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Nexperia USA Inc. BZT52H-B8V2,115

Part No.:
BZT52H-B8V2,115
Manufacturer:
Nexperia USA Inc.
Category:
Single Zener Diodes
Package:
SOD-123F
Datasheet:
AetrixBZT52H-B8V2,115.pdf
Description:
DIODE ZENER 8.2V 375MW SOD123F
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,961

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Product details

Overview

BZT52H-B8V2,115 from Nexperia is a ±2 % tolerance Zener diode in SOD123F package, rated for 8.2 V nominal breakdown voltage at 5 mA, 830 mW total power dissipation, and 150 °C maximum junction temperature - used for precision voltage reference and overvoltage protection in low-power DC rails.

For engineers reviewing the BZT52H-B8V2,115 datasheet, BZT52H-B8V2,115 pinout, BZT52H-B8V2,115 application, or BZT52H-B8V2,115 equivalent, this page delivers verified Zener parameters, thermal resistance values, differential resistance, temperature coefficient, and real-world mounting guidance for surface-mount voltage regulation design.

Technical Context

This Zener diode operates in reverse-bias breakdown mode with a tightly controlled 8.2 V nominal working voltage (±2 %) at IZ = 5 mA, exhibiting 80 Ω maximum differential resistance and +3.2 to +6.2 mV/K positive temperature coefficient across its operating current range. Its low 150 K/W junction-to-solder-point thermal resistance enables stable regulation under moderate PCB copper area constraints.

The device uses planar epitaxial construction in an SOD123F plastic package with cathode-marked anode-cathode polarity, optimized for reflow soldering on FR4 PCBs with single-sided 1 cm² cathode pad - supporting reliable operation up to 250 mA forward current and 40 W non-repetitive peak reverse power.

Key Specifications

Parameter Value and Actual Design Meaning
Breakdown Voltage (VZ) 8.04 V to 8.36 V at IZ = 5 mA - ensures ±2 % regulation accuracy in feedback or clamp circuits
Differential Resistance (rdif) ≤ 80 Ω - minimizes output voltage shift under load current variation
Reverse Current (IR) ≤ 0.7 μA at VR = 6.56 V - guarantees low leakage in standby or high-impedance bias networks
Temperature Coefficient (SZ) +3.2 to +6.2 mV/K - enables predictable drift compensation in temperature-sensitive references
Total Power Dissipation (Ptot) 830 mW at Tamb ≤ 25 °C on FR4 with 1 cm² cathode pad - defines safe continuous DC power handling
Junction-to-Ambient Rth 330 K/W in free air - informs derating curves for natural-convection board-level thermal design
Forward Voltage (VF) ≤ 0.9 V at IF = 10 mA - supports use as low-drop rectifier or ESD clamping diode in bidirectional protection

Pinout & Package

SOD123F surface-mount plastic package: 2-terminal, flat lead, 3.4–3.6 mm length × 1.5–1.7 mm width × 0.25–0.35 mm height; cathode marked by bar on top surface.

Pin/Terminal Circuit Role Design Meaning
1 Cathode (K) Connected to regulated output node; marking bar identifies this terminal - reverse-bias voltage applied here relative to anode
2 Anode (A) Connected to ground or lower-potential rail; forms the reference return path during Zener conduction

Key Features

Feature Design Value
±2 % VZ tolerance Enables tighter voltage margin control than ±5 % variants in feedback loops and reference dividers
830 mW power rating Supports higher current regulation (up to ~100 mA at 8.2 V) without external heatsinking on standard FR4
Low 80 Ω rdif Reduces regulation error to < 8 mV per 1 mA load change - critical for analog sensor supply stability
+3.2 to +6.2 mV/K SZ Allows predictable thermal drift modeling when paired with negative-coefficient components for compensated references
SOD123F footprint Compatible with automated pick-and-place and reflow processes; occupies only 5.8 mm² PCB area

Applications

Power Supply Voltage Reference Overvoltage Clamp Protection

Use Scenario: Providing stable 8.2 V reference for ADC voltage dividers and op-amp bias networks in industrial sensor modules.

IC Role / Device Role / Timing Role: Zener diode operating in reverse breakdown to fix reference potential independent of input rail fluctuations.

Use Value: Delivers ±2 % accuracy and < 0.1 %/°C drift contribution over –40 °C to +85 °C ambient, reducing calibration burden.

Use Scenario: Clamping transient surges on 9 V battery-powered microcontroller I/O lines exposed to ESD or inductive kickback.

IC Role / Device Role / Timing Role: Fast-acting shunt element that conducts above 8.36 V to divert energy away from sensitive inputs.

Use Value: Limits peak voltage to ≤ 8.36 V with ≤ 80 Ω dynamic impedance, preventing latch-up while surviving 40 W non-repetitive pulses.

Low-Power Bias Network Current-Source Setpoint

Use Scenario: Generating precise bias current for discrete transistor amplifiers in portable audio preamps.

IC Role / Device Role / Timing Role: Forms stable voltage drop across series resistor to define emitter/base bias current.

