NXP Semiconductors BZX284-B3V6,115

Overview

BZX284-B3V6,115 from NXP Semiconductors is a ±2% tolerance, 3.6 V nominal Zener voltage regulator diode in a SOD110 ceramic SMD package, rated for 400 mW total power dissipation at 25 °C ambient, with 375 Ω typical differential resistance at 5 mA test current and −2.4 mV/K temperature coefficient - used for precision low-power voltage reference and overvoltage clamping in sensor signal conditioning circuits.

For engineers reviewing the BZX284-B3V6,115 datasheet, BZX284-B3V6,115 pinout, BZX284-B3V6,115 application, or BZX284-B3V6,115 equivalent, key selection considerations include its 3.53–3.67 V working voltage range at 5 mA, 5 μA reverse leakage at 1 V reverse bias, 315 K/W junction-to-ambient thermal resistance, and compatibility with automated SMD assembly on standard PCBs.

Technical Context

This device operates as a two-terminal silicon Zener diode optimized for stable voltage regulation under reverse-biased conditions. It exhibits a sharp breakdown knee at 3.6 V with 375 Ω typical dynamic impedance at 5 mA, enabling accurate voltage referencing in low-current analog subsystems.

The BZX284-B3V6,115 leverages NXP's planar epitaxial process for tight ±2% voltage tolerance and predictable temperature coefficient (−2.4 mV/K), making it suitable for applications requiring minimal drift across −65 to +150 °C storage and up to +150 °C junction operation.

Key Specifications

Pinout & Package

Two-terminal device in SOD110 ultra-small ceramic surface-mount package (1.90 × 1.40 × 1.60 mm), with cathode marked by band on top surface. Terminals are non-polarized for mounting orientation but require correct anode/cathode placement relative to circuit polarity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar voltage reference applications.

Compared with BZX284-B3V6,115, the BZT52-B3V6 offers higher power headroom but requires more PCB area, while the BZX84-C3V6 reduces size and cost at the expense of voltage accuracy and leakage performance - making BZX284-B3V6,115 optimal for space-constrained industrial references demanding ±2% stability.

Availability

BZX284-B3V6,115 is available at Aetrix Electronics and suitable for industrial sensor interfaces, medical wearable power monitoring, and automotive cabin control systems requiring stable component supply with guaranteed long-term availability.

Supply support for BZX284-B3V6,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in high-reliability analog, interface, and power management solutions for industrial, automotive, and communication markets.

The BZX284 series was designed for precision low-power voltage regulation in space-constrained SMD applications, emphasizing ceramic package stability, tight tolerance control, and predictable thermal behavior across extended temperature ranges.

FAQ

What is the maximum continuous reverse current the BZX284-B3V6,115 can handle without degradation?

The BZX284-B3V6,115 supports a maximum continuous forward current of 250 mA, but as a Zener diode, its reverse operation is defined by power dissipation limits. At 25 °C ambient, it may dissipate up to 400 mW continuously - corresponding to ~111 mA at 3.6 V - provided thermal resistance (315 K/W) is managed via adequate PCB copper area. Exceeding this causes junction temperature rise beyond 150 °C, risking parametric shift.

Does the BZX284-B3V6,115 have a specified capacitance value relevant for high-frequency filtering?

Yes, the BZX284-B3V6,115 has a typical diode capacitance (C_d) of 390 pF measured at 1 MHz and 0 V reverse bias. This value impacts high-frequency noise rejection and transient response in clamping applications - for example, limiting slew rate of fast transients on sensor lines. It is not intended for RF filtering but remains stable across its operating voltage range.

How does the temperature coefficient of −2.4 mV/K affect voltage regulation accuracy over temperature in the BZX284-B3V6,115?

The BZX284-B3V6,115 exhibits a linear voltage drift of −2.4 mV per Kelvin increase in junction temperature. Over a −40 to +125 °C operating range (165 K span), this results in ~−396 mV total drift - approximately −11% of nominal 3.6 V. System-level compensation or use within narrower ambient bands (e.g., 0–70 °C) mitigates this; the coefficient is well-characterized and repeatable for predictive modeling.

Can the BZX284-B3V6,115 be used in place of a 3.3 V Zener diode for undervoltage lockout (UVLO) circuits?

No - the BZX284-B3V6,115 is specified at 3.6 V nominal (3.53–3.67 V range), not 3.3 V. Substituting it into a 3.3 V UVLO threshold circuit would raise the trip point by ~300 mV, potentially causing premature shutdown or failure to assert lockout. For 3.3 V applications, BZX284-B3V3 (3.23–3.37 V) is the correct variant in the same series and package.

Is the SOD110 package of the BZX284-B3V6,115 compatible with standard reflow soldering profiles?

Yes, the SOD110 ceramic package of the BZX284-B3V6,115 is qualified for lead-free reflow soldering per JEDEC J-STD-020. Its 1.6 mm height and ceramic construction withstand peak temperatures up to 260 °C for ≤60 seconds. Standard IPC-A-610 Class 2/3 profiles apply; no special preheat or cooling ramp rates are required beyond typical SnAgCu process guidelines.