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Nexperia USA Inc. BZT52H-B3V3,115

Part No.:
BZT52H-B3V3,115
Manufacturer:
Nexperia USA Inc.
Category:
Single Zener Diodes
Package:
SOD-123F
Datasheet:
AetrixBZT52H-B3V3,115.pdf
Description:
DIODE ZENER 3.3V 375MW SOD123F
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,749

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Product details

Overview

BZT52H-B3V3,115 from Nexperia is a ±2 % tolerance Zener diode in SOD123F package, designed for precision voltage regulation and reference applications at 3.3 V nominal breakdown voltage with 5 Ω typical differential resistance at IZ = 5 mA and 830 mW total power dissipation at Tamb ≤ 25 °C. It serves as a stable shunt voltage reference in low-power analog circuits, power supply feedback networks, and overvoltage protection clamps.

For engineers reviewing the BZT52H-B3V3,115 datasheet, BZT52H-B3V3,115 pinout, BZT52H-B3V3,115 application, or BZT52H-B3V3,115 equivalent, this page delivers verified Zener voltage, thermal resistance (Rth(j-sp) = 150 K/W), reverse current (IR ≤ 5 μA at VR = 1 V), forward voltage (VF ≤ 0.9 V at IF = 10 mA), and SOD123F footprint compatibility for rapid PCB integration.

Technical Context

This device operates in reverse-biased Zener breakdown mode with a nominal VZ of 3.3 V at IZ = 5 mA, exhibiting a temperature coefficient of −3.5 to 0.0 mV/K and differential resistance of ≤95 Ω. Its design targets stable DC voltage reference generation under low-current conditions (IZ = 1–5 mA) with minimal thermal drift.

The SOD123F package enables surface-mount assembly on FR4 PCBs with single-sided copper, using a 1 cm² cathode pad for optimal thermal performance (Rth(j-sp) = 150 K/W). It supports non-repetitive surge handling up to 6.0 A (tp = 100 μs) and junction temperatures up to 150 °C.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage VZ 3.23 V to 3.37 V at IZ = 5 mA - defines precise regulation point for feedback or reference use
Differential Resistance rdif ≤95 Ω at IZ = 5 mA - ensures low output impedance and tight voltage stability under load variation
Reverse Current IR ≤5 μA at VR = 1 V - guarantees minimal leakage in standby or high-impedance sensing nodes
Forward Voltage VF ≤0.9 V at IF = 10 mA - enables reliable anode-cathode conduction during polarity-sensitive protection
Total Power Dissipation Ptot 830 mW at Tamb ≤ 25 °C - sets maximum continuous DC power handling on standard FR4 layout
Junction-to-Solder-Point Rth(j-sp) 150 K/W - quantifies thermal path efficiency from die to cathode solder joint for thermal design margining
Non-repetitive Peak Reverse Current IZSM 6.0 A (tp = 100 μs) - specifies transient surge capability for ESD or line-transient clamping

Pinout & Package

The BZT52H-B3V3,115 is housed in a compact SOD123F surface-mount plastic package (3.6 mm × 1.7 mm × 1.0 mm), optimized for automated placement and reflow soldering on FR4 PCBs with standard footprint per Figure 12.

Pin/Terminal Circuit Role Design Meaning
1 (Marked side) Cathode (K) Connected to regulated output node; marking bar identifies cathode for correct orientation during assembly
2 Anode (A) Connected to ground or lower-potential rail; completes Zener conduction path during reverse bias

Key Features

Feature Design Value
±2 % Zener voltage tolerance Enables tighter regulation accuracy than ±5 % variants, reducing need for post-calibration in reference designs
830 mW power rating Supports higher current regulation (up to ~250 mA peak) without external heatsinking on standard PCBs
SOD123F package Provides 30 % smaller footprint than SOD123 while maintaining compatible solder land geometry for legacy layout reuse
Low 5 μA max reverse leakage Minimizes quiescent current draw in battery-powered systems where standby power budget is critical
−3.5 to 0.0 mV/K tempco Delivers predictable, near-zero drift across −65 °C to +150 °C ambient range for industrial-grade stability

Applications

Power Supply Feedback Overvoltage Clamp

Use Scenario: Regulating output voltage in isolated flyback or buck-boost converters via optocoupler-coupled feedback loop.

IC Role / Device Role: Shunt voltage reference providing precise 3.3 V threshold to TL431 or optocoupler input.

Use Value: Maintains ±1 % output regulation accuracy across line/load/temperature with no additional active components.

Use Scenario: Protecting microcontroller I/O pins from transient overvoltage events exceeding 3.6 V.

IC Role / Device Role: Low-leakage clamp diode diverting excess energy to ground before damage threshold is reached.

Use Value: Limits pin voltage to ≤3.37 V at 5 mA while drawing only ≤5 μA at 1 V, preserving signal integrity.

Reference Voltage Source Signal Level Translation

Use Scenario: Generating a stable 3.3 V reference for ADC biasing or sensor excitation in data acquisition modules.

IC Role / Device Role: Passive Zener reference replacing more complex IC references where ultra-low noise is not required.

