Nexperia USA Inc. BZT52H-C18,115

Overview

BZT52H-C18,115 from Nexperia is a ±5 % tolerance Zener diode in SOD123F package, rated for 18 V nominal breakdown voltage at I_Z = 5 mA, with 830 mW total power dissipation and 170 Ω maximum differential resistance. It provides precision voltage regulation in low-power analog reference and overvoltage protection circuits.

For engineers reviewing the BZT52H-C18,115 datasheet, BZT52H-C18,115 pinout, BZT52H-C18,115 application, or BZT52H-C18,115 equivalent, key selection criteria include Zener voltage tolerance (±5 %), thermal resistance (150 K/W junction-to-solder-point), reverse current (≤1 μA at VR = 14.4 V), and SOD123F footprint compatibility with automated SMT assembly.

Technical Context

This device operates as a two-terminal shunt voltage regulator, maintaining stable output voltage across variable load currents by conducting reverse current above its specified Zener breakdown threshold. Its temperature coefficient of +12.6 mV/K at I_Z = 5 mA enables predictable drift compensation in bias networks.

The SOD123F package supports high-density PCB layouts with 1.5 mm × 2.5 mm body size and 0.55 mm lead pitch. Thermal performance is defined under standardized FR4 mounting conditions: 1 cm² cathode pad for 830 mW rating and 150 K/W R_th(j-sp) to solder point.

Key Specifications

Pinout & Package

SOD123F surface-mount plastic package: 2-lead, flat lead, 1.5 mm × 2.5 mm body, 0.55 mm lead pitch, cathode marked by bar.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with BZT52H-C18,115, the Diodes Inc. and MCC alternatives offer identical voltage tolerance and package but sacrifice 330 mW power headroom and 180 K/W thermal resistance margin-critical for sustained 18 V regulation in thermally constrained industrial PCBs.

Availability

BZT52H-C18,115 is available at Aetrix Electronics and suitable for industrial sensor interfaces, battery-powered data loggers, automotive interior lighting modules, and embedded voltage monitor circuits requiring stable component supply with traceable sourcing and long-term lifecycle support.

Supply support for BZT52H-C18,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, headquartered in Nijmegen, Netherlands, with manufacturing in Europe and Asia.

The BZT52H series belongs to Nexperia's general-purpose Zener diode product line, engineered for cost-effective voltage regulation and protection in consumer, industrial, and computing applications where ±1 % to ±5 % tolerance is acceptable.

FAQ

What is the maximum continuous reverse current the BZT52H-C18,115 can sustain at 25 °C ambient?

The device sustains up to 46.3 mA continuous reverse current at 25 °C ambient, calculated from its 830 mW power rating and 18 V nominal Zener voltage (I_Z(max) = P_tot/V_Z). This assumes FR4 PCB mounting with 1 cm² cathode pad per datasheet condition [3]. Derating is required above 25 °C per the 150 K/W junction-to-solder-point thermal resistance.

How does the +12.6 mV/K temperature coefficient affect circuit performance in a 0–70 °C operating range?

The +12.6 mV/K coefficient causes a +630 mV total Zener voltage increase from 0 °C to 70 °C, shifting the regulation band from 16.8–19.1 V at 25 °C to approximately 17.4–19.7 V at 70 °C. This drift must be accommodated in reference-critical designs via calibration or complementary TC components.

Can the BZT52H-C18,115 replace older BZT52C18 variants in existing SOD-123 footprints?

Yes-the BZT52H-C18,115 uses the identical SOD123F package with same 1.5 mm × 2.5 mm outline and 0.55 mm lead pitch as legacy SOD-123, ensuring mechanical drop-in replacement. Electrical differences include higher 830 mW rating (vs. 500 mW) and tighter 170 Ω r_dif, improving load regulation.

What is the non-repetitive peak reverse current rating, and under what test conditions is it specified?

The non-repetitive peak reverse current is 1.5 A, measured at t_p = 100 μs square wave pulse with T_j = 25 °C prior to surge (Table 8). This rating supports transient suppression in ESD or inductive kick scenarios but requires ≥1 s recovery time between pulses to avoid thermal runaway.