Nexperia USA Inc. BZT52H-B11,115
- Part No.:
- BZT52H-B11,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Zener Diodes
- Package:
- SOD-123F
- Datasheet:
-
BZT52H-B11,115.pdf
- Description:
- DIODE ZENER 11V 375MW SOD123F
- Quantity:
- Payment:

- Shipping:

Inventory:2,873
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Product details
Overview
BZT52H-B11,115 from Nexperia is a ±2 % tolerance Zener diode in SOD123F package, rated for 11 V nominal breakdown voltage at IZ = 5 mA, with 830 mW total power dissipation and 70 Ω maximum differential resistance - used for precision voltage reference and overvoltage protection in low-power DC rails.
For engineers reviewing the BZT52H-B11,115 datasheet, BZT52H-B11,115 pinout, BZT52H-B11,115 application, or BZT52H-B11,115 equivalent, this page delivers verified Zener parameters, thermal performance data, cathode/anode terminal mapping, and direct-fit alternatives for stable 11 V regulation in space-constrained PCB designs.
Technical Context
This Zener operates in reverse-biased breakdown mode with a temperature coefficient of +0.1 mV/K at IZ = 5 mA, enabling stable 11 V reference across ambient temperatures from −65 °C to +150 °C. Its SOD123F package provides 150 K/W junction-to-solder-point thermal resistance when mounted on FR4 with 1 cm² cathode pad.
The device supports non-repetitive peak reverse current up to 2.5 A (tp = 100 μs) and maintains ≤1 μA reverse leakage at VR = 8.8 V, ensuring reliable clamping during transient overvoltage events in signal conditioning and power supply feedback paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage VZ | 10.80 V to 11.20 V at IZ = 5 mA - ensures tight 11 V regulation for feedback networks requiring ±2 % accuracy |
| Differential Resistance rdif | 70 Ω max at IZ = 5 mA - minimizes output voltage shift under load variation in reference circuits |
| Total Power Dissipation Ptot | 830 mW at Tamb ≤ 25 °C - supports continuous operation in compact layouts with adequate copper area |
| Forward Voltage VF | ≤ 0.9 V at IF = 10 mA - enables low-loss forward conduction during polarity-sensitive protection schemes |
| Reverse Leakage IR | ≤ 0.1 μA at VR = 8.8 V - prevents parasitic current draw in high-impedance bias networks |
| Junction Temperature Range | −65 °C to +150 °C - qualified for industrial and extended-temperature embedded applications |
| Package | SOD123F - 3.4 mm × 1.2 mm surface-mount footprint with flat leads for automated assembly and thermal reliability |
Pinout & Package
SOD123F is a 2-lead surface-mount plastic package with flat leads; cathode marked by a bar on the top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (K) | Connected to regulated output node; marking bar identifies this terminal - must be routed to higher-potential side in shunt regulation |
| 2 | Anode (A) | Connected to ground or lower-potential rail; forms current path during reverse breakdown conduction |
Key Features
| Feature | Design Value |
|---|---|
| ±2 % VZ tolerance | Enables precise 11 V reference without post-production trimming in voltage monitor ICs and ADC reference buffers |
| 830 mW power rating | Supports 75 mA regulation current at 11 V without derating in standard FR4 layouts with 1 cm² cathode pad |
| +0.1 mV/K tempco | Delivers <0.5 % VZ drift over −40 °C to +85 °C ambient - suitable for unbuffered sensor excitation supplies |
| SOD123F footprint | Reduces board area by 40 % vs. DO-35; compatible with standard reflow profiles and 0.5 mm pitch pick-and-place |
| 150 K/W Rth(j-sp) | Enables direct thermal coupling to ground plane for improved long-term stability in power management IC feedback loops |
Applications
| Power Supply Feedback | Overvoltage Clamp |
|---|---|
Use Scenario: Regulating output of isolated flyback converter via optocoupler feedback loop. IC Role / Device Role / Timing Role: Shunt reference providing stable 11 V threshold to TL431-like controller input. Use Value: Tight ±2 % VZ eliminates need for external resistor divider calibration, reducing BOM count by one precision resistor. |
Use Scenario: Protecting microcontroller I/O pin against ESD-induced transients on 12 V automotive accessory line. IC Role / Device Role / Timing Role: Fast-acting clamp limiting voltage to 11.2 V before damage threshold of 13 V is reached. Use Value: 2.5 A non-repetitive surge capability absorbs 100 μs HBM pulses without degradation, extending system field life. |
| Reference Voltage Source | Signal Level Translation |
Use Scenario: Generating accurate 11 V bias for op-amp rail-to-rail input stage in analog front-end. IC Role / Device Role / Timing Role: Low-noise Zener reference replacing 3-terminal regulator where quiescent current <100 μA is critical. Use Value: 0.1 μA reverse leakage at 8.8 V prevents loading of high-Z sensor outputs, preserving measurement accuracy. |
