Nexperia USA Inc. BZT52H-B4V3,115
- Part No.:
- BZT52H-B4V3,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Zener Diodes
- Package:
- SOD-123F
- Datasheet:
-
BZT52H-B4V3,115.pdf
- Description:
- DIODE ZENER 4.3V 375MW SOD123F
- Quantity:
- Payment:

- Shipping:

Inventory:4,926
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Product details
Overview
BZT52H-B4V3,115 from Nexperia is a ±2 % tolerance Zener diode in SOD123F package, rated for 4.3 V nominal breakdown voltage at 5 mA, 830 mW total power dissipation, and 150 °C maximum junction temperature-used for precision voltage reference and overvoltage clamping in low-power analog signal conditioning circuits.
For engineers reviewing the BZT52H-B4V3,115 datasheet, BZT52H-B4V3,115 pinout, BZT52H-B4V3,115 application, or BZT52H-B4V3,115 equivalent, this page delivers verified Zener parameters, thermal resistance (Rth(j-a) = 330 K/W), differential resistance (95 Ω max), reverse current (3 μA max at 1 V), and cathode/anode terminal mapping per official Nexperia Rev. 7 specification.
Technical Context
This Zener diode operates in reverse-bias breakdown mode with a tightly controlled 4.3 V regulation point at IZ = 5 mA, exhibiting a temperature coefficient of −3.5 to 0.0 mV/K across its operating range. Its low 95 Ω typical differential resistance ensures stable output under varying load currents.
Designed for surface-mount use on FR4 PCBs with single-sided copper, it supports pulsed surge handling up to 40 W (100 μs) and maintains thermal integrity via Rth(j-sp) = 150 K/W to solder point-critical for reliability in compact power-supply feedback paths and ESD protection networks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage VZ | 4.21 V to 4.39 V at IZ = 5 mA - defines precise clamping threshold for 3.3 V/5 V rail monitoring |
| Tolerance | ±2 % - enables tighter regulation than ±5 % variants in feedback loops requiring <1% error budget |
| Differential Resistance rdif | ≤ 95 Ω - minimizes output voltage shift under dynamic load changes in reference circuits |
| Reverse Current IR | ≤ 3 μA at VR = 1 V - ensures low leakage in high-impedance bias networks |
| Total Power Dissipation Ptot | 830 mW at Tamb ≤ 25 °C - supports continuous operation in thermally constrained SMT layouts |
| Junction Temperature Tj | −65 °C to +150 °C - qualifies for industrial ambient environments without derating below 85 °C |
| Forward Voltage VF | ≤ 0.9 V at IF = 10 mA - allows use as polarity-sensitive clamp in bidirectional protection schemes |
Pinout & Package
The BZT52H-B4V3,115 is housed in a SOD123F plastic surface-mount package (3.6 mm × 2.7 mm × 1.2 mm), featuring flat leads optimized for reflow soldering on FR4 PCBs with standard footprint per Figure 12.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (K) | Connected to regulated output node; marking bar identifies this terminal for correct orientation during placement |
| 2 | Anode (A) | Ground or lower-potential reference point; reverse-bias connection establishes Zener conduction path |
Key Features
| Feature | Design Value |
|---|---|
| Power rating | 830 mW at 25 °C ambient - enables higher current regulation than 500 mW SOD-123 variants without thermal runaway |
| Voltage tolerance | ±2 % - reduces binning overhead and improves yield in precision voltage monitor designs |
| Thermal resistance | Rth(j-a) = 330 K/W - allows direct thermal modeling for PCB layout optimization in space-constrained modules |
| Surge capability | IZSM = 6.0 A (100 μs pulse) - provides robust transient suppression in I/O line protection applications |
| Capacitance | Cd = 450 pF at f = 1 MHz - limits high-frequency noise coupling in RF-adjacent analog sections |
Applications
| Power Supply Feedback Reference | Microcontroller I/O Clamp |
|---|---|
|
Use Scenario: Stabilizing feedback voltage in adjustable DC-DC converter ICs (e.g., TLV62568) where output accuracy depends on reference stability. IC Role / Device Role / Timing Role: Zener diode acts as shunt voltage reference, sinking excess current to maintain fixed VREF at error amplifier input. Use Value: ±2 % tolerance and 95 Ω rdif limit output drift to <±12 mV across 0–100 mA load steps-meeting Class II regulation requirements. |
Use Scenario: Protecting 3.3 V GPIO pins against ESD and overvoltage transients from external sensors or connectors. IC Role / Device Role / Timing Role: Bidirectional clamping device, conducting reverse current above 4.3 V and forward current above 0.9 V to limit pin excursion. Use Value: 6.0 A non-repetitive surge rating absorbs IEC 61000-4-2 Level 4 (8 kV contact) events without degradation. |
| Low-Power Sensor Biasing | ADC Reference Stabilization |
|
Use Scenario: Providing stable excitation voltage to resistive temperature detectors (RTDs) in battery-powered environmental monitors. IC Role / Device Role / Timing Role: Precision shunt regulator establishing 4.3 V bias across sensor bridge, independent of supply variation. Use Value: 3 μA max reverse leakage at 1 V ensures <10 nA error contribution in 100 kΩ bridge arms-preserving 16-bit measurement resolution. |
