Nexperia USA Inc. BZT52H-B33,115

Overview

BZT52H-B33,115 from Nexperia is a ±2 % tolerance Zener diode in SOD123F package, rated for 33 V nominal breakdown voltage at I_Z = 2 mA, with 830 mW total power dissipation and 250 mA maximum forward current. It serves as a precision voltage reference or overvoltage clamp in low-power DC regulation circuits, such as power supply feedback paths and sensor biasing networks.

For engineers reviewing the BZT52H-B33,115 datasheet, BZT52H-B33,115 pinout, BZT52H-B33,115 application, or BZT52H-B33,115 equivalent, key selection criteria include Zener voltage tolerance (±2 %), thermal resistance (150 K/W junction-to-solder-point), differential resistance (250 Ω max), reverse leakage (≤40 μA at 25.4 V), and SOD123F footprint compatibility with automated reflow assembly.

Technical Context

This Zener diode operates in reverse-bias breakdown mode to maintain stable voltage across its terminals under varying load or input conditions. Its temperature coefficient of +0.05 mV/K at I_Z = 2 mA ensures minimal drift over ambient temperature ranges from –65 °C to +150 °C.

The device uses planar epitaxial construction for consistent breakdown characteristics and low noise performance. Its 250 Ω maximum differential resistance at I_Z = 2 mA supports stable regulation in low-current applications where dynamic impedance directly impacts output ripple rejection.

Key Specifications

Pinout & Package

SOD123F is a small-outline, flat-lead, surface-mount plastic package measuring 3.6 mm × 1.7 mm × 1.0 mm, optimized for high-density PCB layouts and compatible with standard reflow soldering profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Compared with BZT52H-B33,115, the BZT52H-C33,115 trades voltage accuracy for cost reduction, while MMSZ5261B-7-F imposes stricter power and impedance limits that degrade regulation performance in demanding feedback or clamping roles.

Availability

BZT52H-B33,115 is available at Aetrix Electronics and suitable for power supply feedback regulation, overvoltage clamp protection, and reference voltage source applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for BZT52H-B33,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, headquartered in Nijmegen, Netherlands, with manufacturing in Europe and Asia.

The BZT52H series belongs to Nexperia's general-purpose Zener diode product line, engineered for cost-effective, space-efficient voltage regulation and protection in consumer, industrial, and computing applications where precision and thermal robustness are balanced against production scale.

FAQ

What is the maximum reverse voltage before breakdown for BZT52H-B33,115?

The guaranteed minimum Zener voltage is 32.3 V at I_Z = 2 mA, meaning breakdown begins no earlier than this value. The absolute maximum reverse voltage before irreversible damage is defined by the limiting value V_RWM = 25.4 V - the peak working voltage at which reverse leakage remains ≤40 μA. Exceeding 33.7 V (max V_Z) does not cause failure but reflects the upper bound of the specified tolerance band.

Can BZT52H-B33,115 be used in place of a 33 V Zener with ±5 % tolerance?

Yes, but only if the circuit requires tighter regulation. The BZT52H-B33,115 offers ±2 % tolerance (32.3–33.7 V) versus ±5 % (31.0–35.0 V) for the C-grade variant. Substituting it improves voltage accuracy and reduces output variation in feedback loops, though it does not change package, pinout, or thermal behavior - making it a direct drop-in upgrade where precision matters.

How does thermal resistance affect derating of BZT52H-B33,115 at elevated ambient temperatures?

With R_th(j-sp) = 150 K/W, each 1 °C rise in solder-point temperature above 25 °C reduces allowable power by 5.5 mW. At 85 °C ambient, the device must be derated to ~490 mW to keep junction temperature ≤150 °C. This is calculated using P_derated = P_tot × (1 – (T_amb – 25)/125), assuming negligible internal self-heating contribution.

Is BZT52H-B33,115 suitable for automotive applications?

No. Per Nexperia's revision history (Rev. 7, Jan 2023), the BZT52H series is explicitly designated as non-automotive qualified. It lacks AEC-Q200 stress testing and automotive-grade process controls. For automotive use, engineers must select Nexperia's dedicated -Q qualified Zener families, such as the BZX84-Q series, which undergo full qualification per automotive reliability standards.