Diodes Incorporated BZT52C9V1S-7

Overview

BZT52C9V1S-7 from Diodes Incorporated is a surface-mount Zener diode with nominal 9.1 V zener voltage, 5 mA test current, 15 Ω maximum zener impedance at 1 kHz, 0.2 µA maximum reverse leakage at 6.0 V, and ±3.8 mV/°C temperature coefficient. It operates in SOD323 package and serves as precision voltage reference or overvoltage clamp in low-power analog signal conditioning circuits.

For engineers reviewing the BZT52C9V1S-7 datasheet, BZT52C9V1S-7 pinout, BZT52C9V1S-7 application, or BZT52C9V1S-7 equivalent, key selection criteria include zener voltage tolerance (±6.6%), thermal coefficient sign and magnitude, power dissipation limit (200 mW), junction-to-ambient thermal resistance (625 °C/W), and automotive qualification status (AEC-Q101).

Technical Context

This Zener diode uses planar die construction for stable breakdown characteristics and low noise performance. Its 9.1 V nominal zener voltage is specified at 5 mA test current with ±6.6% tolerance (8.5–9.6 V), and exhibits a positive temperature coefficient of +3.8 mV/°C - enabling predictable drift compensation in bias networks.

The device is rated for 200 mW power dissipation on FR-4 PCB with recommended pad layout, derating linearly above +25°C ambient per Figure 1. Reverse leakage remains ≤0.2 µA at VR = 6.0 V, supporting high-impedance sensing and low-quiescent monitoring applications.

Key Specifications

Pinout & Package

Package: SOD323 - surface-mount plastic case with cathode band marking; dimensions: 1.30 mm (D) × 1.70 mm (E) × 0.30 mm (b); weight ≈ 0.0049 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with MMSZ4702T1G and BZX384-C9V1, BZT52C9V1S-7 offers balanced trade-offs: tighter thermal coefficient (+3.8 vs. +4.5 mV/°C), verified AEC-Q101 compliance, and industry-standard SOD323 footprint - making it optimal for mid-tier automotive and industrial reference designs where cost, reliability, and regulation stability must coexist.

Availability

BZT52C9V1S-7 is available at Aetrix Electronics and suitable for automotive sensor biasing, industrial analog input protection, and low-power IoT reference applications requiring stable component supply and long-term lifecycle support.

Supply support for BZT52C9V1S-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BZT52C series belongs to Diodes' precision Zener diode product line, engineered specifically for voltage regulation, reference, and overvoltage protection in space-constrained, high-reliability applications including automotive, industrial, and medical electronics.

FAQ

What is the maximum power dissipation for BZT52C9V1S-7 at +85°C ambient?

At +85°C ambient, the device's power dissipation must be derated linearly from 200 mW at +25°C using the 625 °C/W thermal resistance. The allowable power is 200 mW × (1 − (85 − 25)/625) = 180.8 mW. This value assumes mounting on FR-4 with Diodes' recommended pad layout per DS30093.

Does BZT52C9V1S-7 have a defined forward voltage specification?

Yes - forward voltage is specified as VF = 0.9 V maximum at IF = 10 mA. This parameter is relevant for applications where the diode may conduct forward during fault conditions or in dual-role circuits, and supports accurate modeling of conduction losses in clamp or protection paths.

Is the SOD323 package lead-free and RoHS compliant?

Yes - BZT52C9V1S-7 uses matte tin finish over alloy 42 leadframe, is fully lead-free, and complies with EU Directive 2011/65/EU (RoHS 2). It is also halogen- and antimony-free ("Green") per Diodes' definitions, containing <900 ppm bromine, <900 ppm chlorine, and <1000 ppm antimony compounds.

How does the +3.8 mV/°C temperature coefficient affect circuit design?

The positive temperature coefficient means V_Z increases by 3.8 mV per °C rise in junction temperature. In precision references, this drift can be compensated using complementary negative-TC components (e.g., silicon bandgap references) or calibrated out in digital systems via lookup tables derived from thermal testing data.