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Nexperia USA Inc. BZT52H-B4V3,115

Part No.:
BZT52H-B4V3,115
Manufacturer:
Nexperia USA Inc.
Category:
Single Zener Diodes
Package:
SOD-123F
Datasheet:
AetrixBZT52H-B4V3,115.pdf
Description:
DIODE ZENER 4.3V 375MW SOD123F
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,926

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Product details

Overview

BZT52H-B4V3,115 from Nexperia is a ±2 % tolerance Zener diode in SOD123F package, rated for 4.3 V nominal breakdown voltage at 5 mA, 830 mW total power dissipation, and 150 °C maximum junction temperature-used for precision voltage reference and overvoltage clamping in low-power analog signal conditioning circuits.

For engineers reviewing the BZT52H-B4V3,115 datasheet, BZT52H-B4V3,115 pinout, BZT52H-B4V3,115 application, or BZT52H-B4V3,115 equivalent, this page delivers verified Zener parameters, thermal resistance (Rth(j-a) = 330 K/W), differential resistance (95 Ω max), reverse current (3 μA max at 1 V), and cathode/anode terminal mapping per official Nexperia Rev. 7 specification.

Technical Context

This Zener diode operates in reverse-bias breakdown mode with a tightly controlled 4.3 V regulation point at IZ = 5 mA, exhibiting a temperature coefficient of −3.5 to 0.0 mV/K across its operating range. Its low 95 Ω typical differential resistance ensures stable output under varying load currents.

Designed for surface-mount use on FR4 PCBs with single-sided copper, it supports pulsed surge handling up to 40 W (100 μs) and maintains thermal integrity via Rth(j-sp) = 150 K/W to solder point-critical for reliability in compact power-supply feedback paths and ESD protection networks.

Key Specifications

Parameter Value and Actual Design Meaning
Breakdown Voltage VZ 4.21 V to 4.39 V at IZ = 5 mA - defines precise clamping threshold for 3.3 V/5 V rail monitoring
Tolerance ±2 % - enables tighter regulation than ±5 % variants in feedback loops requiring <1% error budget
Differential Resistance rdif ≤ 95 Ω - minimizes output voltage shift under dynamic load changes in reference circuits
Reverse Current IR ≤ 3 μA at VR = 1 V - ensures low leakage in high-impedance bias networks
Total Power Dissipation Ptot 830 mW at Tamb ≤ 25 °C - supports continuous operation in thermally constrained SMT layouts
Junction Temperature Tj −65 °C to +150 °C - qualifies for industrial ambient environments without derating below 85 °C
Forward Voltage VF ≤ 0.9 V at IF = 10 mA - allows use as polarity-sensitive clamp in bidirectional protection schemes

Pinout & Package

The BZT52H-B4V3,115 is housed in a SOD123F plastic surface-mount package (3.6 mm × 2.7 mm × 1.2 mm), featuring flat leads optimized for reflow soldering on FR4 PCBs with standard footprint per Figure 12.

Pin/Terminal Circuit Role Design Meaning
1 Cathode (K) Connected to regulated output node; marking bar identifies this terminal for correct orientation during placement
2 Anode (A) Ground or lower-potential reference point; reverse-bias connection establishes Zener conduction path

Key Features

Feature Design Value
Power rating 830 mW at 25 °C ambient - enables higher current regulation than 500 mW SOD-123 variants without thermal runaway
Voltage tolerance ±2 % - reduces binning overhead and improves yield in precision voltage monitor designs
Thermal resistance Rth(j-a) = 330 K/W - allows direct thermal modeling for PCB layout optimization in space-constrained modules
Surge capability IZSM = 6.0 A (100 μs pulse) - provides robust transient suppression in I/O line protection applications
Capacitance Cd = 450 pF at f = 1 MHz - limits high-frequency noise coupling in RF-adjacent analog sections

Applications

Power Supply Feedback Reference Microcontroller I/O Clamp

Use Scenario: Stabilizing feedback voltage in adjustable DC-DC converter ICs (e.g., TLV62568) where output accuracy depends on reference stability.

IC Role / Device Role / Timing Role: Zener diode acts as shunt voltage reference, sinking excess current to maintain fixed VREF at error amplifier input.

Use Value: ±2 % tolerance and 95 Ω rdif limit output drift to <±12 mV across 0–100 mA load steps-meeting Class II regulation requirements.

Use Scenario: Protecting 3.3 V GPIO pins against ESD and overvoltage transients from external sensors or connectors.

IC Role / Device Role / Timing Role: Bidirectional clamping device, conducting reverse current above 4.3 V and forward current above 0.9 V to limit pin excursion.

Use Value: 6.0 A non-repetitive surge rating absorbs IEC 61000-4-2 Level 4 (8 kV contact) events without degradation.

Low-Power Sensor Biasing ADC Reference Stabilization

Use Scenario: Providing stable excitation voltage to resistive temperature detectors (RTDs) in battery-powered environmental monitors.

IC Role / Device Role / Timing Role: Precision shunt regulator establishing 4.3 V bias across sensor bridge, independent of supply variation.

