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Taiwan Semiconductor Corporation BZT52C8V2-G
- Part No.:
- BZT52C8V2-G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Zener Diodes
- Package:
- SOD-123
- Datasheet:
-
BZT52C8V2-G.pdf
- Description:
- DIODE ZENER 8.2V 350MW SOD123
- Quantity:
- Payment:
- Shipping:
Inventory:8,816
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Product details
Overview
BZT52C8V2-G from Taiwan Semiconductor is a surface-mount Zener diode with nominal 8.2 V zener voltage, ±5% tolerance, 350 mW power dissipation, and SOD-123 package. It regulates voltage in low-power biasing, reference, and protection circuits across consumer and industrial electronics.
For engineers reviewing the BZT52C8V2-G datasheet, BZT52C8V2-G pinout, BZT52C8V2-G application, or BZT52C8V2-G equivalent, key selection criteria include zener voltage accuracy (7.7–8.7 V), dynamic impedance (15 Ω @ 5 mA), leakage current (≤0.7 µA @ 5.0 V), and thermal performance (RθJA = 357 °C/W) in compact SOD-123 form factor.
Technical Context
The BZT52C8V2-G operates as a single-die, cathode-banded Zener diode optimized for stable reverse-breakdown regulation at 5 mA test current. Its 15 Ω zener impedance at IZT = 5 mA and 3.2 mV/°C temperature coefficient support precision voltage referencing under moderate load variation.
Designed for ambient operation from –55 °C to +150 °C, it features matte tin-plated leads compliant with J-STD-002 solderability and meets JESD 201 Class 1A whisker resistance. The SOD-123 case conforms to UL 94V-0 flammability rating and moisture sensitivity level 1 per J-STD-020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 7.7–8.7 V (nominal 8.2 V @ 5 mA; enables stable reference in 8 V rail monitoring) |
| Power Dissipation (PD) | 350 mW (supports continuous regulation in space-constrained PCB layouts) |
| Zener Impedance (ZZT) | 15 Ω @ 5 mA (low dynamic resistance ensures minimal output voltage shift under load transients) |
| Leakage Current (IR) | ≤0.7 µA @ 5.0 V (prevents excessive standby current in battery-backed circuits) |
| Junction Temperature Range | –55 °C to +150 °C (enables deployment in automotive under-hood and industrial control environments) |
| Forward Voltage (VF) | 0.9 V @ 10 mA (allows use as polarity-protected clamp in bidirectional signal lines) |
| Temperature Coefficient | +3.2 mV/°C (positive drift supports predictable compensation in temperature-sensitive references) |
Pinout & Package
Package: SOD-123 - surface-mount, single-ended, cathode indicated by band; dimensions per Taiwan Semiconductor outline drawing; weight ≈10.55 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal / Zener cathode reference node | Connected to lower-potential side in regulation; defines polarity for reverse-bias operation |
| Cathode | Zener breakdown terminal / voltage reference output | Banded end; supplies regulated voltage when reverse-biased above VZ; referenced to system ground or bias rail |
Key Features
| Feature | Design Value |
|---|---|
| ±5% Zener voltage tolerance | Ensures tight regulation without post-production trimming in cost-sensitive designs |
| SOD-123 package | Enables high-density placement on 0.95 mm pitch pads; compatible with standard reflow profiles |
| Moisture Sensitivity Level 1 | Eliminates bake requirements prior to assembly; reduces manufacturing overhead |
| RoHS & halogen-free compliance | Meets IEC 61249-2-21 and global environmental directives for commercial and industrial shipments |
| Junction-to-ambient thermal resistance | 357 °C/W allows full 350 mW dissipation at ≤75 °C ambient without heatsinking |
Applications
| Overvoltage Clamp in USB Interface | Reference Voltage for ADC Bias |
|---|---|
Use Scenario: Protects USB data lines from ESD-induced voltage spikes during hot-plug events. IC Role / Device Role / Timing Role: Zener clamping element placed between D+ and ground to shunt transient energy above 8.2 V. Use Value: Leverages 0.7 µA leakage and 15 Ω impedance to minimize signal distortion while clamping within USB 2.0 voltage limits. | Use Scenario: Provides stable 8.2 V reference for 12-bit SAR ADC input scaling in sensor front-ends. IC Role / Device Role / Timing Role: Precision voltage reference source feeding resistive divider network. Use Value: ±5% tolerance and +3.2 mV/°C TC enable <1 LSB error over 0–70 °C operating range without calibration. |
| Low-Power LDO Feedback Divider | Reverse Polarity Protection Monitor |
Use Scenario: Sets output voltage of adjustable 3.3 V LDO via resistor divider tied to feedback pin. IC Role / Device Role / Timing Role: Zener-based reference node replacing external voltage reference IC. Use Value: 350 mW rating supports direct connection to divider without series resistor; reduces BOM count by one component. | Use Scenario: Detects reverse battery connection in portable instrumentation before main power-up. IC Role / Device Role / Timing Role: Reverse-biased monitor element triggering shutdown logic when cathode voltage exceeds 8.2 V. Use Value: 7.7–8.7 V breakdown window provides margin against supply ripple while ensuring fast fault detection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBZ5231BS-7-F | Zener voltage 8.7 V (min), 9.1 V (nom), 9.5 V (max); 200 mW PD; SOT-23 package | Higher nominal voltage and lower power rating limit use in 8.2 V reference rails requiring tight tolerance | Select when SOT-23 footprint is preferred and ±5% tolerance at 9.1 V is acceptable |
| 1N4734A | Through-hole DO-41 package; 1 W PD; 10% VZ tolerance (8.6–9.4 V) | Not suitable for automated SMT assembly; higher power dissipation requires larger board area | Choose only for prototyping or legacy through-hole designs where rework tolerance outweighs density constraints |
Compared with MMBZ5231BS-7-F and 1N4734A, the BZT52C8V2-G delivers tighter 8.2 V regulation in SMT-optimized SOD-123 with 350 mW capability-making it optimal for space-constrained, production-grade 8 V reference and clamp functions where ±5% tolerance and low leakage are critical.