Use Value: Delivers 3.3 V ±2 % with <95 Ω dynamic impedance, enabling direct connection to 12-bit SAR ADC inputs.

Use Scenario: Translating 5 V logic signals down to 3.3 V-compatible levels for interfacing with low-voltage FPGAs.

IC Role / Device Role: Cathode-connected Zener used in series with pull-up resistor to clamp high state at 3.3 V.

Use Value: Ensures logic-high level stays within 3.23–3.37 V window, meeting VIH min requirements of 3.0 V devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
BZT52C3V3,115 ±5 % tolerance (3.10–3.50 V), higher max rdif (≤95 Ω), identical SOD123F package Acceptable where regulation accuracy <±3 % suffices; lower cost for non-critical references Select when cost sensitivity outweighs need for ±2 % precision; verify system tolerance stack-up allows wider VZ spread
MMSZ4685T1G ±5 % tolerance (3.14–3.47 V), 500 mW Ptot, SOD-123 package (slightly larger footprint) Lower power rating limits continuous current; requires revised thermal layout and footprint Choose only if legacy MMSZ footprint compatibility is mandatory; derate power by 40 % vs. BZT52H-B3V3,115

Compared with BZT52C3V3,115, the BZT52H-B3V3,115 offers tighter voltage control and higher power headroom; versus MMSZ4685T1G, it provides 66 % greater power handling and superior thermal resistance-critical for sustained regulation in compact layouts.

Availability

BZT52H-B3V3,115 is available at Aetrix Electronics and suitable for power supply feedback networks, overvoltage protection circuits, and precision reference voltage sources requiring stable component supply across industrial, consumer, and communications equipment lifecycles.

Supply support for BZT52H-B3V3,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions with focus on efficiency, miniaturization, and robustness for mass-market electronics.

The BZT52H series belongs to Nexperia's general-purpose Zener diode product line, engineered specifically for cost-effective, space-constrained voltage regulation and reference functions in consumer, computing, and industrial power management systems.

FAQ

What is the maximum continuous Zener current for BZT52H-B3V3,115 at 70 °C ambient?

At Tamb = 70 °C, derating applies: Ptot drops linearly from 830 mW at 25 °C to 0 W at 150 °C. At 70 °C, allowable power is 581 mW. With VZ ≈ 3.3 V, max continuous IZ = 581 mW / 3.3 V ≈ 176 mA - but practical limit is 100 mA to maintain <100 °C junction temperature and ensure long-term reliability.

Can BZT52H-B3V3,115 be used in place of a 3.3 V LDO for low-noise analog supplies?

No - this Zener diode lacks the low-output-impedance, high-PSRR, and current-limiting features of an LDO. It provides passive regulation only and exhibits higher noise, poorer line/load regulation, and no short-circuit protection. Use only where simple shunt reference or clamping is sufficient, not as a replacement for active regulators.

Is the SOD123F package compatible with standard SOD-123 reflow footprints?

Yes - the SOD123F has identical lead spacing (2.5 mm) and overall length (3.6 mm) as SOD-123, but reduced height (1.0 mm vs. 1.2 mm) and narrower body (1.5 mm vs. 1.7 mm). The recommended reflow footprint (2.8 mm × 1.6 mm solder land) fits both packages, though SOD123F achieves better thermal performance due to optimized cathode pad contact.

What is the typical capacitance of BZT52H-B3V3,115 at 0 V reverse bias?

Diode capacitance Cd is 450 pF at f = 1 MHz and VR = 0 V, as specified in Table 8 for all BZT52H-A/B/C2V4–C24 types including BZT52H-B3V3. This value remains stable across the 3.3 V variant's operating range and impacts high-frequency noise filtering and transient response in clamping applications.

BZT52H-B3V3,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
BZT52H
Package/Case:
SOD-123F
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
3.3 V
Tolerance:
±2%
Power - Max:
375 mW
Impedance (Max) (Zzt):
95 Ohms
Current - Reverse Leakage @ Vr:
5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If:
900 mV @ 10 mA
Operating Temperature:
-65°C ~ 150°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-123F

BZT52H-B3V3,115 FAQ

1.How can I place an order for BZT52H-B3V3,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BZT52H-B3V3,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BZT52H-B3V3,115 reliable?

The price and inventory of BZT52H-B3V3,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZT52H-B3V3,115 is usually 5 days.

3.What payment methods are accepted for BZT52H-B3V3,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZT52H-B3V3,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BZT52H-B3V3,115?

BZT52H-B3V3,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BZT52H-B3V3,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BZT52H-B3V3,115?

For technical support, including BZT52H-B3V3,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZT52H-B3V3,115 requirements.

6.How does Aetrix verify that BZT52H-B3V3,115 is sourced from the original manufacturer or authorized distributors?

All BZT52H-B3V3,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZT52H-B3V3,115 meets industry standards.

7.What is the process for return or replacement of BZT52H-B3V3,115?

All BZT52H-B3V3,115 units undergo pre-shipment inspection (PSI). If there is an issue with BZT52H-B3V3,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BZT52H-B3V3,115 part is unused and in its original packaging.

Return procedure for BZT52H-B3V3,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BZT52H-B3V3,115 Tags

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