Diodes Incorporated BZT52HC13WFQ-7

Overview

BZT52HC13WFQ from Diodes Incorporated is a surface-mount Zener diode with nominal zener voltage 13 V (12.4–14.1 V range), 10 Ω maximum zener impedance at 5 mA, and ±0.1 µA maximum reverse leakage at 8 V. It delivers 830 mW power dissipation on 1 cm² cathode pad and operates from –65 °C to +150 °C, used for precision voltage regulation in automotive power supply rails.

For engineers reviewing the BZT52HC13WFQ datasheet, BZT52HC13WFQ pinout, BZT52HC13WFQ application, or BZT52HC13WFQ equivalent, key selection criteria include zener voltage tolerance, thermal resistance (150 °C/W), AEC-Q101 qualification, SOD123F package footprint, and low-profile flat-lead construction for high-density PCB layouts.

Technical Context

This Zener diode functions as a two-terminal voltage reference device operating in reverse breakdown mode. Its 13 V nominal zener voltage is specified at 5 mA test current, with temperature coefficient of +7.0 to +11.0 mV/°C-indicating positive drift over temperature-and total capacitance ≤80 pF at 1 MHz and 0 V bias.

The device uses a planar epitaxial junction structure with matte tin–annealed copper alloy leadframe. It achieves 830 mW power dissipation only when mounted on FR-4 PCB with 1 cm² cathode thermal pad, versus 375 mW on minimum recommended pad layout-highlighting thermal design dependency.

Key Specifications

Pinout & Package

Package: SOD123F - flat-lead, low-profile surface-mount package with cathode band marking; dimensions: 1.80 mm width × 2.70 mm length × 0.90 mm height (typical); weight ≈0.015 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Compared with MMSZ5242B-TP and BZX84-C13, BZT52HC13WFQ offers tighter voltage tolerance (±0.85 V), lowest zener impedance (10 Ω), and smallest footprint-making it optimal for space-constrained, high-stability automotive voltage references where thermal performance and qualification are mandatory.

Availability

BZT52HC13WFQ is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC analog protection circuits, infotainment power sequencing, and medical sensor signal conditioning requiring stable component supply and full AEC-Q101 traceability.

Supply support for BZT52HC13WFQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with manufacturing certified to IATF 16949 and quality systems aligned to AEC-Q101 standards.

The BZT52HC series belongs to Diodes' automotive-qualified Zener diode product line, engineered specifically for robust voltage regulation in harsh-environment electronic control units where reliability, thermal performance, and regulatory compliance are non-negotiable.

FAQ

What is the maximum power dissipation of BZT52HC13WFQ under standard PCB conditions?

BZT52HC13WFQ delivers 375 mW when mounted on FR-4 PCB using Diodes' minimum recommended pad layout. With a 1 cm² copper pour connected to the cathode terminal, its power rating increases to 830 mW-confirmed per Note 7 in DS41143 Rev. 4-2. Derating begins linearly above +25 °C ambient, reaching zero at +150 °C.

Is BZT52HC13WFQ suitable for use in safety-critical automotive systems?

Yes-BZT52HC13WFQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. Its guaranteed operating range (–65 °C to +150 °C), low leakage (<0.1 µA), and stable zener voltage make it appropriate for ASIL-B–level subsystems such as lighting control and HVAC actuators, though system-level functional safety validation remains the customer's responsibility.

How does the temperature coefficient affect regulation accuracy over temperature?

The BZT52HC13WFQ exhibits a positive temperature coefficient of +7.0 to +11.0 mV/°C at 5 mA. Over a 100 °C span (e.g., –40 °C to +60 °C), this introduces up to ±1.1 V drift-approximately ±8.5% of nominal 13 V. For high-accuracy applications, this must be compensated via circuit design or selected alongside tighter-tolerance references.

What marking code identifies BZT52HC13WFQ on the device body?

BZT52HC13WFQ is marked with "WI" on the top surface of the SOD123F package. This two-character code corresponds exclusively to the 12.4–14.1 V zener voltage range per Diodes' Electrical Characteristics Table in DS41143 Rev. 4-2, and is distinct from adjacent variants like WF (10 V) or WG (11 V).