Use Value: 3 μA max reverse leakage at 1 V ensures <10 nA error contribution in 100 kΩ bridge arms-preserving 16-bit measurement resolution.

Use Scenario: Decoupling reference input of SAR ADCs (e.g., ADS7953) from digital noise coupling on shared VDD rails.

IC Role / Device Role / Timing Role: Low-noise voltage clamp filtering high-frequency switching noise while maintaining DC reference level.

Use Value: 450 pF capacitance forms effective RC filter with 100 Ω series resistor, attenuating >10 MHz noise by >40 dB before ADC REF pin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
BZT52C4V3,115 ±5 % tolerance, 4.1 V–4.5 V range, 95 Ω rdif, same SOD123F package Higher initial tolerance increases calibration burden in closed-loop feedback; acceptable for non-critical biasing Select when cost sensitivity outweighs regulation precision; verify system-level error budget permits ±5 % drift
MMSZ4V3T1G ±5 % tolerance, 4.08–4.52 V range, 90 Ω rdif, SOD-123 package (slightly larger footprint) Higher thermal resistance (Rth(j-a) ≈ 400 K/W) reduces power handling at elevated ambient temperatures Choose only if legacy design uses ON Semiconductor footprint; confirm PCB pad revision accommodates 3.7 mm length

Compared with BZT52H-B4V3,115, the ±2 % BZT52C4V3,115 trades tighter regulation for lower unit cost, while MMSZ4V3T1G offers comparable rdif but requires thermal derating above 60 °C ambient due to inferior package thermal performance.

Availability

BZT52H-B4V3,115 is available at Aetrix Electronics and suitable for voltage reference, I/O protection, and sensor biasing applications requiring stable component supply across industrial control, test equipment, and IoT endpoint designs.

Supply support for BZT52H-B4V3,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, headquartered in Nijmegen, Netherlands.

The BZT52H series belongs to Nexperia's general-purpose Zener diode product line, engineered specifically for stable voltage regulation and transient suppression in cost-sensitive, space-constrained SMT applications across consumer, industrial, and computing markets.

FAQ

What is the maximum continuous reverse current the BZT52H-B4V3,115 can sustain?

The device does not specify a maximum continuous reverse current rating; instead, its safe operating area is defined by power dissipation limits. At 25 °C ambient, it sustains up to 193 mA (830 mW ÷ 4.3 V) continuously in regulation, decreasing linearly with rising junction temperature per the 150 °C Tj limit and 330 K/W thermal resistance.

Can BZT52H-B4V3,115 be used in place of a 3.3 V Zener diode?

No-it is a 4.3 V nominal Zener and will not regulate at 3.3 V. Attempting to force 3.3 V operation results in insufficient reverse bias, causing high leakage (>100 μA) and unstable clamping. For 3.3 V regulation, use BZT52H-B3V3,115 (3.23–3.37 V range) or equivalent.

How does the SOD123F package differ from standard SOD-123 in thermal performance?

SOD123F features a flatter lead profile and optimized internal thermal path, achieving Rth(j-sp) = 150 K/W versus ~180 K/W for standard SOD-123. This 17 % improvement enhances power handling in reflow-soldered layouts, especially when cathode pad area is limited to 1 cm² per datasheet condition [3].

Is BZT52H-B4V3,115 automotive-qualified?

No-per Nexperia Revision History (Rev. 7), the BZT52H series is explicitly designated as non-automotive qualified. It lacks AEC-Q200 stress testing and automotive-grade process controls. For automotive applications, select Nexperia's BZT52H-Q series (e.g., BZT52H-QB4V3,115) with full qualification documentation.

BZT52H-B4V3,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
BZT52H
Package/Case:
SOD-123F
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
4.3 V
Tolerance:
±2%
Power - Max:
375 mW
Impedance (Max) (Zzt):
95 Ohms
Current - Reverse Leakage @ Vr:
3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If:
900 mV @ 10 mA
Operating Temperature:
-65°C ~ 150°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-123F

BZT52H-B4V3,115 FAQ

1.How can I place an order for BZT52H-B4V3,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BZT52H-B4V3,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BZT52H-B4V3,115 reliable?

The price and inventory of BZT52H-B4V3,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZT52H-B4V3,115 is usually 5 days.

3.What payment methods are accepted for BZT52H-B4V3,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZT52H-B4V3,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BZT52H-B4V3,115?

BZT52H-B4V3,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BZT52H-B4V3,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BZT52H-B4V3,115?

For technical support, including BZT52H-B4V3,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZT52H-B4V3,115 requirements.

6.How does Aetrix verify that BZT52H-B4V3,115 is sourced from the original manufacturer or authorized distributors?

All BZT52H-B4V3,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZT52H-B4V3,115 meets industry standards.

7.What is the process for return or replacement of BZT52H-B4V3,115?

All BZT52H-B4V3,115 units undergo pre-shipment inspection (PSI). If there is an issue with BZT52H-B4V3,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BZT52H-B4V3,115 part is unused and in its original packaging.

Return procedure for BZT52H-B4V3,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BZT52H-B4V3,115 Tags

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