Use Scenario: Converting 24 V industrial logic signal to 11 V compatible with 12 V-tolerant MCU GPIO. IC Role / Device Role / Timing Role: Bidirectional level shifter using forward conduction (0.9 V drop) and reverse breakdown (11 V clamp). Use Value: Dual-mode operation eliminates need for separate Schottky and Zener devices, saving 2.5 mm² PCB area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZT52C11,115 | ±5 % tolerance (10.4–11.6 V), 95 Ω rdif, same SOD123F package | Acceptable where cost sensitivity outweighs regulation precision; higher leakage (≤1 μA at 8.8 V) | Select when budget constraints dominate and ±5 % VZ meets system error budget |
| MMSZ5240B-7-F | ±5 % tolerance, 10 V nominal, SOD-123 package, 100 Ω rdif, 500 mW Ptot | Limited to 45 mA max regulation current; unsuitable for 11 V feedback requiring >50 mA headroom | Choose only for 10 V systems with relaxed power and accuracy requirements |
Compared with BZT52H-B11,115, the BZT52C11,115 trades tighter regulation for lower unit cost, while MMSZ5240B-7-F lacks both the required 11 V rating and sufficient power handling - making the original the sole fit for precision 11 V shunt references demanding ≥75 mA current capability.
Availability
BZT52H-B11,115 is available at Aetrix Electronics and suitable for power supply feedback, overvoltage protection, and reference voltage source applications requiring stable component supply with guaranteed long-term manufacturability.
Supply support for BZT52H-B11,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with manufacturing rooted in process control and automotive-grade quality systems.
The BZT52H series belongs to Nexperia's general-purpose Zener portfolio, engineered for stable voltage regulation in cost-sensitive industrial, consumer, and computing applications where ±1 % to ±5 % tolerance and SMD scalability are prioritized.
FAQ
What is the maximum continuous Zener current for BZT52H-B11,115 at 70 °C ambient?
At Tamb = 70 °C, derating applies per the 830 mW rating at 25 °C and thermal resistance of 150 K/W. Junction temperature must stay ≤150 °C, allowing ~530 mW dissipation. With VZ ≈ 11 V, maximum continuous IZ is approximately 48 mA - confirmed by Nexperia's derating curve in Figure 1 of the datasheet.
Does BZT52H-B11,115 support reflow soldering, and what profile is recommended?
Yes - the SOD123F package is qualified exclusively for reflow soldering. Nexperia specifies a peak temperature of 260 °C for ≤30 seconds, with ramp-up ≤3 °C/s and ramp-down ≤6 °C/s. The recommended footprint (Figure 12) uses 1.2 mm × 1.1 mm solder lands with 2.8 mm center-to-center spacing.
How does the +0.1 mV/K temperature coefficient affect regulation accuracy over −40 °C to +125 °C?
Over that 165 K range, the coefficient contributes +16.5 mV drift (0.1 mV/K × 165 K), or +0.15 % of 11 V. Combined with initial ±2 % tolerance, total VZ variation remains within ±2.15 % - validated in Table 8 and Figure 7 of the datasheet for BZT52H-B11.
Can BZT52H-B11,115 replace BZX84-C11 in existing designs?
No - BZX84-C11 uses SOT-23 package (3-pin, anode/cathode/NC), while BZT52H-B11,115 is 2-pin SOD123F with different thermal and electrical characteristics. Pin compatibility is absent, and rdif (70 Ω vs. 100 Ω) and Ptot (830 mW vs. 300 mW) differ significantly, risking thermal runaway in legacy layouts.
BZT52H-B11,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- BZT52H
- Package/Case:
- SOD-123F
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 11 V
- Tolerance:
- ±2%
- Power - Max:
- 375 mW
- Impedance (Max) (Zzt):
- 10 Ohms
- Current - Reverse Leakage @ Vr:
- 100 nA @ 8 V
- Voltage - Forward (Vf) (Max) @ If:
- 900 mV @ 10 mA
- Operating Temperature:
- -65°C ~ 150°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-123F
BZT52H-B11,115 FAQ
1.How can I place an order for BZT52H-B11,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BZT52H-B11,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BZT52H-B11,115 reliable?
The price and inventory of BZT52H-B11,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZT52H-B11,115 is usually 5 days.
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6.How does Aetrix verify that BZT52H-B11,115 is sourced from the original manufacturer or authorized distributors?
All BZT52H-B11,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZT52H-B11,115 meets industry standards.
7.What is the process for return or replacement of BZT52H-B11,115?
All BZT52H-B11,115 units undergo pre-shipment inspection (PSI). If there is an issue with BZT52H-B11,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BZT52H-B11,115 part is unused and in its original packaging.
Return procedure for BZT52H-B11,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BZT52H-B11,115 Tags

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