Availability
BZT52C8V2-G is available at Aetrix Electronics and suitable for voltage reference design, overvoltage protection, and bias network stabilization requiring stable component supply in high-volume consumer, industrial control, and automotive body electronics programs.
Supply support for BZT52C8V2-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, computing, and consumer markets since 1979.
The BZT52C series targets cost-effective, high-reliability Zener regulation in compact SMT packages-designed specifically for voltage reference, surge suppression, and bias stabilization in space- and power-constrained applications.
FAQ
What is the nominal zener voltage and tolerance of BZT52C8V2-G?
The BZT52C8V2-G has a nominal zener voltage of 8.2 V with a guaranteed tolerance of ±5%, meaning its actual breakdown voltage falls between 7.7 V and 8.7 V when tested at 5 mA. This specification is verified per Taiwan Semiconductor's C2007 datasheet revision and applies under standard 25 °C ambient conditions.
What package type does BZT52C8V2-G use, and what are its key mechanical attributes?
BZT52C8V2-G uses the SOD-123 surface-mount package: a single-ended, cathode-banded case with UL 94V-0 rated molding compound, matte tin-plated leads compliant with J-STD-002, and moisture sensitivity level 1 per J-STD-020. Its approximate weight is 10.55 mg, and it meets JESD 201 Class 1A whisker resistance requirements.
What is the maximum power dissipation and thermal resistance of BZT52C8V2-G?
The BZT52C8V2-G has a maximum power dissipation (PD) of 350 mW at 25 °C ambient and a junction-to-ambient thermal resistance (RθJA) of 357 °C/W. This allows full-rated power operation up to approximately 75 °C ambient temperature without heatsinking, based on its derating curve and 150 °C maximum junction temperature.
How does the leakage current of BZT52C8V2-G compare at 5.0 V reverse bias?
At 5.0 V reverse bias, the BZT52C8V2-G exhibits a maximum leakage current (IR) of 0.7 µA, as specified in Taiwan Semiconductor's electrical characteristics table. This low leakage supports use in battery-powered systems and high-impedance reference networks where standby current must remain below 1 µA.
Is BZT52C8V2-G RoHS and halogen-free compliant?
Yes, BZT52C8V2-G is RoHS compliant and halogen-free per IEC 61249-2-21. Taiwan Semiconductor confirms this in the "Features" section of the C2007 datasheet, listing both compliance statements explicitly for the entire BZT52C2V4-G through BZT52C75-G family, including BZT52C8V2-G.
BZT52C8V2-G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- SOD-123
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 8.2 V
- Tolerance:
- ±5%
- Power - Max:
- 350 mW
- Impedance (Max) (Zzt):
- 15 Ohms
- Current - Reverse Leakage @ Vr:
- 700 nA @ 5 V
- Voltage - Forward (Vf) (Max) @ If:
- 900 mV @ 10 mA
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-123
BZT52C8V2-G FAQ
1.How can I place an order for BZT52C8V2-G through Aetrix?
Please submit a Request for Quotation (RFQ) for BZT52C8V2-G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BZT52C8V2-G reliable?
The price and inventory of BZT52C8V2-G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZT52C8V2-G is usually 5 days.
3.What payment methods are accepted for BZT52C8V2-G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZT52C8V2-G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BZT52C8V2-G?
BZT52C8V2-G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BZT52C8V2-G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BZT52C8V2-G?
For technical support, including BZT52C8V2-G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZT52C8V2-G requirements.
6.How does Aetrix verify that BZT52C8V2-G is sourced from the original manufacturer or authorized distributors?
All BZT52C8V2-G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZT52C8V2-G meets industry standards.
7.What is the process for return or replacement of BZT52C8V2-G?
All BZT52C8V2-G units undergo pre-shipment inspection (PSI). If there is an issue with BZT52C8V2-G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BZT52C8V2-G part is unused and in its original packaging.
Return procedure for BZT52C8V2-G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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