with MMSZ5236B-TP and BZX84-C8V2, BZT52C8V2-13 offers superior thermal capability (370 mW vs. 350 mW) and full AEC-Q101 validation in a robust SOD123 package-making it optimal for high-reliability 12 V system clamping where board-level thermal management is constrained.

Availability

BZT52C8V2-13 is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, USB-C power adapters, and portable medical device power monitoring requiring stable component supply and long-term lifecycle support.

Supply support for BZT52C8V2-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

The BZT52 series belongs to Diodes' general-purpose Zener diode product line, designed specifically for cost-effective, high-volume voltage regulation and transient suppression in space- and power-constrained applications.

FAQ

What is the maximum reverse voltage (VR) at which BZT52C8V2-13 guarantees IR ≤ 0.7 µA?

The datasheet specifies 0.7 µA maximum reverse current at VR = 6.2 V. This value is measured under controlled DC conditions at TA = +25°C and serves as the guaranteed upper limit for leakage in voltage-reference configurations where low standby current is critical.

Can BZT52C8V2-13 be used in place of a 9.1 V Zener like BZT52C9V1 in a voltage clamp circuit?

No-BZT52C8V2-13 has a nominal 8.2 V breakdown (7.7–8.7 V range), while BZT52C9V1 is 9.1 V (8.5–9.6 V). Substituting would reduce clamping voltage by ~0.9 V, potentially exposing downstream components to overvoltage. Always match nominal Zener voltage to circuit protection thresholds.

Does the SOD123 package of BZT52C8V2-13 support reflow soldering per J-STD-020?

Yes-the device is qualified for moisture sensitivity level 1 per J-STD-020 and features matte tin finish compatible with standard Pb-free reflow profiles (peak 260°C). No baking is required prior to assembly, and the package withstands standard IPC-A-610 Class 2/3 process conditions.

How does the +3.2 mV/°C temperature coefficient affect regulation accuracy over –40°C to +125°C?

Over that 165°C span, total VZ shift is approximately +0.53 V (3.2 mV × 165), resulting in a worst-case regulation range of 7.7–9.2 V. For high-accuracy references, this drift must be compensated via circuit design or paired with TC-matched components.