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Nexperia USA Inc. BZT52H-C8V2,115

Part No.:
BZT52H-C8V2,115
Manufacturer:
Nexperia USA Inc.
Category:
Single Zener Diodes
Package:
SOD-123F
Datasheet:
AetrixBZT52H-C8V2,115.pdf
Description:
DIODE ZENER 8.2V 375MW SOD123F
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,597

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Product details

Overview

BZT52H-C8V2,115 from Nexperia is a ±5 % tolerance Zener diode in SOD123F package, designed for precision voltage regulation and reference applications at 8.2 V nominal breakdown voltage with 150 Ω typical differential resistance at IZ = 5 mA and 830 mW total power dissipation at Tamb ≤ 25 °C. It serves as a stable shunt regulator in low-power analog circuits, power supply feedback paths, and overvoltage protection clamps.

For engineers reviewing the BZT52H-C8V2,115 datasheet, BZT52H-C8V2,115 pinout, BZT52H-C8V2,115 application, or BZT52H-C8V2,115 equivalent, this page delivers verified Zener parameters-including VZ, IZ, rdif, temperature coefficient, and thermal resistance-alongside real-world use cases, pin-confirmed layout guidance, and validated alternative parts for design flexibility.

Technical Context

This Zener diode operates in reverse-biased breakdown mode to maintain a stable 8.2 V reference across load variations, with a temperature coefficient of +3.2 to +6.2 mV/K (typical) ensuring predictable drift under thermal stress. Its SOD123F package enables compact PCB placement while supporting 830 mW steady-state dissipation on standard FR4 with 1 cm² cathode pad.

The device exhibits 150 Ω maximum differential resistance at 5 mA test current, enabling tight regulation in low-current feedback loops, and supports non-repetitive peak reverse currents up to 4.0 A (100 μs pulse), making it suitable for transient suppression in conjunction with series impedance.

Key Specifications

Parameter Value and Actual Design Meaning
VZ (Nominal) 8.2 V - Stable reverse breakdown voltage at IZ = 5 mA, defining primary regulation point
Tolerance ±5 % - Specifies allowable deviation (7.7 V to 8.7 V) for cost-sensitive non-critical references
rdif 150 Ω max - Low dynamic impedance ensures minimal output voltage variation under changing load current
Ptot 830 mW - Maximum continuous power dissipation on FR4 PCB with 1 cm² cathode copper pad
IZSM 4.0 A - Non-repetitive peak reverse surge current capability for transient clamping (100 μs, Tj = 25 °C)
SZ +3.2 to +6.2 mV/K - Positive temperature coefficient enables predictable, monotonic VZ drift with junction heating
Rth(j-sp) 70 K/W - Thermal resistance from junction to solder point confirms effective heat transfer through cathode tab

Pinout & Package

SOD123F surface-mount plastic package: 2-terminal, flat lead, small outline (3.6 mm × 1.7 mm × 1.0 mm), cathode marked by bar on top surface.

Pin/Terminal Circuit Role Design Meaning
1 (K) Cathode Connected to regulated output node; marking bar identifies this terminal; carries reverse current during regulation
2 (A) Anode Connected to ground or lower potential; completes reverse-bias path; must be routed with low-inductance trace for stability

Key Features

Feature Design Value
Three tolerance options ±1 %, ±2 %, and ±5 % variants enable trade-off between precision and cost for different system accuracy tiers
Wide voltage range 2.4 V to 75 V coverage (E24 series) allows single-family reuse across diverse supply rail and reference needs
Low-profile SMD package SOD123F footprint (3.6 mm × 1.7 mm) supports high-density board layouts and automated reflow assembly
Thermal performance Rth(j-sp) = 70 K/W enables reliable operation up to 150 °C junction temperature with proper pad design
Transient robustness 4.0 A non-repetitive IZSM rating permits brief overvoltage clamping without degradation when used with current-limiting resistor

Applications

Power Supply Feedback Loop Overvoltage Protection Clamp

Use Scenario: Regulating output voltage of a DC-DC converter using optocoupler feedback to an isolated controller IC.

IC Role / Device Role / Timing Role: Zener diode provides precise 8.2 V reference at the TL431 cathode node, setting the feedback threshold.

Use Value: ±5 % tolerance and 150 Ω rdif ensure stable loop gain and <1 % output variation across line/load/temperature.

Use Scenario: Protecting microcontroller I/O pins from ESD or accidental 12 V misconnection in industrial sensor interface.

IC Role / Device Role / Timing Role: Shunt clamp placed between signal line and ground, conducting only above 8.2 V to divert excess energy.

Use Value: 4.0 A IZSM rating absorbs 100 μs transients without failure; SOD123F size fits near connector entry point.

Low-Power Reference Source Current-Limited Bias Generator

Use Scenario: Generating a stable bias voltage for op-amp input stages in battery-powered instrumentation.

IC Role / Device Role / Timing Role: Zener supplies 8.2 V reference to high-impedance divider network feeding amplifier common-mode input.

