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Nexperia USA Inc. BZT52H-B4V7,115
- Part No.:
- BZT52H-B4V7,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Zener Diodes
- Package:
- SOD-123F
- Datasheet:
-
BZT52H-B4V7,115.pdf
- Description:
- DIODE ZENER 4.7V 375MW SOD123F
- Quantity:
- Payment:
- Shipping:
Inventory:1,234
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Product details
Overview
BZT52H-B4V7,115 from Nexperia is a ±2 % tolerance Zener diode in SOD123F package, rated for 4.7 V nominal breakdown voltage at 5 mA, 830 mW total power dissipation, and 150 °C maximum junction temperature-used for precision voltage reference and overvoltage protection in low-power analog supply rails.
For engineers reviewing the BZT52H-B4V7,115 datasheet, BZT52H-B4V7,115 pinout, BZT52H-B4V7,115 application, or BZT52H-B4V7,115 equivalent, this page delivers verified Zener parameters, thermal resistance (150 K/W junction-to-solder-point), differential resistance (78 Ω), temperature coefficient (–3.5 to +0.2 mV/K), and cathode/anode terminal mapping per official Nexperia Rev. 7 specification.
Technical Context
This Zener diode operates in reverse-bias breakdown mode with tightly controlled VZ = 4.61 V to 4.79 V at IZ = 5 mA and exhibits low dynamic impedance (rdif ≤ 78 Ω) for stable regulation under varying load conditions. Its SOD123F package enables surface-mount integration on FR4 PCBs with single-sided copper and tin-plated pads.
Thermal performance is defined by Rth(j-sp) = 150 K/W (junction-to-solder-point) and Rth(j-a) = 330 K/W (junction-to-ambient), supporting reliable operation up to Tj = 150 °C. Reverse leakage remains ≤3 μA at VR = 3.5 V, ensuring minimal quiescent current in standby circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage (VZ) | 4.61 V to 4.79 V at IZ = 5 mA - defines precise clamping threshold for 4.7 V rail stabilization |
| Tolerance | ±2 % - ensures predictable voltage margin without post-production trimming |
| Total Power Dissipation (Ptot) | 830 mW at Tamb ≤ 25 °C - supports continuous regulation in compact layouts with 1 cm² cathode pad |
| Differential Resistance (rdif) | ≤ 78 Ω - minimizes output voltage shift under load transients (ΔVZ = rdif × ΔIZ) |
| Forward Voltage (VF) | ≤ 0.9 V at IF = 10 mA - enables use as polarity-sensitive clamp or ESD path in forward bias |
| Temperature Coefficient (SZ) | –3.5 mV/K to +0.2 mV/K - indicates negative-to-slightly-positive drift across operating current range |
| Junction Temperature (Tj) | –65 °C to +150 °C - validates suitability for industrial ambient environments |
Pinout & Package
SOD123F is a 2-lead surface-mount plastic package measuring 3.6 mm × 1.7 mm × 1.0 mm (L × W × H), with cathode marked by a bar on the device body and optimized for reflow soldering only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (K) | Connected to regulated output node; marking bar identifies this terminal for correct PCB orientation |
| 2 | Anode (A) | Connected to ground or lower-potential reference; reverse-bias current flows from cathode to anode during regulation |
Key Features
| Feature | Design Value |
|---|---|
| High-precision voltage reference | ±2 % VZ tolerance enables direct replacement of trimmed references in cost-sensitive designs |
| Low thermal resistance mounting | Rth(j-sp) = 150 K/W allows effective heat transfer to PCB copper, sustaining 830 mW at elevated ambient |
| Stable temperature coefficient | –3.5 to +0.2 mV/K across IZ = 1–5 mA reduces drift-induced error in temperature-varying environments |
| Robust surge handling | Non-repetitive peak reverse current IZSM = 6.0 A (tp = 100 μs) protects against transient overvoltage events |
| Compact SMD footprint | SOD123F outline (3.6 × 1.7 mm) fits high-density layouts while maintaining 0.55 mm lead pitch for manufacturable solder joints |
Applications
| Power Supply Reference | Overvoltage Clamp |
|---|---|
Use Scenario: Providing stable 4.7 V reference for ADC voltage dividers and op-amp bias networks in battery-powered sensor nodes. IC Role / Device Role / Timing Role: Zener diode operating in reverse breakdown to fix reference potential relative to ground. Use Value: Delivers <±2 % accuracy without external trimming, reducing BOM count and calibration steps. |
Use Scenario: Protecting microcontroller I/O pins from ESD or inductive kickback in automotive body control modules. IC Role / Device Role / Timing Role: Fast-acting shunt clamp that conducts above 4.79 V to limit voltage excursion. Use Value: Limits transient overshoot to ≤4.79 V with 6.0 A non-repetitive surge capability and sub-100 ns response. |
| Low-Power Voltage Monitor | Signal Level Shifter |
Use Scenario: Detecting brown-out conditions in 5 V logic rails using comparator input referenced to BZT52H-B4V7,115. IC Role / Device Role / Timing Role: Stable Zener voltage sets trip point for undervoltage detection circuitry. Use Value: Enables accurate 4.7 V threshold with <3 μA leakage at 3.5 V, minimizing false triggers. |