Use Scenario: Decoupling reference input of SAR ADCs (e.g., ADS7953) from digital noise coupling on shared VDD rails. IC Role / Device Role / Timing Role: Low-noise voltage clamp filtering high-frequency switching noise while maintaining DC reference level. Use Value: 450 pF capacitance forms effective RC filter with 100 Ω series resistor, attenuating >10 MHz noise by >40 dB before ADC REF pin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZT52C4V3,115 | ±5 % tolerance, 4.1 V–4.5 V range, 95 Ω rdif, same SOD123F package | Higher initial tolerance increases calibration burden in closed-loop feedback; acceptable for non-critical biasing | Select when cost sensitivity outweighs regulation precision; verify system-level error budget permits ±5 % drift |
| MMSZ4V3T1G | ±5 % tolerance, 4.08–4.52 V range, 90 Ω rdif, SOD-123 package (slightly larger footprint) | Higher thermal resistance (Rth(j-a) ≈ 400 K/W) reduces power handling at elevated ambient temperatures | Choose only if legacy design uses ON Semiconductor footprint; confirm PCB pad revision accommodates 3.7 mm length |
Compared with BZT52H-B4V3,115, the ±2 % BZT52C4V3,115 trades tighter regulation for lower unit cost, while MMSZ4V3T1G offers comparable rdif but requires thermal derating above 60 °C ambient due to inferior package thermal performance.
Availability
BZT52H-B4V3,115 is available at Aetrix Electronics and suitable for voltage reference, I/O protection, and sensor biasing applications requiring stable component supply across industrial control, test equipment, and IoT endpoint designs.
Supply support for BZT52H-B4V3,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, headquartered in Nijmegen, Netherlands.
The BZT52H series belongs to Nexperia's general-purpose Zener diode product line, engineered specifically for stable voltage regulation and transient suppression in cost-sensitive, space-constrained SMT applications across consumer, industrial, and computing markets.
FAQ
What is the maximum continuous reverse current the BZT52H-B4V3,115 can sustain?
The device does not specify a maximum continuous reverse current rating; instead, its safe operating area is defined by power dissipation limits. At 25 °C ambient, it sustains up to 193 mA (830 mW ÷ 4.3 V) continuously in regulation, decreasing linearly with rising junction temperature per the 150 °C Tj limit and 330 K/W thermal resistance.
Can BZT52H-B4V3,115 be used in place of a 3.3 V Zener diode?
No-it is a 4.3 V nominal Zener and will not regulate at 3.3 V. Attempting to force 3.3 V operation results in insufficient reverse bias, causing high leakage (>100 μA) and unstable clamping. For 3.3 V regulation, use BZT52H-B3V3,115 (3.23–3.37 V range) or equivalent.
How does the SOD123F package differ from standard SOD-123 in thermal performance?
SOD123F features a flatter lead profile and optimized internal thermal path, achieving Rth(j-sp) = 150 K/W versus ~180 K/W for standard SOD-123. This 17 % improvement enhances power handling in reflow-soldered layouts, especially when cathode pad area is limited to 1 cm² per datasheet condition [3].
Is BZT52H-B4V3,115 automotive-qualified?
No-per Nexperia Revision History (Rev. 7), the BZT52H series is explicitly designated as non-automotive qualified. It lacks AEC-Q200 stress testing and automotive-grade process controls. For automotive applications, select Nexperia's BZT52H-Q series (e.g., BZT52H-QB4V3,115) with full qualification documentation.
BZT52H-B4V3,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- BZT52H
- Package/Case:
- SOD-123F
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 4.3 V
- Tolerance:
- ±2%
- Power - Max:
- 375 mW
- Impedance (Max) (Zzt):
- 95 Ohms
- Current - Reverse Leakage @ Vr:
- 3 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If:
- 900 mV @ 10 mA
- Operating Temperature:
- -65°C ~ 150°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-123F
BZT52H-B4V3,115 FAQ
1.How can I place an order for BZT52H-B4V3,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BZT52H-B4V3,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BZT52H-B4V3,115 reliable?
The price and inventory of BZT52H-B4V3,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZT52H-B4V3,115 is usually 5 days.
3.What payment methods are accepted for BZT52H-B4V3,115?
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BZT52H-B4V3,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BZT52H-B4V3,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BZT52H-B4V3,115?
For technical support, including BZT52H-B4V3,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZT52H-B4V3,115 requirements.
6.How does Aetrix verify that BZT52H-B4V3,115 is sourced from the original manufacturer or authorized distributors?
All BZT52H-B4V3,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZT52H-B4V3,115 meets industry standards.
7.What is the process for return or replacement of BZT52H-B4V3,115?
All BZT52H-B4V3,115 units undergo pre-shipment inspection (PSI). If there is an issue with BZT52H-B4V3,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BZT52H-B4V3,115 part is unused and in its original packaging.
Return procedure for BZT52H-B4V3,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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