NXP Semiconductors BZX284-B24,115

Overview

BZX284-B24,115 from NXP Semiconductors is a ±2% tolerance Zener voltage regulator diode in SOD110 ceramic SMD package, rated for 24 V nominal working voltage at 5 mA test current, 400 mW total power dissipation, and 30 Ω typical differential resistance at 5 mA. It serves as a precision low-power voltage reference in power supply feedback paths, overvoltage clamping circuits, and analog signal conditioning stages.

For engineers reviewing the BZX284-B24,115 datasheet, BZX284-B24,115 pinout, BZX284-B24,115 application, or BZX284-B24,115 equivalent, this page delivers verified electrical parameters, thermal behavior, package dimensions, reverse leakage thresholds, temperature coefficient data, and validated alternative parts for stable voltage regulation design.

Technical Context

The BZX284-B24,115 operates as a two-terminal silicon Zener diode with avalanche breakdown mechanism above 6.2 V, exhibiting a positive temperature coefficient of +20.4 mV/K at 5 mA test current. Its junction-to-ambient thermal resistance is 315 K/W when mounted on a standard 11 × 25 × 1.6 mm PCB, limiting continuous power handling under ambient conditions.

Designed for surface-mount use in space-constrained applications, it features a cathode-marked SOD110 outline with 1.9–2.1 mm length, 1.1–1.4 mm width, and 1.6 mm max height. Reverse leakage is specified at ≤50 nA when biased at 0.7 × V_Znom (16.8 V), and non-repetitive peak reverse surge current reaches 1.25 A for 100 μs pulses.

Key Specifications

Pinout & Package

SOD110 is a very small ceramic rectangular surface-mounted package with cathode identifier marked on top surface. Dimensions: 1.90–2.10 mm (L) × 1.10–1.40 mm (W) × 1.6 mm (H). Cathode terminal is electrically connected to the marked side.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Compared with BZX284-B24,115, BZT52-B24 offers higher power headroom at the cost of slightly degraded regulation stiffness, while PLZ24B provides improved thermal robustness and tighter impedance control-both require SOD123 footprint adaptation but deliver equivalent voltage reference performance in most shunt-regulation roles.

Availability

BZX284-B24,115 is available at Aetrix Electronics and suitable for power supply feedback loops, overvoltage protection clamps, analog sensor bias networks, and reference voltage generators requiring stable component supply across industrial, automotive, and instrumentation programs.

Supply support for BZX284-B24,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The BZX284 series was developed as a family of low-power, high-precision Zener diodes targeting compact, reliable voltage regulation in space-constrained SMD designs-particularly for feedback, clamping, and reference functions in consumer and industrial electronics.

FAQ

What is the nominal Zener voltage and test condition for BZX284-B24,115?

The BZX284-B24,115 has a nominal Zener voltage of 24 V measured at a test current of 5 mA. This value falls within the ±2% tolerance band (23.5 V to 24.5 V), and the device achieves stable regulation only when reverse-biased above its knee voltage with sufficient current flow. The 5 mA condition aligns with standard industry practice for specifying Zener parameters and ensures consistent comparison across the BZX284-B series.

What is the maximum power dissipation rating for BZX284-B24,115 and how does it scale with temperature?

The BZX284-B24,115 has a maximum total power dissipation of 400 mW at an ambient temperature of 25 °C. Its thermal resistance from junction to ambient is 315 K/W, meaning power must be linearly derated above 25 °C-approximately 1.27 mW/°C reduction beyond that point. At 75 °C ambient, usable power drops to ~336 mW, and operation ceases to be safe above 150 °C junction temperature, regardless of ambient conditions.

Does BZX284-B24,115 have a defined cathode marking and how is polarity identified on the SOD110 package?

Yes, the BZX284-B24,115 uses a cathode mark on the top surface of the SOD110 ceramic package-typically a visible band or dot adjacent to terminal 2. In top-view orientation, terminal 1 is the anode and terminal 2 is the cathode. This marking matches the simplified outline in Figure 1 of the NXP datasheet and is essential for correct orientation during automated placement and manual rework to avoid forward-conduction failure in Zener applications.

What is the reverse leakage current specification for BZX284-B24,115 and under what bias condition is it measured?

The reverse leakage current for BZX284-B24,115 is specified as ≤50 nA when reverse-biased at 0.7 × V_Znom = 16.8 V. This condition reflects real-world partial-conduction stress below full Zener onset and is critical for high-impedance circuits such as sensor bias networks or comparator reference inputs where even nanoamp-level leakage could induce measurable offset errors.

How does the temperature coefficient of BZX284-B24,115 affect its regulation stability across operating temperature ranges?

The BZX284-B24,115 exhibits a positive temperature coefficient of +20.4 mV/K at 5 mA test current, meaning its Zener voltage increases by approximately 20.4 mV per degree Celsius rise in junction temperature. This behavior must be factored into system-level thermal design-especially in unregulated environments-where a 50 °C junction rise adds ~1.02 V to the nominal 24 V output, potentially violating downstream voltage tolerances unless compensated via circuit topology or firmware correction.