Use Scenario: Translating 3.3 V logic signals to 4.7 V levels for interfacing with legacy peripherals. IC Role / Device Role / Timing Role: Forward-biased diode drop (≤0.9 V) combined with Zener clamping establishes bidirectional level-shift window. Use Value: Achieves clean 3.3 V → 4.7 V translation using single-device passive topology with no active components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZT52C4V7,115 | ±5 % tolerance, higher rdif (≤100 Ω), same SOD123F package and VZ range | Acceptable where tighter regulation not required; lower cost for non-critical references | Select when ±5 % VZ margin suffices and cost optimization is prioritized over stability |
| MMSZ4702T1G | ±5 % tolerance, SOD-123 package (identical mechanical outline), 500 mW Ptot, 100 Ω rdif | Limited power handling; unsuitable for sustained 830 mW loads or high-surge environments | Choose only for space-constrained designs requiring identical footprint but accepting reduced thermal margin |
Compared with BZT52C4V7,115 and MMSZ4702T1G, the BZT52H-B4V7,115 offers superior voltage precision (±2 % vs. ±5 %), lower dynamic impedance (78 Ω vs. ≥100 Ω), and higher power rating (830 mW vs. 500 mW), making it optimal for applications demanding stable regulation under variable load and temperature.
Availability
BZT52H-B4V7,115 is available at Aetrix Electronics and suitable for voltage reference design, overvoltage protection circuits, and low-power signal conditioning requiring stable component supply and traceable sourcing.
Supply support for BZT52H-B4V7,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.
The BZT52H series belongs to Nexperia's general-purpose Zener diode product line, engineered for precision voltage regulation and transient suppression in cost-sensitive, high-yield consumer and industrial electronics.
FAQ
What is the maximum reverse current the BZT52H-B4V7,115 can handle during transient events?
The BZT52H-B4V7,115 supports a non-repetitive peak reverse current (IZSM) of 6.0 A at tp = 100 μs and Tj = 25 °C, as specified in Table 8 of the Rev. 7 datasheet. This rating applies only to short-duration surges and must be derated for repeated events or elevated junction temperatures.
How does the temperature coefficient affect regulation accuracy across –40 °C to +85 °C ambient?
At IZ = 5 mA, the temperature coefficient ranges from –3.5 mV/K to +0.2 mV/K. Over a 125 K junction temperature swing, worst-case VZ drift is approximately ±0.44 V-within the ±2 % initial tolerance band-making it suitable for industrial-grade reference stability without active compensation.
Can the BZT52H-B4V7,115 be used in forward-bias configurations?
Yes: its forward voltage is ≤0.9 V at IF = 10 mA (Table 1), enabling use as a low-drop rectifier or ESD protection diode in series with signal lines. However, forward conduction is not its primary function; regulation occurs exclusively in reverse breakdown.
Is the SOD123F package compatible with standard reflow profiles for lead-free assembly?
Yes-the datasheet explicitly states reflow soldering is the only recommended method, and Figure 12 provides the exact solder land pattern (2.9 × 1.6 mm occupied area, dual 1.1 mm pads). The package withstands JEDEC J-STD-020-compliant peak temperatures up to 260 °C for ≤60 seconds.
BZT52H-B4V7,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- BZT52H
- Package/Case:
- SOD-123F
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 4.7 V
- Tolerance:
- ±2%
- Power - Max:
- 375 mW
- Impedance (Max) (Zzt):
- 78 Ohms
- Current - Reverse Leakage @ Vr:
- 3 µA @ 2 V
- Voltage - Forward (Vf) (Max) @ If:
- 900 mV @ 10 mA
- Operating Temperature:
- -65°C ~ 150°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-123F
BZT52H-B4V7,115 FAQ
1.How can I place an order for BZT52H-B4V7,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BZT52H-B4V7,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BZT52H-B4V7,115 reliable?
The price and inventory of BZT52H-B4V7,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZT52H-B4V7,115 is usually 5 days.
3.What payment methods are accepted for BZT52H-B4V7,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZT52H-B4V7,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BZT52H-B4V7,115?
BZT52H-B4V7,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BZT52H-B4V7,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BZT52H-B4V7,115?
For technical support, including BZT52H-B4V7,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZT52H-B4V7,115 requirements.
6.How does Aetrix verify that BZT52H-B4V7,115 is sourced from the original manufacturer or authorized distributors?
All BZT52H-B4V7,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZT52H-B4V7,115 meets industry standards.
7.What is the process for return or replacement of BZT52H-B4V7,115?
All BZT52H-B4V7,115 units undergo pre-shipment inspection (PSI). If there is an issue with BZT52H-B4V7,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BZT52H-B4V7,115 part is unused and in its original packaging.
Return procedure for BZT52H-B4V7,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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