NXP Semiconductors BZX284-B6V2,115

Overview

BZX284-B6V2,115 from NXP Semiconductors is a ±2% tolerance Zener voltage regulator diode in a SOD110 ceramic SMD package, rated for 400 mW total power dissipation, with nominal Zener voltage 6.2 V at 5 mA test current, differential resistance ≤150 Ω, and temperature coefficient +2.3 mV/K - used for precision low-power voltage reference and overvoltage protection in sensor signal conditioning circuits.

For engineers reviewing the BZX284-B6V2,115 datasheet, BZX284-B6V2,115 pinout, BZX284-B6V2,115 application, or BZX284-B6V2,115 equivalent, key selection criteria include Zener voltage tolerance (±2%), low dynamic impedance (40–150 Ω), tight thermal coefficient (+2.3 mV/K), reverse leakage ≤3 μA at 4 V, and SOD110 footprint compatibility with space-constrained PCB layouts.

Technical Context

The BZX284-B6V2,115 operates as a two-terminal shunt voltage reference, maintaining stable output voltage across varying load currents via controlled reverse breakdown. Its Zener mechanism delivers predictable regulation at 6.2 V with minimal voltage drift over temperature due to its positive +2.3 mV/K coefficient - optimized for biasing, clamping, and reference generation in analog front-ends.

Designed for surface-mount assembly on standard FR-4 PCBs (11 × 25 × 1.6 mm), it exhibits thermal resistance of 315 K/W junction-to-ambient and supports continuous forward current up to 250 mA. Reverse leakage is specified at 3 μA under 4 V reverse bias, ensuring low quiescent power loss in standby regulation paths.

Key Specifications

Pinout & Package

SOD110 is a 2-terminal ceramic surface-mount package with cathode marked by a band on one end. Terminals are non-polarized in layout but functionally asymmetric: anode (A) and cathode (K) define unidirectional conduction path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Compared with MMBZ5234B-7-F and BZX84-C6V2, the BZX284-B6V2,115 offers tighter ±2% tolerance, ceramic SOD110 packaging for enhanced moisture resistance, and optimized 5 mA test current matching typical sensor-biasing loads - making it preferred for industrial-grade analog signal chains requiring long-term stability.

Availability

BZX284-B6V2,115 is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, USB port overvoltage protection, and low-power IoT node voltage reference requiring stable component supply across multi-year production cycles.

Supply support for BZX284-B6V2,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The BZX284 series was developed as a family of precision, low-power Zener diodes targeting high-reliability analog reference and protection functions in space-constrained, thermally demanding applications.

FAQ

What is the Zener voltage tolerance of the BZX284-B6V2,115?

The BZX284-B6V2,115 has a guaranteed ±2% Zener voltage tolerance, meaning its nominal 6.2 V breakdown voltage falls within 6.08 V to 6.32 V at 5 mA test current. This tight tolerance is confirmed in Table 1 of the NXP datasheet and distinguishes it from the ±5% BZX284-C variants. The BZX284-B6V2,115 is therefore suited for applications requiring higher initial accuracy without trimming.

What is the maximum reverse leakage current for BZX284-B6V2,115 at 4 V?

The BZX284-B6V2,115 exhibits a maximum reverse leakage current of 3 μA when biased at 4 V, as specified in the Electrical Characteristics table under "IR" for BZX284-B/C6V2. This low leakage supports energy-efficient operation in always-on sensor nodes and battery-backed systems. The BZX284-B6V2,115 maintains this specification across its full operating temperature range.

Does the BZX284-B6V2,115 have a positive or negative temperature coefficient?

The BZX284-B6V2,115 has a positive temperature coefficient of +2.3 mV/K at 5 mA test current, as documented in Table 1 and illustrated in Figure 4 of the NXP datasheet. This characteristic allows it to compensate for negative TC elements in mixed-signal circuits. Unlike lower-voltage Zeners in the same series, the BZX284-B6V2,115's positive TC improves overall system thermal stability.

What package type does the BZX284-B6V2,115 use, and what are its dimensions?

The BZX284-B6V2,115 uses the SOD110 ceramic surface-mount package, defined in the Package Outline section with maximum dimensions of 2.10 mm × 1.40 mm × 1.60 mm. Its cathode is marked by a band on the top surface. The SOD110 package provides hermetic sealing and superior moisture resistance compared to plastic alternatives like SOT-23. The BZX284-B6V2,115's small footprint supports high-density PCB layouts in portable and automotive electronics.

What is the thermal resistance from junction to ambient for BZX284-B6V2,115?

The thermal resistance from junction to ambient (R_{th j-a}) for the BZX284-B6V2,115 is 315 K/W when mounted on a standard 11 × 25 × 1.6 mm FR-4 PCB, per the Thermal Characteristics table. This value reflects its ceramic construction and small die size. Engineers must apply appropriate derating above 25 °C ambient to stay within the 400 mW power limit. The BZX284-B6V2,115's R_{th j-a} enables reliable operation in thermally constrained enclosures without forced cooling.