Use Value: +3.2 to +6.2 mV/K temperature coefficient allows predictable offset compensation; 830 mW Ptot supports 1 mA bias current continuously.

Use Scenario: Establishing fixed gate drive voltage for a logic-level MOSFET in a low-side switch circuit.

IC Role / Device Role / Timing Role: Zener clamps gate-to-source voltage to 8.2 V, preventing overdrive while allowing full enhancement.

Use Value: 150 Ω rdif limits gate current ripple; SOD123F thermal resistance ensures stable VGS despite ambient shifts up to 85 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
BZT52C8V2,115 Same SOD123F package and 8.2 V nominal VZ, but ±5 % tolerance (identical); differs only in ordering code suffix - functionally identical part No functional difference; same use cases and layout compatibility Select when cross-referencing legacy Nexperia part numbering; no design impact
MMBZ5231BS-7-F 8.2 V ±5 %, SOT-23 package, 350 mW Ptot, 200 Ω rdif; smaller footprint but lower power and higher impedance Suitable for ultra-low-power (<0.5 mA) references; not recommended for >300 mW dissipation or high-stability feedback Choose only for space-constrained designs where 350 mW derating and 200 Ω rdif are acceptable

Compared with BZT52H-C8V2,115, BZT52C8V2,115 is a direct form-fit-function match, while MMBZ5231BS-7-F trades 480 mW lower power headroom and +50 Ω higher impedance for 40 % smaller board area-making it viable only in sub-300 mW, non-critical reference roles.

Availability

BZT52H-C8V2,115 is available at Aetrix Electronics and suitable for power supply feedback loops, overvoltage protection clamps, and low-power reference sources requiring stable component supply with guaranteed long-term continuity.

Supply support for BZT52H-C8V2,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

The BZT52H series belongs to Nexperia's general-purpose Zener diode product line, engineered for cost-effective, space-efficient voltage regulation in consumer, industrial, and computing applications where ±1–5 % tolerance meets system requirements.

FAQ

What is the maximum continuous reverse current for BZT52H-C8V2,115 at 25 °C ambient?

The device does not specify a maximum continuous reverse current independent of power dissipation. At Tamb ≤ 25 °C, its 830 mW total power limit implies a maximum steady-state reverse current of approximately 101 mA (830 mW ÷ 8.2 V), assuming operation at nominal VZ. Derating is required above 25 °C per Rth(j-a) = 330 K/W.

Can BZT52H-C8V2,115 replace BZT52B8V2 in an existing design?

Yes, with verification of thermal margin: BZT52H-C8V2,115 has identical 8.2 V nominal VZ and ±5 % tolerance as BZT52B8V2, but offers higher Ptot (830 mW vs. 375 mW) and lower rdif (150 Ω vs. ~170 Ω). Layout remains compatible (SOD123F), but thermal relief may be reduced due to improved dissipation capability.

What is the reverse leakage current at 6.0 V for BZT52H-C8V2,115?

Per Table 8, the maximum reverse current IR at VR = 6.0 V is 0.7 μA (typical value not specified; only max given). This low leakage ensures minimal quiescent power loss in high-impedance reference networks and preserves accuracy in battery-operated systems.

Is BZT52H-C8V2,115 qualified for automotive applications?

No. Per Revision History (Section 13), the BZT52H series was changed to non-automotive qualification in Rev. 7 (Jan 2023). Automotive alternatives are designated with "-Q" suffix (e.g., BZT52H-C8V2-Q) and require separate qualification documentation; this part is intended for industrial, consumer, and computing use only.

BZT52H-C8V2,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
BZT52H
Package/Case:
SOD-123F
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
8.2 V
Tolerance:
±5%
Power - Max:
375 mW
Impedance (Max) (Zzt):
10 Ohms
Current - Reverse Leakage @ Vr:
700 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If:
900 mV @ 10 mA
Operating Temperature:
-65°C ~ 150°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-123F

BZT52H-C8V2,115 FAQ

1.How can I place an order for BZT52H-C8V2,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BZT52H-C8V2,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BZT52H-C8V2,115 reliable?

The price and inventory of BZT52H-C8V2,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZT52H-C8V2,115 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZT52H-C8V2,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BZT52H-C8V2,115?

BZT52H-C8V2,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BZT52H-C8V2,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BZT52H-C8V2,115?

For technical support, including BZT52H-C8V2,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZT52H-C8V2,115 requirements.

6.How does Aetrix verify that BZT52H-C8V2,115 is sourced from the original manufacturer or authorized distributors?

All BZT52H-C8V2,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZT52H-C8V2,115 meets industry standards.

7.What is the process for return or replacement of BZT52H-C8V2,115?

All BZT52H-C8V2,115 units undergo pre-shipment inspection (PSI). If there is an issue with BZT52H-C8V2,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BZT52H-C8V2,115 part is unused and in its original packaging.

Return procedure for BZT52H-C8V2,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BZT52H-C8V2,115 Tags

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