Nexperia USA Inc. BZV85-C47,133

Overview

BZV85-C47,133 from Nexperia is a medium-power axial-leaded Zener diode in a hermetically sealed SOD66 (DO-41) glass package, rated for 47 V nominal working voltage with ±5 % tolerance, 1.3 W total power dissipation at T_tp = 55 °C, and 60 W non-repetitive peak reverse power handling. It serves as a precision voltage reference or shunt regulator in low-to-medium current stabilization circuits, such as power supply feedback loops and overvoltage protection in industrial sensor interfaces.

For engineers reviewing the BZV85-C47,133 datasheet, BZV85-C47,133 pinout, BZV85-C47,133 application, or BZV85-C47,133 equivalent, key selection criteria include its 47 V Zener voltage tolerance, 100 Ω typical differential resistance at test current, −0.05 µA reverse leakage at 33.9 V, and thermal resistance of 110 K/W (junction-to-tie-point), critical for thermal design in compact PCB layouts.

Technical Context

This Zener diode operates in reverse breakdown mode with a specified nominal Zener voltage of 47 V (min 44.0 V, max 50.0 V) at I_Z = 4 mA. Its temperature coefficient is +100 mV/K, indicating positive drift with junction temperature - a key factor when used in temperature-sensitive reference circuits.

The device exhibits 100 Ω typical differential resistance (r_dif) at I_Z = 4 mA, enabling stable regulation under moderate load variation. Non-repetitive peak reverse current reaches 33 A for t_p = 100 µs, supporting transient surge suppression in DC rails without requiring external clamping components.

Key Specifications

Pinout & Package

Hermetically sealed SOD66 (DO-41) axial glass package with 2 leads: cathode marked by a band; anode unmarked. Package dimensions: D = 2.6 mm (max), L = 25.4 mm (max), b = 0.81 mm (min).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Compared with 1N4753A and BZX85C47, BZV85-C47,133 delivers superior long-term stability via hermetic sealing and optimized thermal resistance (110 K/W), making it the preferred choice for industrial and automotive applications demanding consistent regulation over temperature and time.

Availability

BZV85-C47,133 is available at Aetrix Electronics and suitable for industrial power supplies, automotive sensor modules, and fieldbus communication nodes requiring stable component supply with guaranteed long-lifecycle support.

Supply support for BZV85-C47,133 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability standard logic, discrete, and MOSFET solutions, with manufacturing rooted in process control and automotive-grade quality systems.

The BZV85 series belongs to Nexperia's precision Zener diode product line, engineered specifically for stable voltage reference and shunt regulation in industrial, automotive, and communications infrastructure where hermetic reliability and tight tolerances are mandatory.

FAQ

What is the maximum continuous reverse current this diode can handle at 47 V?

The BZV85-C47,133 is not rated for continuous reverse current at full Zener voltage. Its maximum continuous forward current is 500 mA, but in Zener operation, steady-state current is limited by power dissipation: at 47 V, safe continuous current is ≤27.7 mA (1.3 W ÷ 47 V) with proper thermal management at the tie-point.

Does this Zener diode have a specified capacitance value?

Yes - at f = 1 MHz and V_R = 0 V, the diode capacitance (C_d) is 0.6 pF maximum. This ultra-low value minimizes signal coupling and phase shift in high-frequency reference or RF-bias applications, unlike higher-capacitance alternatives such as BZX85 series.

Can BZV85-C47,133 replace BZX85C47 in existing PCB layouts?

No - although both are 47 V Zeners in glass packages, BZV85-C47,133 uses SOD66 (DO-41) with lead spacing and body diameter distinct from BZX85C47's DO-35 outline. Mechanical fit, thermal pad clearance, and solder joint geometry differ; direct replacement requires layout verification and requalification.

How does the +100 mV/K temperature coefficient affect circuit performance?

The +100 mV/K coefficient means V_Z increases ~4.7 mV per °C rise in junction temperature. In a 47 V reference, this yields ~1 % drift over 20 °C ambient change. Designers must either compensate using complementary components or select it deliberately to offset negative-drift sensors in ratiometric systems.