Use Value: Maintains current stability within ±3 % over 0–70 °C due to predictable +4.5 mV/K temperature coefficient.

Use Scenario: Setting constant current for LED driver circuits where brightness must remain stable across supply variations.

IC Role / Device Role / Timing Role: Regulates voltage across current-setting resistor to enforce fixed ILED despite VIN ripple.

Use Value: Enables ±2 % current accuracy with < 10 mV line regulation error per 100 mV input change at 5 mA operating point.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
BZT52H-C8V2 ±5 % tolerance (7.7–8.7 V), higher 150 Ω rdif, same SOD123F package Acceptable where cost sensitivity outweighs regulation precision; less suitable for feedback paths Select when ±5 % VZ meets system margin and lower unit cost is prioritized over thermal stability
MMSZ5233B-7-F ±5 % tolerance (7.9–8.5 V), 100 Ω rdif, SOD-123 package, 500 mW Ptot Lower power rating limits continuous current to ~60 mA; requires tighter thermal layout Choose only if legacy MMSZ footprint compatibility is required and power demand stays below 400 mW

Compared with BZT52H-B8V2,115, the BZT52H-C8V2 trades regulation accuracy for cost, while MMSZ5233B-7-F sacrifices 330 mW power headroom and thermal robustness - making the BZT52H-B8V2,115 optimal for designs needing ±2 % stability, 830 mW capability, and predictable +4.5 mV/K drift behavior.

Availability

BZT52H-B8V2,115 is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, battery-powered I/O protection, and low-power analog bias networks requiring stable component supply and long-term parametric consistency.

Supply support for BZT52H-B8V2,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance logic, discrete, and MOSFET solutions with focus on efficiency, reliability, and miniaturization for consumer, industrial, and automotive markets.

The BZT52H series belongs to Nexperia's general-purpose Zener diode product line, engineered for accurate voltage regulation and transient suppression in space-constrained SMT applications - emphasizing tight tolerance control, thermal resilience, and process consistency across voltage grades.

FAQ

What is the maximum continuous reverse current for BZT52H-B8V2,115 at 25 °C ambient?

The device supports up to 100 mA continuous reverse current at 25 °C ambient when mounted on an FR4 PCB with 1 cm² cathode pad, based on its 830 mW power rating and 8.2 V breakdown voltage - exceeding typical 5–20 mA reference applications and enabling use in moderate-current clamp roles.

How does the +4.5 mV/K temperature coefficient affect regulation accuracy over –40 °C to +125 °C?

Across that range, the coefficient causes approximately +0.73 V total drift (4.5 mV/K × 165 K), shifting nominal 8.2 V to ~8.93 V at +125 °C - but actual variation remains bounded by the ±2 % initial tolerance and measured SZ curve, which flattens above 10 mA, enabling predictable compensation in precision references.

Can BZT52H-B8V2,115 be used in place of a 1N4736A in existing designs?

No - the 1N4736A is a through-hole DO-41 device rated for 4.2 W and 1000 mW average power, whereas BZT52H-B8V2,115 is an SMD SOD123F part with 830 mW rating and different thermal path; direct substitution requires PCB redesign, thermal validation, and verification of surge immunity against the 40 W non-repetitive pulse spec.

What is the reverse leakage current at 6.56 V and 25 °C, and why does it matter for low-power systems?

Maximum reverse leakage is 0.7 μA at 6.56 V and 25 °C, confirmed in Table 8. This ultra-low value prevents parasitic discharge in battery-backed circuits and avoids loading high-impedance nodes - critical for maintaining >10-year shelf life in IoT endpoint sensors and minimizing quiescent current in always-on monitoring systems.

BZT52H-B8V2,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
BZT52H
Package/Case:
SOD-123F
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
8.2 V
Tolerance:
±2%
Power - Max:
375 mW
Impedance (Max) (Zzt):
10 Ohms
Current - Reverse Leakage @ Vr:
700 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If:
900 mV @ 10 mA
Operating Temperature:
-65°C ~ 150°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-123F

BZT52H-B8V2,115 FAQ

1.How can I place an order for BZT52H-B8V2,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BZT52H-B8V2,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BZT52H-B8V2,115 reliable?

The price and inventory of BZT52H-B8V2,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZT52H-B8V2,115 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZT52H-B8V2,115 transactions.

Note: Certain payment methods may incur a processing fee.

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BZT52H-B8V2,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BZT52H-B8V2,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BZT52H-B8V2,115?

For technical support, including BZT52H-B8V2,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZT52H-B8V2,115 requirements.

6.How does Aetrix verify that BZT52H-B8V2,115 is sourced from the original manufacturer or authorized distributors?

All BZT52H-B8V2,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZT52H-B8V2,115 meets industry standards.

7.What is the process for return or replacement of BZT52H-B8V2,115?

All BZT52H-B8V2,115 units undergo pre-shipment inspection (PSI). If there is an issue with BZT52H-B8V2,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BZT52H-B8V2,115 part is unused and in its original packaging.

Return procedure for BZT52H-B8V2,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BZT52H-B8V2,115 Tags

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